Related papers: Anisotropic magnetoresistance driven by surface sp…
Unexpected transport behavior can arise due to anisotropic single-particle scattering in multiband systems. Specifically, we show within a semiclassical Boltzmann approach beyond the relaxation-time approximation that anisotropic scattering…
The crystalline structure, anisotropic magnetoresistance (AMR), and magnetization of La0.7Sr0.3MnO3/SrTiO3 (LSMO/STO) superlattices grown by an rf sputtering system are systematically analyzed to study the spin polarization of manganite at…
By studying coupled ferro- (FM) and antiferromagnetic (AFM) thin film systems, we obtain an in-plane magnetic reorientation as a function of temperature and FM film thickness. The interlayer exchange coupling causes a uniaxial anisotropy,…
We study the surface conductivity of a three dimensional topological insulator doped with magnetic impurities. The spin-momentum locking of surface electrons makes their scattering from magnetic impurities anisotropic and the standard…
Spin Hall magnetoresistance (SMR) is studied in metallic bilayers that consist of heavy metal (HM) layer and a ferromagnetic metal (FM) layer. We find nearly a ten-fold increase of SMR in W/CoFeB compared to previously studied…
Antiferromagnetic spintronics actively introduces new principles of magnetic memory, in which the most fundamental spin-dependent phenomena, i.e. anisotropic magnetoresistance effects, are governed by an antiferromagnet instead of a…
We consider the influence of a spin accumulation in a normal metal on the magnetic statics and dynamics in an adjacent magnetic insulator. In particular, we focus on arbitary angles between the spin accumulation and the easy-axis of the…
Antiferromagnetic spintronics is an emerging field; antiferromagnets can improve the functionalities of ferromagnets with higher response times, and having the information shielded against external magnetic field. Moreover, a large list of…
The effects of the spin-orbit interaction on the tunneling magnetoresistance of magnetic tunnel junctions are investigated. A model in which the experimentally observed two-fold symmetry of the anisotropic tunneling magnetoresistance (TAMR)…
This paper presents the boundary conditions needed for drift-diffusion models to treat interfaces with spin-orbit coupling. Using these boundary conditions for heavy metal/ferromagnet bilayers, solutions of the drift-diffusion equations…
The spin Hall magnetoresistance (SMR) allows to investigate the magnetic textures of magnetically ordered insulators in heterostructures with normal metals by magnetotransport experiments. We here report the observation of the SMR in…
We studied electrical transport in magnetic semiconductors, which is determined by scattering of free carriers off localized magnetic moments. We calculated the scattering time and the mobility of the majority and minority-spin carriers…
The impact of carrier localization on the anisotropic magnetoresistance (AMR) has been investigated in NSSMO thin films. Carrier localization is caused by the reduced average radius of the A-site of the perovskite lattice and enhanced size…
Recent experiments in ferromagnetic atomic-sized contacts have shown that the anisotropic magnetoresistance (AMR) is greatly enhanced and has an asymmetric angular dependence as compared with that of bulk samples. The origin of these…
We study the transport properties of vortex matter in a superconducting thin film separated by a thin insulator layer from a ferromagnetic layer. We assume an alternating stripe structure for both FM and SC layers as found in [7]. We…
In bilayers consisting of a normal metal (N) with spin-orbit coupling and a ferromagnet (F), the combination of the spin-Hall effect, the spin-transfer torque, and the inverse spin-Hall effect gives a small correction to the in-plane…
The tunnelling anisotropic magnetoresistance (TAMR) effect describes the sensitivity of spin-polarized electron transport to the orientation of the magnetization with respect to the crystallographic axes. As the TAMR effect requires only a…
Our experimental and theoretical study of the non-crystalline and crystalline components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As is aimed at exploring the basic physical aspects of this relativistic transport effect. The…
Many of the most interesting and technologically important electronic materials discovered in the past two decades have two common features: a layered crystal structure and strong interactions between electrons. Two of the most fundamental…
We predict unidirectional magnetoresistance effects arising in a bilayer composed of a nonmagnetic metal and a ferromagnetic insulator, whereby both longitudinal and transverse resistances vary when the direction of the applied electric…