Related papers: Efficient Dual Spin-Valley Filter In Strained Sili…
Spin selective nature of spin-filter tunnel junctions can be integrated with conventional metallic ferromagnets to regulate spin polarized quasiparticles in superconducting devices. We report fabrication of pseudo spin-valve device made…
We analyze magnetic phases of monolayers of transition metal dichalcogenides that are two-valley materials with electron-electron interactions. The exchange inter-valley scattering makes two-valley systems less stable to the spin…
We show that the $e$-$e$ interaction induces a strong breakdown of valley symmetry for each spin channel in twisted trilayer graphene, leading to a ground state where the two spin projections have opposite sign of the valley symmetry…
Spin field-effect transistors (SFETs) are promising candidates for low-power spin-based electronics, yet existing realizations that rely on spin-orbit coupling are constrained by limited material choices and short spin-coherence lengths.…
We propose a new type of spin-valley locking (SVL), named $\textit{C}$-paired SVL, in antiferromagnetic systems, which directly connects the spin/valley space with the real space, and hence enables both static and dynamical controls of spin…
Spintronics, a technology harnessing electron spin for information transmission, offers a promising avenue to surpass the limitations of conventional electronic devices. While the spin directly interacts with the magnetic field, its control…
We report a real-time first-principles study of ultrafast spin injection in a WSe$_2$-graphene heterobilayer under circularly polarized laser irradiation, using time-dependent density functional theory. Contrary to conventional…
Valley-polarized currents can be generated by local straining of multi-terminal graphene devices. The pseudo-magnetic field created by the deformation allows electrons from only one valley to transmit and a current of electrons from a…
Spatially varying strained graphene can acquire interesting electronic properties because of the strain-induced valley-dependent gauge (pseudomagnetic) fields1,2. Here we report the realization of strained graphene regions located close to…
A two-dimensional electron system placed in a magnetic field develops Landau levels, where strong Coulomb interactions lead to the appearance of many-body correlated ground states. Quantum numbers similar to the electron spin enable the…
Superconductor-ferromagnet tunnel junctions demonstrate giant thermoelectric effects which are being exploited to engineer ultra-sensitive terahertz radiation detectors. Here, we experimentally observe the recently predicted complete…
Manipulating the circular polarization of light is of great importance in chemistry and biology, as chiral molecules exhibit different physiological properties when exposed to different circularly polarized waves. Here we suggest a…
Graphene - a single atomic layer of graphite - is a recently-found two-dimensional form of carbon, which exhibits high crystal quality and ballistic electron transport at room temperature. Soft magnetic NiFe electrodes have been used to…
Graphene-based materials show promise for spintronic applications due to their potentially large spin coherence length. On the other hand, because of their small intrinsic spin-orbit interaction, an external magnetic source is desirable in…
We have studied the spin-splitting effect in a four-terminal two-dimensional (2D) electron gas system with two potential barriers generated by two surface metal gates and an external perpendicular magnetic field. The calculations show that…
We propose a graphene device that can generate spin-dependent negative differential resistance (NDR). The device is composed of a sufficiently wide and short graphene and two gated EuO strips deposited on top of it. This scheme avoids…
We report a successful measurement of the magnetic field-induced spin singlet-triplet transition in silicon-based coupled dot systems. Our specific experimental scheme incorporates a lateral gate-controlled Coulomb-blockaded structure in Si…
Developing alternative paradigms of electronics beyond silicon technology requires the exploration of fundamentally new physical mechanisms, such as the valley specific phenomena in hexagonal two-dimensional materials. We realize ballistic…
We present an experimental study of two-dimensional superconducting quantum interference filters (2D-SQIFs) in the presence of a magnetic field B. The dependences of the dc voltage on the applied magnetic field are characterized by a unique…
We investigate charge conductance and spin and valley polarization along with the tunnelling magneto-resistance (TMR) in silicene junctions composed of normal silicene and ferromagnetic silicene. We show distinct features of the…