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Zinc tin nitride (ZnSnN2) is attracting growing interest as a non-toxic and earth-abundant photoabsorber for thin-film photovoltaics. Carrier transport in ZnSnN2 and consequently cell performance are strongly affected by point defects with…
ZnSnN2 has recently garnered increasing interest as a potential solar absorber material due to its direct bandgap that is predicted to be tunable from 1.0-2.1 eV based on cation disorder. One important challenge to the further development…
Zinc-based nitride CaZn2N2 films grown by molecular beam epitaxy (MBE) with a plasma-assisted active nitrogen-radical source are promising candidates of next-generation semiconductors for light-emitting diodes and solar cells. This nitride…
Magnetic semiconductors may soon improve the energy efficiency of computers, but materials exhibiting these dual properties remain underexplored. Here, we report the computational prediction and realization of a new magnetic and…
Orthorhombic II-IV nitride semiconductors offer an expanded and more tunable material set with unique properties, while maintaining close compatibility with the wurtzite crystal structure of the III-nitrides. In particular, MgSiN2, a II-IV…
The development of tandem photovoltaics and photoelectrochemical solar cells requires new absorber materials with band gaps in the range of ~1.5-2.3 eV, for use in the top cell paired with a narrower-gap bottom cell. An outstanding…
To contemplate an alternative approach for the minimization of diffusion at high temperature depositions, present findings impart viability of room-temperature deposited reactively sputtered ScN thin film samples. The adopted room…
Zinc nitride films were synthesized by reactive radio frequency (rf) magnetron sputtering of a zinc target using an Ar+N2 mixture. The as-deposited films were annealed in the air and O2 at 300 {\deg}C for 1 hr. The XRD measurements…
To enable lightweight and flexible solar cell applications it is imperative to develop direct bandgap absorber materials. Moreover, to enhance the potential sustainability impact of the technologies there is a drive to base the devices on…
Undoped and Si-doped GaN films were grown epitaxially on sapphire by reactive rf sputtering of GaAs (and Si) in Ar-N2 mixture. The resistivity of undoped GaN film grown at 100% N2 was ~2 x 105 {\Omega} cm, which reduced to ~1 {\Omega} cm in…
Group II-IV nitrides have recently emerged as a novel class of semiconductors composed of earth-abundant elements. Owing to their tunable bandgaps, comparable to those of III-nitrides, these materials are attractive candidates for replacing…
RF sputtered ZnO and Al:ZnO films are attractive transparent conductive oxides for fabrication of opto-electronic devices. In this paper we present efforts to control carrier concentration and mobility of ZnO/Al:ZnO thin films by…
Tin monosulfide (SnS) usually exhibits p-type conduction due to the low formation enthalpy of acceptor-type defects, and as a result n-type SnS thin films have never been obtained. This study realizes n-type conduction in SnS thin films for…
Metastable cubic tin(II) sulfide ($\pi$-SnS) is an earth-abundant semiconductor whose three-dimensionally bonded chiral lattice may overcome the short minority-carrier lifetime of orthorhombic SnS while maintaining a near-ideal bandgap for…
We investigate the electronic structure and defect properties of Sn- and Ge- doped ZnTe by first-principles calculations within the DFT+$GW$ formalism. We find that $(\text{Sn}_\text{Zn})$ and $(\text{Ge}_\text{Zn})$ introduce isolated…
Orthorhombic-structured II-IV nitrides provide a promising opportunity to expand the material platform while maintaining compatibility with the wurtzite crystal structure of the traditional III-nitride material system. Among them,…
Sulfide chalcopyrite, Cu(In,Ga)S2, having wide bandgap (larger than 1.5 eV), favorable optoelectronic properties, and high stability, is a promising top-cell absorber for tandem applications. Adapting device structures optimized for 1.0 -…
Making a systematic effort, we have developed a single-crystalline ZnSnN2 on ZnO (0001) by reactive magnetron co-sputtering. Epitaxial growth was achieved at 350 C by co-sputtering from metal targets in nitrogen atmosphere, and confirmed by…
Growing energy storage demands on lithium-ion batteries necessitate exploration of new electrochemical materials as next-generation battery electrode materials. In this work, we investigate the previously unexplored electrochemical…
We study the anisotropic electronic properties of 2D SnS, an analogue of phosphorene, grown by physical vapor transport. With transmission electron microscope and polarized Raman spectroscopy, we identify the zigzag and armchair directions…