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We report the fabrication of hexagonal-boron-nitride (hBN) encapsulated multi-terminal WSe$_2$ Hall bars with 2D/2D low-temperature Ohmic contacts as a platform for investigating the two-dimensional (2D) metal-insulator transition. We…

Mesoscale and Nanoscale Physics · Physics 2021-10-25 L. J. Stanley , Hsun-Jen Chuang , Zhixian Zhou , M. Koehler , J. Yan , D. Mandrus , Dragana Popović

Portable and cost-effective gas sensors are gaining demand for a number of environmental, biomedical and industrial applications, yet current devices are confined into specialized labs and cannot be extended to general use. Here, we…

Instrumentation and Detectors · Physics 2020-04-10 Giuseppe Antonacci , Jeroen Goyvaerts , Haolan Zhao , Bettina Baumgartner , Bernhard Lendl , Roel Baets

We present electronic transport measurements through short and narrow (30x30 nm) single layer graphene constrictions on a hexagonal boron nitride substrate. While the general observation of Coulomb-blockade is compatible with earlier work,…

Mesoscale and Nanoscale Physics · Physics 2015-01-30 Dominik Bischoff , Florian Libisch , Joachim Burgdörfer , Thomas Ihn , Klaus Ensslin

Isolated, atomically thin conducting membranes of graphite, called graphene, have recently been the subject of intense research with the hope that practical applications in fields ranging from electronics to energy science will emerge.…

Mesoscale and Nanoscale Physics · Physics 2010-09-17 S. Garaj , W. Hubbard , A. Reina , J. Kong , D. Branton , J. A. Golovchenko

Electron-electron interactions in graphene are sufficiently strong to induce a correlated and momentum-conserving flow such that charge carriers behave similarly to the Hagen-Poiseuille flow of a classical fluid. In the current work, we…

Mesoscale and Nanoscale Physics · Physics 2022-11-02 Wenhao Huang , Tathagata Paul , Kenji Watanabe , Takashi Taniguchi , Mickael L. Perrin , Michel Calame

We report fabrication of graphene devices in a Corbino geometry consisting of concentric circular electrodes with no physical edge connecting the inner and outer electrodes. High device mobility is realized using boron nitride encapsulation…

Mesoscale and Nanoscale Physics · Physics 2019-04-10 Y. Zeng , J. I. A. Li , S. A. Dietrich , O. M. Ghosh , K. Watanabe , T. Taniguchi , J. Hone , C. R. Dean

Over the past decade, graphene has emerged as a promising candidate for exploring the viscous nature of electronic flow facilitated by the availability of extremely high-quality devices employing a graphene channel encapsulated within…

Mesoscale and Nanoscale Physics · Physics 2025-11-20 Akash Gugnani , Aniket Majumdar , Kenji Watanabe , Takashi Taniguchi , Arindam Ghosh

Van der Waals encapsulation of two-dimensional materials within hexagonal boron nitride (h-BN) stacks has proven to be a promising way to create ultrahigh-performance electronic devices. However, contemporary approaches for achieving van…

Vertical integration of two-dimensional materials has recently emerged as an exciting method for the design of novel electronic and optoelectronic devices. Using density functional theory, we investigatethe structural and electronic…

Materials Science · Physics 2015-06-25 Yongqing Cai , Gang Zhang , Yong-Wei Zhang

Nanoscale engineered materials combined with wearable wireless technologies can deliver a new level of health monitoring. A reduced graphene oxide-nylon composite material is developed and tested, demonstrating its usefulness as a material…

Two-dimensional graphene exhibits many fascinating properties such as ballistic electronic conduction and quantum Hall effect at room temperature.1-4 Graphene doped electrochemically or through charge-transfer with electron-donor and…

We examine the effect of a hexagonal boron nitride (hBN) substrate on electron transport through graphene nanojunctions just before gap formation. Junctions in vacuum and on hBN are formed using classical molecular dynamics to create…

Mesoscale and Nanoscale Physics · Physics 2016-06-29 Hatef Sadeghi , Sara Sangtarash , Colin Lambert

We report on the fabrication and characterization of field effect transistors (FETs) based on chemical vapor deposited (CVD) graphene encapsulated between few layer CVD boron nitride (BN) sheets with complementary metal oxide semiconductor…

We have measured the temperature and magnetic field dependence of the Hall coefficient ($R_{\rm H}$) in three, several micrometer long multigraphene samples of thickness between $\sim 9~$to $\sim 30$~nm in the temperature range 0.1 to 200~K…

Superconductivity · Physics 2014-11-07 P. Esquinazi , J. Krüger , J. Barzola-Quiquia , R. Schönemann , T. Herrmannsdörfer , N. García

The electronic and transport properties of graphene modulated by magnetic barrier arrays are derived for finite temperature. Prominent conductance gaps, originating from quantum interference effects are found in the periodic array case.…

Mesoscale and Nanoscale Physics · Physics 2015-04-30 Nojoon Myoung , Elefterios Lidorikis

Semiconductor InSb nanosheet/hexagonal boron nitride (hBN)/graphite trilayers are fabricated, and single- and double-gate devices made from the trilayers are realized and characterized. The InSb nanosheets employed in the trilayer devices…

Mesoscale and Nanoscale Physics · Physics 2022-08-22 Li Zhang , Yuanjie Chen , Dong Pan , Shaoyun Huang , Jianhua Zhao , H. Q. Xu

We demonstrate a new design of graphene liquid cell consisting of a thin lithographically patterned hexagonal boron nitride crystal encapsulated from both sides with graphene windows. The ultra-thin window liquid cells produced have…

We theoretically demonstrate a high-sensitivity, graphene-plasmon based refractive index sensor working in the mid-infrared at room temperature. The bulk figure of merit of our sensor reaches values above $10$, but the key aspect of our…

Mesoscale and Nanoscale Physics · Physics 2017-05-31 Tobias Wenger , Giovanni Viola , Jari Kinaret , Mikael Fogelström , Philippe Tassin

Graphene-hexagonal boron nitride (hBN) scalable heterostructures are pivotal for the development of graphene-based high-tech applications. In this work, we demonstrate the realization of high-quality graphene-hBN heterostructures entirely…

The magnetic sensitivity of Hall-effect sensors made of InAlN/GaN and AlGaN/GaN heterostructures was measured between room temperature and 576{\deg}C. Both devices showed decreasing voltage-scaled magnetic sensitivity at high temperature,…

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