Related papers: Gate-tunable Memristive Phenonmena Mediated by Gra…
Progress in (Ga,Mn)As lithography has recently allowed us to realize structures where unique magnetic anisotropy properties can be imposed locally in various regions of a given device. We make use of this technology to fabricate a device in…
This paper describes a new memristor crossbar architecture that is proposed for use in a high density cache design. This design has less than 10% of the write energy consumption than a simple memristor crossbar. Also, it has up to 4 times…
In this work, the magneto-resistance (MR) of ultra-thin WTe2/BN heterostructures far away from electron-hole equilibrium is measured. The change of MR of such devices is found to be determined largely by a single tunable parameter, i.e. the…
Memristors have demonstrated immense potential as building blocks in future adaptive neuromorphic architectures. Recently, there has been focus on emulating specific synaptic functions of the mammalian nervous system by either tailoring the…
The advent of advanced neuronal interfaces offers great promise for linking brain functions to electronics. A major bottleneck in achieving this is real-time processing of big data that imposes excessive requirements on bandwidth, energy…
Brain-inspired non-Boolean computing offers intrinsic error tolerance and parallelism, but its practical deployment is limited by the lack of compact, energy-efficient spiking hardware compatible with large-scale integration. Mott…
Lithium-intercalated layered transition-metal oxides, LixTMO2, brought about a paradigm change in rechargeable batteries in recent decades and show promise for use in memristors, a type of device for future neural computing and on-chip…
Memristive devices are promising elements for energy-efficient neuromorphic computing and future artificial intelligence systems. For diffusive memristors, the device state switching occurs because of the sequential formation and…
The development prospects of memristive elements for non-volatile memory with use of the metal-dielectric-metal sandwich structures with a thin oxide layer are due to the possibility of reliable forming the sustained functional states with…
The electrical properties and performance characteristics of niobium dioxide (NbO$_\mathrm{2}$)-based memristive devices are examined at cryogenic temperatures. Sub-stoichiometric Nb$_\mathrm{2}$O$_\mathrm{5}$ was deposited via magnetron…
Molecular transistors have the potential for switching with lower gate voltages than conventional field-effect transistors. We have calculated the performance of a single-molecule device in which there is interference between electron…
Implication logic gates that are based on volatile memristors are demonstrated experimentally with the use of relay-based volatile memristor emulators of an original design. The fabricated logic circuit involves two volatile memristors and…
Memristors are passive elements that allow us to store information using a single element per bit. However, this is not the only utility of the memristor. Considering the physical chemical structure of the element used, the memristor can…
Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties for advanced electronics and optoelectronics. In the present…
Memristors offer significant advantages as in-memory computing devices due to their non-volatility, low power consumption, and history-dependent conductivity. These attributes are particularly valuable in the realm of neuromorphic circuits…
One of the enduring challenges in graphene research and applications is the extreme sensitivity of its charge carriers to external perturbations, especially those introduced by the substrate. The best available substrates to date, graphite…
Memristors can mimic the functions of biological synapse, where it can simultaneously store the synaptic weight and modulate the transmitted signal. Here, we report Nb/Nb2O5/Pt based memristors with bipolar resistive switching, exhibiting…
We report, for CVD-grown monolayer MoS2, the very first results on temporal degradation of material and device performance under electrical stress. Both low and high field regimes of operation are explored at different temperatures, gate…
Resistive random-access memories, also known as memristors, whose resistance can be modulated by the electrically driven formation and disruption of conductive filaments within an insulator, are promising candidates for neuromorphic…
Strain engineering has played a key role in modern silicon electronics, having been introduced as a mobility booster in the 1990s and commercialized in the early 2000s. Achieving similar advances with two-dimensional (2D) semiconductors in…