Related papers: Spin splitting in 2D monochalcogenide semiconducto…
The group-IV monochalcogenides SnS, GeS, SnSe and GeSe form a family within the wider group of semiconductor `phosphorene analogues'. Here, we used first principles calculations to investigate systematically their structural, electronic and…
Using first-principles calculations within density functional theory, we investigate the intrinsic spin Hall effect in monolayers of group-VI transition-metal dichalcogenides MX2 (M = Mo, W and X = S, Se). MX2 monolayers are direct band-gap…
The unique combination of outstanding optical quality and attractive spin properties opens new avenues for optical spin control in hybrid organic-inorganic perovskite semiconductors. Using the optically detected magnetic resonance…
Strained graphene with lattice deformations has been demonstrated to give rise to large pseudomagnetic fields and host many exotic properties. Here, we propose a non-magnetic approach to realize a momentum-dependent out-of-plane spin…
Transition metal dichalcogenides provide a platform for exploring spin-valley physics, offering a promising approach to electric-field-driven spin control for low-power spintronic and quantum devices. Here, we demonstrate…
We carried out AC magnetic susceptibility measurements and muon spin relaxation spectroscopy on the cubic double perovskite Ba2YMoO6, down to 50 mK. Below ~1 K the muon relaxation is typical of a magnetic insulator with a spin-liquid type…
Spin splittings in III-V materials and heterostructures are of interest because of potential applications, mainly in spintronic devices. A necessary condition for the existence of these spin splittings is the absence of inversion symmetry.…
The spin-ladder compounds of the BaFe2X3 (X = chalcogen) family may be viewed as dimensional reductions (along stripe-like motifs) of the two-dimensional iron-based pnictide planes extensively studied since 2006. Remarkably, despite their…
We present an in-depth study of the spin-orbit (SO) interactions occurring in inversion-asymmetric two-dimensional hole gases at semiconductor heterointerfaces. We focus on common semiconductors such as GaAs, InAs, InSb, Ge, and Si. We…
The unique zero energy Landau Level of graphene has a particle-hole symmetry in the bulk, which is lifted at the boundary leading to a splitting into two chiral edge modes. It has long been theoretically predicted that the splitting of the…
A self-consistent electronic structure calculation based on the Luttinger-Kohn model is performed on GaMnAs/GaAs multilayers. The Diluted Magnetic Semiconductor layers are assumed to be metallic and ferromagnetic. The high Mn concentration…
We predict enormous piezoelectric effects in intrinsic monolayer group IV monochalcogenides (MX, M=Sn or Ge, X=Se or S), including SnSe, SnS, GeSe and GeS. Using first-principle simulations based on the modern theory of polarization, we…
The new two-dimensional materials, MoSi$_2$N$_4$ and WSi$_2$N$_4$ are experimentally synthesized successfully and various similar structures are predicted theoretically. Here, we report the electronic properties with a special focus on the…
We present a numerical study of spin relaxation in a semiclassical electron ensemble in a large ballistic quantum dot. The dot is defined in a GaAs/AlGaAs heterojunction system with a two-dimensional electron gas, and relaxation occurs due…
We study the vortex-lattice formation in a rotating {Rashba} spin-orbit (SO) coupled quasi-two-dimensional (quasi-2D) hyper-fine spin-1 spinor Bose-Einstein condensate (BEC) in the $x-y$ plane using a numerical solution of the underlying…
Spin-wave excitation plays important roles in the investigation of the magnetic phases. In this paper, we study the spin-wave excitation spectra of two-component Bose gases with spin-orbit coupling on a deep square optical lattice using…
We study the phase diagram of a one-dimensional spin quantum breakdown model, which has an exponential $U(1)$ symmetry with charge unit decaying as $2^{-j}$ with site position $j$. By exact diagonalization (ED), we show that the model with…
Electronic structure calculations for layered zincblende semiconductors are described within a restricted basis formalism which naturally and non-perturbatively accomodates both crystalline inversion asymmetry and cubic anisotropy. These…
Proximity coupling of bilayer graphene (BLG) to transition metal dichalcogenides (TMDs) offers a promising route to engineer gate-tunable spin-orbit coupling (SOC) while preserving BLG's exceptional electronic properties. This tunability…
By means the envelope function approximation, 8-band Kane model and a finite-difference scheme with the coordinate space discretization, we numerically performed calculations of the spin-orbit coupling parameters for 2D electron gas…