Related papers: Control of current-induced spin-orbit effects in a…
Inefficient screening of electric fields in nanoconductors makes electric manipulation of electronic transport in nanodevices possible. Accordingly, electrostatic (charge) gating is routinely used to affect and control the Coulomb…
We study the effects of electrostatic gating on the magnetization auto-oscillations induced by the local injection of electric current into a ferromagnet/heavy metal bilayer. We find that the characteristic currents required for the…
We demonstrate that superconducting aluminium nano-bridges can be driven into a state with complete suppression of the critical supercurrent via electrostatic gating. Probing both in- and out-of-plane magnetic field responses in the…
Magnetic electric effects in ferromagnetic metals are discussed from the viewpoint of effective spin electromagnetic field that couples to conduction electron spin. The effective field in the adiabatic limit is the spin Berry's phase in…
Electrostatic gating provides a way to obtain key functionalities in modern electronic devices and to qualitatively alter materials properties. While electrostatic description of such gating gives guidance for related doping effects,…
Electrical current manipulation of magnetization switching through spin-orbital coupling in ferromagnetic semiconductor (Ga,Mn)As Hall bar devices has been investigated. The efficiency of the current-controlled magnetization switching is…
It has been shown that the spin Hall effect from heavy transition metals can generate sufficient spin-orbit torque and further produce current-induced magnetization switching in the adjacent ferromagnetic layer. However, if the…
We analyze the contribution of the inhomogeneous magnetic field induced by an electrical current to the spin Hall effect in metals. The Zeeman coupling between the field and the electron spin leads to a spin dependent force, and to spin…
Spin currents can be obtained through adiabatic pumping by means of electrical gating only. This is possible by making use of the tunability of the Rashba spin-orbit coupling in semiconductor heterostructures. We demonstrate the principles…
Anomalous and spin Hall effects are investigated theoretically for a magnetic tunnel junction where the applied voltage produces a Rashba spin-or bit coupling within the tunneling barrier layer. The ferromagnetic electrodes are the source…
We study the role of spin-orbit interactions in the coupled magnetoelectric dynamics of a ferromagnetic film coated with an electrical conductor. While the main thrust of this work is phenomenological, several popular simple models are…
All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy…
Spin-orbit coupling in inversion-asymmetric magnetic crystals and structures has emerged as a powerful tool to generate complex magnetic textures, interconvert charge and spin under applied current, and control magnetization dynamics.…
The control of the magnetism of ultra-thin ferromagnetic layers using an electric field rather than a current, if large enough, would lead to many technologically important applications. To date, while it is usually assumed the changes in…
We study the spin transport theoretically in heterostructures consisting of a ferromagnetic metallic thin film sandwiched between heavy-metal and oxide layers. The spin current in the heavy metal layer is generated via the spin Hall effect,…
Current induced spin-orbit magnetic fields (iSOFs), arising either in single-crystalline ferromagnets with broken inversion symmetry1,2 or in non-magnetic metal/ferromagnetic metal bilayers3,4, can produce spin-orbit torques which act on a…
We predict the giant ferroelectric control of interfacial properties of Ni/HfO2, namely, (i) the magnetocrystalline anisotropy and (ii) the inverse spin and orbital Rashba effects. The reversible control of magnetic properties using…
Spin-orbit coupling in semiconductors relates the spin of an electron to its momentum and provides a pathway for electrically initializing and manipulating electron spins for applications in spintronics and spin-based quantum information…
Spin Hall effects interconvert spin- and charge currents due to spin-orbit interaction, which enables convenient electrical generation and detection of diffusive spin currents and even collective spin excitations in magnetic solids. Here,…
We use an aluminium single electron transistor with a magnetic gate to directly quantify the chemical potential anisotropy of GaMnAs materials. Uniaxial and cubic contributions to the chemical potential anisotropy are determined from field…