Related papers: Carrier statistics and quantum capacitance effects…
We report on measurements of the quantum capacitance in graphene as a function of charge carrier density. A resonant LC-circuit giving high sensitivity to small capacitance changes is employed. The density of states, which is directly…
The latest field-effect transistors are entering the regime where quantum effects within the conduction channel can play a significant role because of the increasingly reduced dimensions. We investigate the effects of quantized states in…
Quantum correlation and hot-carrier transport represent two fundamentally distinct regimes of electronic conduction, rarely accessible within the same device. Here, we report a state-of-the-art monolayer transition metal dichalcogenides…
The transport properties on the two-dimensional surface of coupled multilayer heterostructures are studied in the integer quantum Hall states. We emphasize the criticality of the surface state and the phase coherent transport properties in…
Future electronics require aggressive scaling of channel material thickness while maintaining device performance. Two-dimensional (2D) semiconductors are promising candidates, but despite over two decades of research, experimental…
We review recent transport experiments that reveal two-threshold voltage-current characteristics, marked by a significant increase in noise between the two threshold voltages, at low electron densities in the insulating regime in…
Two-dimensional semiconductors are structurally ideal channel materials for the ultimate atomic electronics after silicon era. A long-standing puzzle is the low carrier mobility ({\mu}) in them as compared with corresponding bulk…
Two-dimensional transition metal dichalcogenides (TMDCs) have properties attractive for optoelectronic and quantum applications. A crucial element for devices is the metal-semiconductor interface. However, high contact resistances have…
We theoretically consider the carrier density tuned (apparent) two-dimensional (2D) metal-insulator-transition (MIT) in semiconductor heterostructure-based 2D carrier systems as arising from a classical percolation phenomenon in the…
We present a gating scheme to separate even strong parallel conductance from the magneto-transport signatures and properties of a two-dimensional electron system. By varying the electron density in the parallel conducting layer, we can…
This paper introduces a novel method to account for quantum disorder effects into the classical drift-diffusion model of semiconductor transport through the localization landscape theory. Quantum confinement and quantum tunneling in the…
Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be…
We have measured magnetotransport of the two-dimensional electron gas in a Hall bar geometry in the presence of small carrier density gradients. We find that the longitudinal resistances measured at both sides of the Hall bar interchange by…
Accurate determination of carrier transport properties in two-dimensional (2D) materials is critical for designing high-performance nano-electronic devices and quantum information platforms. While first-principles calculations effectively…
Two-dimensional (2D) crystalline semiconductors hold promise for next-generation electronic devices due to its atomical thickness and consequent properties. Despite years of search, literature-reported 2D semiconductors commonly suffered…
We report the transport characteristics of both electrons and holes through narrow constricted crystalline Si "wall-like" long-channels that were surrounded by a thermally grown SiO2 layer. Importantly, as a result of the existence of fixed…
Two-dimensional (2D) van der Waals semiconductors are appealing for low-power transistors. Here, we show the feasibility in enhancing carrier mobility in 2D semiconductors through engineering the vertical distribution of carriers confined…
We theoretically consider charge transport through two quantum dots coupled in series. The corresponding full counting statistics for noninteracting electrons is investigated in the limits of sequential and coherent tunneling by means of a…
In this paper the Boltzmann equation describing the carrier transport in a semiconductor is considered. A modified Chapman-Enskog method is used, in order to find approximate solutions in the weakly non-homogeneous case. These solutions…
Theoretical calculations in the framework of Kane model have been carried out in order to elucidate the role of interband mixing in forming the energy spectrum of two-dimensional carriers, localized in a surface quantum well in narrow gap…