Related papers: Defect and Temperature Dependence of Tunneling in …
In the ideal disorder-free situation, a two-dimensional band gap insulator has an activation energy for conductivity equal to half the band gap $\Delta$. But transport experiments usually exhibit a much smaller activation energy at low…
In a hybrid Superconductor - Insulator - Normal metal tunnel junction biased just below the gap, the extraction of hot electrons out of the normal metal results in electronic cooling effect. The quasiparticles injected in the superconductor…
Recent experimental investigations have demonstrated that doping a semiconductor is a route to increase the thermal boundary conductance at metal/semiconductor interfaces. In this work, the influence of the electrical properties on heat…
Scanning tunneling microscopy/spectroscopy (STM/STS) measurements were carried out on a multi-layered cuprate superconductor Ba$_2$Ca$_5$Cu$_6$O$_{12}$(O$_{1-x}$,F$_x$)$_2$. STM topography revealed random spot structures with the…
The effect of dc electrical stress and breakdown on Josephson and quasiparticle tunneling in Nb/Al/AlOx/Nb junctions with ultrathin AlOx barriers typical for applications in superconductor digital electronics has been investigated. The…
In this paper, through careful calibration, we demonstrate the possibility of using a single set of models and parameters to model the ON current and Sub-threshold Slope (SS) of an nMOSFET at 300K and 5K using Technology Computer-Aided…
During the fabrication of heterogeneous structures inside chips, impurities and defects are inevitably introduced. However, the mechanism by which defects affect interfacial heat transport remains unclear. In this work, a microscale thermal…
The superconducting energy gap of $\rm Ba_{1-x}K_xBiO_3$ has been measured by tunneling. Despite the fact that the sample was macroscopically single phase with very sharp superconducting transition $T_c$ at 32~$K$, some of the measured…
We report the on-wafer characterization of $S$-parameters and microwave noise temperature ($T_{50}$) of discrete metamorphic InGaAs high electron mobility transistors (mHEMTs) at 40 K and 300 K and over a range of drain-source voltages…
The conductivity of extremely high mobility dilute two-dimensional holes in GaAs changes linearly with temperature in the insulating side of the metal-insulator transition. Hopping conduction, characterized by an exponentially decreasing…
We study theoretically the electronic entropy and specific heat in diffusive superconductor-normal metal-superconductor (SNS) Josephson junctions. In particular, we consider the influence of non-idealities occurring in an actual experiment,…
The temperature dependence of the two superconducting gaps in pressurised H_3S at 155 GPa with a critical temperature of 203 K has been determined by data analysis of the experimental curve of the upper critical magnetic field as a function…
We have successfully fabricated micron-scale Cu-AlO$_{x} $-Al-NbN normal metal-insulator-superconductor (NIS) tunnel junction devices, using pulsed laser deposition (PLD) for NbN film growth, and electron-beam lithography and shadow…
In a previous work, we predicted that a thermally biased tunnel junction between two different superconductors can display a thermoelectric effect of nonlinear nature in the temperature gradient, under proper conditions. In this work we…
We consider quasiparticle charge and energy imbalances in a thin superconductor weakly coupled with two normal-metal electrodes via tunnel junctions at low temperatures. Charge and energy imbalances, which can be created by injecting…
We report the superconducting properties of the Co/Pb/Co heterostructures with thin insulating interlayers. The main specific feature of these structures is the intentional oxidation of both superconductor/ferromagnet (S/F) interfaces. We…
Thermal transmission in a molecular transistor with fully spin-polarized electrodes subjected to a temperature gradient is considered. The problem has been solved by using density matrix method in perturbation approach over small tunneling…
We report on fabrication of devices integrating FeTe$_{0.55}$Se$_{0.45}$ with other van-der-Waals materials, measuring transport properties as well as tunneling spectra at variable magnetic fields and temperatures down to 35 mK. Transport…
A high performance triple-heterojunction (3HJ) design has been previously proposed for tunneling FETs (TFETs). Compared with single heterojunction (HJ) TFETs, the 3HJ TFETs have both shorter tunneling distance and two transmission…
We have measured the very low temperature (down to 30 mK) subgap resistance of Titanium Nitride (Superconductor, Tc = 4.6 K)/highly doped Silicon (Semiconductor) SIN junction (the insulating layer stands for the Schottky barrier). As the…