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Disorder at the etched edges of graphene quantum dots (GQD) enables random all-to-all interactions between localized charges in partially-filled Landau levels, providing a potential platform to realize the Sachdev-Ye-Kitaev (SYK) model. We…
The metal-semiconductor contact is a major factor limiting the shrinking of transistor dimension to further increase device performance. In-plane edge contacts have the potential to achieve lower contact resistance due to stronger orbital…
We present a comprehensive theory of spin transport in a non-degenerate semiconductor that is in contact with multiple ferromagnetic terminals. The spin dynamics in the semiconductor is studied during a perturbation of a general,…
Traditionally, Schottky diodes are used statically in the electronic information industry but dynamic state Schottky diodes based applications have been rarely explored. Herein, a novel Schottky diode named moving Schottky diode generator…
We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). Near room temperature, the forward-bias diode…
We describe electrical transport in ideal single-layer graphene at zero applied bias. There is a crossover from collisionless transport at frequencies larger than k_B T/hbar (T is the temperature) to collision-dominated transport at lower…
A microscopic many-body transport approach for electronic properties of spatially inhomogeneous systems is developed at the fully quantum-mechanical level by means of plane wavelets second quantization representation. It is obtained that…
Electron transport in graphene is along the sheet but junction devices are often made by stacking different sheets together in a "side-contact" geometry which causes the current to flow perpendicular to the sheets within the device. Such…
We consider a recent proposal for a physical realization of the Sachdev-Ye-Kitaev (SYK) model in the zeroth-Landau-level sector of an irregularly-shaped graphene flake. We study in detail charge transport signatures of the unique non-Fermi…
A new analytical model based on the WKB approximation for MOSFET-like one-dimensional ballistic transistors with Schottky-Barrier contacts has been developed for the drain current. By using a proper approximation of both the Fermi-Dirac…
The quantum transport formalism based on tight-binding models is known to be powerful in dealing with a wide range of open physical systems subject to external driving forces but is, at the same time, limited by the memory requirement's…
Disordered Fermi-Dirac distributions are used to model, within a straightforward and essentially phenomenological Boltzmann equation approach, the electron/hole transport across graphene puddles. We establish, with striking experimental…
The use of metal van der Waals contacts and the implicit reduction in Fermi-level pinning in contacted semiconductors has led to remarkable device optimizations. For example, using graphene as an electrical contact allows for tunable…
In this paper we present generic properties of quantum transport in mono-layer graphene. In the scheme of the Kubo-Geenwood formula, we compute the square spreading of wave packets of a given energy with is directly related to conductivity.…
Graphene / silicon (G/Si) heterostructures have been studied extensively in the past years for applications such as photodiodes, photodetectors and solar cells, with a growing focus on efficiency and performance. Here, a specific contact…
We derive a fluid-dynamic model for electron transport near a Dirac point in graphene. The derivation is based on the minimum entropy principle, which is exploited in order to close fluid-dynamic equations for quantum mixed states. To this…
We use ab initio density functional calculations to determine the interaction of a graphene monolayer with the Si(111) surface. We found that graphene forms strong bonds to the bare substrate and accommodates the 12% lattice mismatch by…
The observed performances of carbon nanotube field effect transistors are examined using first-principles quantum transport calculations. We focus on the nature and role of the electrical contact of Au and Pd electrodes to open-ended…
We present a general method for calculating coherent electronic transport in quantum wires and tunnel junctions. It is based upon a real space high order finite difference representation of the single particle Hamiltonian and wave…
At an interface between contacts and graphene, the mathematical equation that governs the propagation of electrons transforms from the Schrodinger to the Dirac equation. The condition of current probability conservation at such an interface…