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Related papers: Self-consistent model of edge doping in graphene

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As a possible way of modifying the intrinsic properties of graphene we study the doping of graphene by embedded boron clusters with density functional theory. Cluster doping is technologically relevant as the cluster implantation technique…

Materials Science · Physics 2015-06-15 Cem Ozdogan , Jens Kunstmann , Alexander Quandt

We study the electronic structure of finite armchair graphene nanoribbons using density-functional theory and the Hubbard model, concentrating on the states localized at the zigzag termini. We show that the energy gaps between end-localized…

Mesoscale and Nanoscale Physics · Physics 2013-08-23 M. Ijäs , M. Ervasti , A. Uppstu , P. Liljeroth , J. van der Lit , I. Swart , A. Harju

We consider plane junctions with graphene electrodes, which are formed by a single-level system ("molecule") placed between the edges of two single-layer graphene half planes. We calculate the edge Green functions of the electrodes and the…

Mesoscale and Nanoscale Physics · Physics 2015-06-05 Dmitry A. Ryndyk , Jan Bundesmann , Ming-Hao Liu , Klaus Richter

We propose a class of graphene nanoribbons showing strong intrinsic ferromagnetic behavior due to their asymmetry. Such ribbons are based on a zig-zag edged backbone surmounted by a periodic, triangular notched region of variable size. The…

Making devices with graphene necessarily involves making contacts with metals. We use density functional theory to study how graphene is doped by adsorption on metal substrates and find that weak bonding on Al, Ag, Cu, Au and Pt, while…

Materials Science · Physics 2009-11-13 G. Giovannetti , P. A. Khomyakov , G. Brocks , V. M. Karpan , J. van den Brink , P. J. Kelly

We reveal an edge spin triplet $p-$wave superconducting pairing correlation in slightly doped zigzag graphene nanoribbons. By employing a method that combines random-phase approximation, the finite-temperature determinant quantum Monte…

Strongly Correlated Electrons · Physics 2017-05-05 Tianxing Ma , Fan Yang , Zhongbing Huang , Hai-Qing Lin

We present a joint theoretical and experimental investigation of charge doping and electronic potential landscapes in hybrid structures composed of graphene and semiconducting single layer MoS2. From first-principles simulations we find…

Mesoscale and Nanoscale Physics · Physics 2013-12-23 B. Sachs , L. Britnell , T. O. Wehling , A. Eckmann , R. Jalil , B. D. Belle , A. I. Lichtenstein , M. I. Katsnelson , K. S. Novoselov

The Green functions play a big role in the calculation of the local density of states of the carbon nanostructures. We investigate their nature for the variously oriented and disclinated graphene-like surface. Next, we investigate the case…

Mesoscale and Nanoscale Physics · Physics 2015-11-10 J. Smotlacha , R. Pincak , M. Pudlak

Rotated graphene bilayers form an exotic class of nanomaterials with fascinating electronic properties governed by the rotation angle theta. For large rotation angles, the electron eigenstates are restricted to one layer and the bilayer…

Mesoscale and Nanoscale Physics · Physics 2016-06-29 Guy Trambly de Laissardiere , Omid Faizy Namarvar , Didier Mayou , Laurence Magaud

Employing density-functional theory (DFT) calculations, the generalized-stacking-fault energy (GSFE) curves along two crystallographic slips, glide and shuffle, for both pristine graphene and impurity of boron (B) or nitrogen (N) doped…

Materials Science · Physics 2015-03-10 Fanchao Meng , Bin Ouyang , Jun Song

We have performed scanning gate microscopy (SGM) on graphene field effect transistors (GFET), using a biased metallic nanowire coated with a dielectric layer as a contact mode tip and local top gate. Electrical transport through graphene at…

The implementation of graphene in semiconducting technology requires the precise knowledge about the graphene-semiconductor interface. In our work the structure and electronic properties of the graphene/$n$-Ge(110) interface are…

With nonequilibrium Green's function approach combined with density functional theory, we perform an ab initio calculation to investigate transport properties of graphene nanoribbon junctions self-consistently. Tight-binding approximation…

Mesoscale and Nanoscale Physics · Physics 2015-05-14 G. Yin , Y. Y. Liang , F. Jiang , H. Chen , P. Wang , R. Note , H. Mizuseki , Y. Kawazoe

We demonstrate electrochemical top gating of graphene by using a solid polymer electrolyte. This allows to reach much higher electron and hole doping than standard back gating. In-situ Raman measurements monitor the doping. The G peak…

We achieve fine tuning of graphene effective doping by applying ultrahigh pressures (> 10 GPa) using Atomic Force Microscopy (AFM) diamond tips. Specific areas in graphene flakes are irreversibly flattened against a SiO2 substrate. Our work…

Having access to the chemical environment at the atomic level of a dopant in a nanostructure is crucial for the understanding of its properties. We have performed atomically-resolved electron energy-loss spectroscopy to detect individual…

Unlike single layer graphene, in the case of $AB$-stacked bilayer graphene (BLG) one can induce a non-zero energy gap by breaking the inversion symmetry between the two layers using a perpendicular electric field. This is an essential…

Mesoscale and Nanoscale Physics · Physics 2018-09-05 G. A. Nemnes , T. L. Mitran , A. Manolescu , Daniela Dragoman

Density functional calculations are used to explain the charge transfer doping mechanism by which species physisorptively bonded to graphene can increase its free hole or electron density, without giving rise to defects, and thus maintain a…

Materials Science · Physics 2017-03-22 Haichang Lu , Yuzheng Guo , John Robertson

The simplest tight-binding model is used to study lattice effects on two properties of doped graphene: i) magnetic orbital susceptibility and ii) regular Friedel oscillations, both suppressed in the usual Dirac cone approximation. i) An…

Mesoscale and Nanoscale Physics · Physics 2015-03-17 G. Gómez-Santos , T. Stauber

When combined with graphene, hexagonal boron nitride (h-BN) is an ideal substrate and gate dielectric with which to build metalh-BN|graphene field-effect devices. We use first-principles density functional theory (DFT) calculations for…

Materials Science · Physics 2011-11-11 Menno Bokdam , Petr A. Khomyakov , Geert Brocks , Zhicheng Zhong , Paul J. Kelly