Related papers: A TEM study of Si-SiO2 interfaces in silicon nanod…
Continuous solid electrolyte interface (SEI) formation remains the limiting factor of the lifetime of silicon nanoparticles (SiNPs) based negative electrodes. Methods that could provide clear diagnosis of the electrode degradation are of…
Studying the electrical and structural properties of the interface of the gate oxide (SiO2) with silicon carbide (4H-SiC) is a fundamental topic, with important implications for understanding and optimizing the performances of…
Electron-beam (e-beam) lithography is commonly used in fabricating metal-oxide-silicon (MOS) quantum devices but creates defects at the Si/SiO$_2$ interface. Here we show that a forming gas anneal is effective at removing shallow defects…
Transmission electron microscopy (TEM) has reached ~ 50 picometer resolution in a high vacuum, enabling single-atom sensitive imaging of nanomaterials. Extending this capability to gaseous environments would allow for similar visualizations…
The electronic properties of devices based on two-dimensional materials are significantly influenced by interactions with substrate and electrode materials. Here, we use photoemission electron microscopy to investigate the real- and…
For future nanoelectronic devices - such as room-temperature single electron transistors - the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite. Here, we report an approach to fabricate single Si NCs via…
Transmission electron microscopy (TEM) is carried out in vacuum to minimize the interaction of the imaging electrons with gas molecules while passing through the microscope column. Nevertheless, in typical devices, the pressure remains at…
We present a process for sculpting Bi$_2$Se$_3$ nanoflakes into application-relevant geometries using a high resolution transmission electron microscope. This process takes several minutes to sculpt small areas and can be used to cut the…
Since an ion-beam is a viable attractive alternative to other material surface patterning techniques like an electron-beam, a study of the structure, composition and dimension of patterned lines created on surfaces of Si and SrTiO3 wafers…
The next generation of ultra-low-noise cryogenic detectors for space science applications require continued exploration of materials characteristics at low temperatures. The low noise and good energy sensitivity of current Transition Edge…
Nanoscale control of the quasi-two-dimensional electron gas at the LaAlO3/SrTiO3 (LAO/STO) interface by a conductive probe tip has triggered the development of a number of electronic devices. While the spatial distribution of the…
The path toward Li-ion batteries with higher energy-densities will likely involve use of thin lithium metal (Li) anode (<50 $\mu$m in thickness), whose cyclability today remains limited by dendrite formation and low Coulombic efficiency.…
Nanostructures have become an attractive subject due to many applications, particularly the photonic bandgap effect observed in photonic crystals. Nevertheless, the fabrication of such structures remains a challenge because of accurate…
The nucleation and structure of silicon nanocrystals formed by different preparation conditions and silicon concentration (28 - 70 area %) have been studied using Transmission Electron Microscopy (TEM), Energy Filtered TEM (EFTEM) and…
Vanadium dioxide (VO$_2$) is a strongly-correlated material that exhibits insulator-to-metal transition (IMT) near room temperature, which makes it a promising candidate for applications in nanophotonics or optoelectronics. However,…
The focused helium ion beam microscope is a versatile imaging and nanofabrication instrument enabling direct-write lithography with sub-10-nm resolution. Subsurface damage and swelling of substrates due to helium ion implantation is…
The development of nanoscale solid-state devices exploiting the promising topological surface states of topological insulator materials requires careful device engineering and improved materials quality. For instance, the introduction of a…
The nature of the interface in lateral heterostructures of 2D monolayer semiconductors including its composition, size, and heterogeneity critically impacts the functionalities it engenders on the 2D system for next-generation…
Ion transport across solid solid interfaces is often slower than through the bulk of a material, impeding the charge and discharge rate of batteries. Designing highly conductive interfaces is challenging due to the need to probe ion…
Thin film oxides are a source of endless fascination for the materials scientist. These materials are highly flexible, can be integrated into almost limitless combinations, and exhibit many useful functionalities for device applications.…