Related papers: Rewriting Flash Memories by Message Passing
Regenerating codes are a class of codes proposed for providing reliability of data and efficient repair of failed nodes in distributed storage systems. In this paper, we address the fundamental problem of handling errors and erasures during…
Recently, flash memories have become a competitive solution for mass storage. The flash memories have rather different properties compared with the rotary hard drives. That is, the writing of flash memories is constrained, and flash…
Resistive memories have limited lifetime caused by limited write endurance and highly non-uniform write access patterns. Two main techniques to mitigate endurance-related memory failures are 1) wear-leveling, to evenly distribute the writes…
\emph{Resistive memories}, such as \emph{phase change memories} and \emph{resistive random access memories} have attracted significant attention in recent years due to their better scalability, speed, rewritability, and yet non-volatility.…
Raw bit errors are common in NAND flash memory and will increase in the future. These errors reduce flash reliability and limit the lifetime of a flash memory device. We aim to improve flash reliability with a multitude of low-cost…
Flash memory is a non-volatile computer memory comprised of blocks of cells, wherein each cell can take on q different values or levels. While increasing the cell level is easy, reducing the level of a cell can be accomplished only by…
In data storage and data transmission, certain patterns are more likely to be subject to error when written (transmitted) onto the media. In magnetic recording systems with binary data and bipolar non-return-to-zero signaling, patterns that…
In this paper, we propose novel modulation concepts that we call weak composition modulation (WCM) and composition modulation (CM). We use weak and strict compositions of an integer to form codewords of WCM and CM, respectively. For the…
We propose locally rewritable codes (LWC) for resistive memories inspired by locally repairable codes (LRC) for distributed storage systems. Small values of repair locality of LRC enable fast repair of a single failed node since the lost…
Flash memories intended for SSD and mobile applications need to provide high random I/O performance. This requires using efficient schemes for reading small chunks of data (e.g. 0.5KB - 4KB) from random addresses. Furthermore, in order to…
Large language models (LLMs) are central to modern natural language processing, delivering exceptional performance in various tasks. However, their substantial computational and memory requirements present challenges, especially for devices…
Assuming we are in a Word-RAM model with word size $w$, we show that we can construct in $o(w)$ time an error correcting code with a constant relative positive distance that maps numbers of $w$ bits into $\Theta(w)$-bit numbers, and such…
Rank modulation is a way of encoding information to correct errors in flash memory devices as well as impulse noise in transmission lines. Modeling rank modulation involves construction of packings of the space of permutations equipped with…
In this work, we study a recently proposed direct shaping code for flash memory. This rate-1 code is designed to reduce the wear for SLC (one bit per cell) flash by minimizing the average fraction of programmed cells when storing structured…
Permutation codes and multi-permutation codes have been widely considered due to their various applications, especially in flash memory. In this paper, we consider permutation codes and multi-permutation codes against a burst of stable…
Flash memory is a non-volatile computer memory comprised of blocks of cells, wherein each cell is implemented as either NAND or NOR floating gate. NAND flash is currently the most widely used type of flash memory. In a NAND flash memory,…
This paper summarizes our work on experimentally characterizing, mitigating, and recovering data retention errors in multi-level cell (MLC) NAND flash memory, which was published in HPCA 2015, and examines the work's significance and future…
A construction using the E8 lattice and Reed-Solomon codes for error-correction in flash memory is given. Since E8 lattice decoding errors are bursty, a Reed-Solomon code over GF($2^8$) is well suited. This is a type of coded modulation,…
We develop novel protocols for generating loss-tolerant quantum codes; these are central for safeguarding information against qubit losses, with most crucial applications in quantum communications. Contrary to current proposals, our method…
Large language models (LLMs) have recently demonstrated exceptional code generation capabilities. However, there is a growing debate whether LLMs are mostly doing memorization (i.e., replicating or reusing large parts of their training…