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Interband effects such as coherence/tunneling have recently been shown to give an important contribution to the charge and heat transport properties under certain conditions. These can be captured by adding corrective terms to the…

Materials Science · Physics 2025-12-05 Elena Trukhan , Nakib H. Protik

Using the semiclassical quantum Boltzmann equation (QBE), we numerically calculate the DC transport properties of bilayer graphene near charge neutrality. We find, in contrast to prior discussions, that phonon scattering is crucial even at…

Mesoscale and Nanoscale Physics · Physics 2020-01-22 Glenn Wagner , Dung X. Nguyen , Steven H. Simon

We present a technique for an exact solution of the linearized Boltzmann equation for the electrical and thermal transport coefficients in metals in the low-temperature limit. This renders unnecessary an uncontrolled approximation that has…

Statistical Mechanics · Physics 2021-01-04 J. Amarel , D. Belitz , T. R. Kirkpatrick

We present a combined treatment of the non-equilibrium dynamics and transport of electrons and phonons by carrying out \textit{ab initio} calculations of the fully coupled electron and phonon Boltzmann transport equations. We find that the…

Materials Science · Physics 2020-12-30 Nakib H. Protik , Boris Kozinsky

The Landauer approach to diffusive transport is mathematically related to the solution of the Boltzmann transport equation, and expressions for the thermoelectric parameters in both formalisms are presented. Quantum mechanical and…

Mesoscale and Nanoscale Physics · Physics 2015-05-14 Changwook Jeong , Raseong Kim , Mathieu Luisier , Supriyo Datta , Mark Lundstrom

The scattering of electrons on impurities with internal degrees of freedom is bound to produce the signatures of the scatterer's own dynamics and results in nontrivial electronic transport properties. Previous studies of polaronic…

Strongly Correlated Electrons · Physics 2021-01-18 J. Krsnik , I. Batistić , A. Marunović , E. Tutiš , O. S. Barišić

The electronic transport behaviour of materials determines their suitability for technological applications. We develop an efficient method for calculating carrier scattering rates of solid-state semiconductors and insulators from first…

We analyze the cross-plane miniband transport in n-doped [001] silicon (Si)/germanium (Ge) superlattices using an effective mass approximation (EMA) approach that correctly accounts for the indirect nature of the Si and Ge band gaps.…

Materials Science · Physics 2020-06-11 Manoj Settipalli , Sanghamitra Neogi

Motivated by the increasing number of systems featuring multiple bands at low energy, we address the Boltzmann approach to transport in a multiband weakly disordered noninteracting crystal subject to a small electric field. In general, the…

Mesoscale and Nanoscale Physics · Physics 2022-03-01 Marco Marciani , Lara Benfatto

Using the tools of random matrix theory we develop a statistical analysis of the transport properties of thermoelectric low-dimensional systems made of two electron reservoirs set at different temperatures and chemical potentials, and…

Mesoscale and Nanoscale Physics · Physics 2016-08-23 Adel Abbout , Henni Ouerdane , Christophe Goupil

Recently, $\mathrm{BaSn_2}$ is predicted to be a strong topological insulator by the first-principle calculations. It is well known that topological insulator has a close connection to thermoelectric material, such as $\mathrm{Bi_2Te_3}$…

Materials Science · Physics 2016-12-21 San-Dong Guo , Liang Qiu

The transport properties of the perovskites KTaO$_3$ are calculated using first-principles methods. Our study is based on Boltzmann transport theory and the relaxation time approximation, where the scattering rate is calculated using an…

Materials Science · Physics 2016-01-26 Burak Himmetoglu , Anderson Janotti

We drive a quantum kinetic equation under discrete impurities for the Wigner function from the quantum Liouville equation. To attain this goal, the electrostatic Coulomb potential is separated into the long- and short-range parts, and the…

Mesoscale and Nanoscale Physics · Physics 2021-08-04 Nobuyuki Sano

We present an extension of the work of D'Amato and Pastawski on electron transport in a one-dimensional conductor modeled by the tight binding lattice Hamiltonian and in which inelastic scattering is incorporated by connecting each site of…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 Dibyendu Roy , Abhishek Dhar

We present a numerical study on the intraband optical conductivity of hot carriers at quasi-equilibria in photoexcited graphene based on the semiclassical Boltzmann transport equations (BTE) with the aim of understanding the effects of…

Mesoscale and Nanoscale Physics · Physics 2021-02-24 Masatsugu Yamashita , Chiko Otani

We present a scattering approach for the study of the transport and thermodynamics of quantum systems strongly coupled to their thermal environment(s). This formalism recovers the standard non-equilibrium Green's function expressions for…

Statistical Mechanics · Physics 2020-07-15 Alexander Semenov , Abraham Nitzan

We study the influence of inelastic electron-electron scattering on the temperature variation of the Seebeck coefficient in the normal phase of quasi-one-dimensional organic superconductors. The theory is based on the numerical solution of…

Strongly Correlated Electrons · Physics 2016-12-07 M. Shahbazi , C. Bourbonnais

We present systematic theoretical results on thermoelectric effects in semimetals based on the variational method of the linearized Boltzmann equation. Inelastic electron-hole scattering is known to play an important role in the unusual…

Strongly Correlated Electrons · Physics 2023-03-31 Keigo Takahashi , Hiroyasu Matsuura , Hideaki Maebashi , Masao Ogata

Topological effects arising from the Berry curvature lead to intriguing transport signatures in quantum materials. Two such phenomena are the chiral anomaly and nonlinear Hall effect (NLHE). A unified description of these transport regimes…

Materials Science · Physics 2026-03-25 Dhruv C. Desai , Lauren A. Tan , Jin-Jian Zhou , Shiyu Peng , Jinsoo Park , Marco Bernardi

Interstitial defects are inevitably present in doped semiconductors that enable modern-day electronic, optoelectronic or thermoelectric technologies. Understanding of stability of interstitials and their bonding mechanisms in the silicon…

Materials Science · Physics 2019-01-30 Vitaly S. Proshchenko , Pratik P. Dholabhai , Sanghamitra Neogi