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Photonics caught world attention since channel capacity limit of metallic interconnects approached due to research and design in high speed digital processors. Use of dielectrics, instead, suitable for light propagation was more attractive…
Femtosecond laser modification of fused silica enables precise surface tailoring for the fabrication of micro-optical components such as microlenses and diffractive elements. However, the process is governed by laser-matter interactions…
The transparency of silicon in the infrared region enables the design of nano/microstructures for implementation in devices to harvest the infrared (IR) part of the solar spectrum. Herein we report a strategy that uses arrays of inverted…
Integration of optical interconnects with silicon-based electronics can address the growing limitations facing chip-scale data transport as microprocessors become progressively faster. However, material lattice mismatch and incompatible…
The bottleneck in achieving fully integrated silicon photonics lies in silicon-based light-emitting devices that are compatible with standard CMOS technology. Dislocation loops by implanting boron into silicon and annealing represents an…
The ability to engineer localized surface plasmon resonances at large scale usually relies on precise nanoscale patterning. Here, we demonstrate that mid-infrared plasmonic responses can instead emerge in unpatterned polysilicon films…
The photoluminescence and spin properties of ensembles of color centers in silicon carbide are enhanced by fabricating optically isolated slab waveguide structures and carefully controlling annealing and cooling conditions. We find that the…
While ultrafast laser welding is an appealing technique for bonding transparent workpieces, it is not applicable for joining silicon samples due to nonlinear propagation effects which dramatically diminishes the possible energy deposition…
The rapid expansion of cloud computing and artificial intelligence has driven the demand for faster optical components in data centres to unprecedented levels. A key advancement in this field is the integration of multiple photonic…
We demonstrate a simple and high-performance laser-assisted technique for silver nanoring fabrication, which includes the ablation of the Ag film by focused nanosecond pulses and subsequent reactive ion polishing. The nanoring diameter and…
Deciding on appropriate materials and designs for use in light sails, like the one proposed in the Breakthrough Starshot Initiative, is a topic that requires much care and forethought. Here, we offer a feasible option in the form of…
Photoluminescence is observed at room temperature from phonon-assisted band-to-band emission in Si (1.067 eV peak) using unpatterned bulk p-type silicon wafer samples that were spin-coated with Er-doped (6 at. %) silica-gel films (0.13…
Silicon lasers have been the most challenging element for the monolithic integrated Si photonics. Here we report the first successful all-Si laser at room temperature based on silicon nanocrystals (Si NCs) with high optical gains. The…
We report on the first observation of electroluminescence amplification with a Microstrip Plate immersed in liquid xenon. The electroluminescence of the liquid, induced by alpha-particles, was observed in an intense non-uniform electric…
Featured with a plethora of electric and magnetic Mie resonances, high index dielectric nanostructures offer a versatile platform to concentrate light-matter interactions at the nanoscale. By integrating unique features of far-field…
During the formation of Si nanocrystals (Si NC) in Si$_x$C$_{1-x}$ layers via solid-phase crystallization, the unintended formation of nanocrystalline SiC reduces the minority carrier lifetime and therefore the performance of…
Dielectric metasurfaces require high refractive index contrast materials for optimum performance. This requirement imposes a severe restraint; devices have either been demonstrated at wavelengths of 700nm and above using high-index…
One of the solutions enabling performance progress, which can overcome the downsizing limit in silicon technology, is the integration of different functional optoelectronic devices within a single chip. Silicon with its indirect band gap…
The influence of growth regimes of the silicon capping layer on the optical properties of heterostructures with submonolayer InAs quantum dots embedded in a silicon matrix has been studied. The photoluminescence signal at 1650 nm from…
We investigate the effect of light soaking and forward electric bias treatment on SHJ solar cells and modules, and in particular the influence of the thermal treatment occurring during lamination. A substantial performance increase is…