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We demonstrate an important step towards on chip integration of single photon sources operating at room temperature fiber coupling of a directional quantum emitter with back-excitation. Directionality is achieved with a hybrid…
Color centers in silicon are emerging as spin-photon interfaces operating at telecommunication wavelengths. The nanophotonic device integration of silicon color centers via ion implantation leads to significant optical linewidth broadening,…
We report the demonstration of continuous-wave (CW) lasing at room temperature from a III-V semiconductor nanowire integrated into a Si photonic crystal (PhC) cavity. Conventional hybrid nanowire lasers [M. Takiguchi. et.al., APL Photonics,…
Expanding far beyond traditional applications in optical interconnects at telecommunications wavelengths, the silicon nanophotonic integrated circuit platform has recently proven its merits for working with mid-infrared (mid-IR) optical…
We investigate the performance of thermoradiative (TR) cells using the III-V group of semiconductors, which include GaAs, GaSb, InAs, and InP, with the aim of determining their efficiency and finding the best TR cell materials among the…
Sapphire optical fiber shows great promise for remote sensing in extreme environments approaching 2000 degC, by using laser-processing to form a single-mode waveguide within it. However, for practical application, longer devices with high…
Next generation multi-ton scale noble liquid experiments have the unique opportunity to discover dark matter particles at the TeV scale, reaching the sensitivity of 10^-48 cm2 in the WIMP nucleon scattering cross-section. A prerequisite…
Semiconducting nanowires offer many opportunities for electronic and optoelectronic device applications due to their special geometries and unique physical properties. However, it has been challenging to synthesize semiconducting nanowires…
Frequency combs, specialized laser sources emitting multiple equidistant frequency lines, have revolutionized science and technology with unprecedented precision and versatility. Recently, integrated frequency combs are emerging as scalable…
The bottleneck in achieving fully integrated silicon photonics lies in silicon-based light-emitting devices that are compatible with standard CMOS technology. Dislocation loops by implanting boron into silicon and annealing represents an…
Germanium nanostructures offer significant potential in developing advanced integrated circuit and disruptive quantum technologies, yet achieving both scalability and high carrier mobility remains a challenge in materials science. Here, we…
The design, calibration, and initial application of a non-contact high-temperature furnace developed for in situ synchrotron X-ray experiments are presented. The system enables a stable operation up to 1000 {\deg}C, with heating rates…
In this work, we present the monolithic integration of GaAsP and GaInP islands, selectively grown on a CMOS-compatible Si nanotip wafer using gas-source molecular beam epitaxy via a nanoheteroepitaxy approach. These alloys span a wide…
Featured with a plethora of electric and magnetic Mie resonances, high index dielectric nanostructures offer a versatile platform to concentrate light-matter interactions at the nanoscale. By integrating unique features of far-field…
Silicon-based light sources including light-emitting diodes (LEDs) and laser diodes (LDs) for information transmission are urgently needed for developing monolithic integrated silicon photonics. Silicon doped by ion implantation with erbium…
We investigate the effect of tunable optical feedback on a commercial DFB laser edge coupled to a Silicon Photonics planar integrated circuit in which a tunable reflector has been implemented by means of a ring resonator based add-drop…
III-V semiconductor nanowires are considered promising building blocks for advanced photonic devices. One of the key advantages is that the lattice mismatch can easily be accommodated in 1D structures, resulting in superior heteroepitaxial…
Two-dimensional materials with layered structures, appropriate bandgap, and high carrier mobilities have gathered tremendous interests due to their potential applications in optoelectronic and photovoltaic devices. Here, we report the…
Confining photons in a finite volume is in high demand in modern photonic devices. This motivated decades ago the invention of photonic crystals, featured with a photonic bandgap forbidding light propagation in all directions. Recently,…
Low cost, small footprint, highly efficient and mass producible on-chip wavelength-division-multiplexing (WDM) light sources are key components in future silicon electronic and photonic integrated circuits (EPICs) which can fulfill the…