Related papers: Intervalley scattering by charged impurities in gr…
We present a quantum analysis of the massless excitations in graphene with a charge impurity. When the effective charge exceeds a certain critical value, the spectrum is quantized and is unbounded from below. The corresponding eigenstates…
We calculate the probabilities of two- and four-phonon Raman scattering in graphene and show how the relative intensities of the overtone peaks encode information about relative rates of different inelastic processes electrons are subject…
We have utilized the finite-difference approach to explore electron-tunneling properties in gapped graphene through various electrostatic-potential barriers changing from Gaussian to a triangular envelope function in comparison with a…
We review the theoretical and experimental results connected with the electron states in two-dimensional Dirac systems paying a special attention to the atomic collapse in graphene. Two-electron bound states of a Coulomb impurity are…
With a conserving formalism within the self-consistent Born approximation, we study the Hall conductivity of Dirac fermions in graphene under charged impurity scatterings. The calculated inverse Hall coefficient is compared with the…
The electric conductance of a strip of undoped graphene increases in the presence of a disorder potential, which is smooth on atomic scales. The phenomenon is attributed to impurity-assisted resonant tunneling of massless Dirac fermions.…
Supplementary Information Content: 1. Sample preparation; 2. Background subtraction of Shubnikov-de Haas (SdH) oscillations; 3. The effect of density inhomogeneity on the quantum scattering time tau_q; 4. Determine the concentration of…
Two-dimensional semiconductors are structurally ideal channel materials for the ultimate atomic electronics after silicon era. A long-standing puzzle is the low carrier mobility ({\mu}) in them as compared with corresponding bulk…
We review our recent work on the physical mechanisms limiting the mobility of graphene on SiO2. We have used intentional addition of charged scattering impurities and systematic variation of the dielectric environment to differentiate the…
We present exact analytical and numerical results for the electronic spectra and the Friedel oscillations around a substitutional impurity atom in a graphene lattice. A chemical dopant in graphene introduces changes in the on-site potential…
It is shown that a magnetic field dramatically affects the problem of supercritical charge in graphene making any charge in gapless theory supercritical. The cases of radially symmetric potential well and Coulomb center in an homogeneous…
In this paper, the form of the indirect interaction between local impurities in flakes and in graphene ring is analytically investigated. We calculate this characteristic in the framework of the tight-binding model for a finite nanocarbon…
We study the electric and thermal transport of the Dirac carriers in monolayer graphene using the Boltzmann-equation approach. Motivated by recent thermopower measurements [F. Ghahari, H.-Y.~Xie, T. Taniguchi, K. Watanabe, M.~S.~Foster, and…
Multi-layer graphene on the carbon face of silicon carbide is an intriguing electronic system which typically consists of a stack of ten or more layers. Rotational stacking faults in this system dramatically reduce inter-layer coherence. In…
We develop a theory of Coulomb interaction-related contribution to the photogalvanic current of the carriers of charge in two-dimensional non-centrosymmetric Dirac materials possessing a nontrivial structure of valleys and exposed to an…
Carrier transport in gated 2D graphene monolayers is theoretically considered in the presence of scattering by random charged impurity centers with density $n_i$. Excellent quantitative agreement is obtained (for carrier density $n >…
Ionic liquid gating has a number of advantages over solid-state gating, especially for flexible or transparent devices and for applications requiring high carrier densities. However, the large number of charged ions near the channel…
Random vacancies in a graphene monolayer induce defect states that are known to form a narrow impurity band centered around zero energy at half-filling. We use a space-resolved formulation of the quantum metric and establish a strong…
The strong long-range Coulomb interaction between massless Dirac fermions in graphene can drive a semimetal-insulator transition. We show that this transition is strongly suppressed when the Coulomb interaction is screened by such effects…
Screening of a large external charge in graphene is studied. The charge is assumed to be displaced away or smeared over a finite region of the graphene plane. The initial decay of the screened potential with distance is shown to follow the…