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Nominally undoped silicon nanowires (NW) were grown by catalytic chemical vapor deposition. The growth process was optimized to control the NWs diameters by using different Au catalyst thicknesses on amorphous SiO2, Si3N4, or crystalline-Si…

Two-dimensional (2D) semiconductors are likely to dominate next-generation electronics due to their advantages in compactness and low power consumption. However, challenges such as high contact resistance and inefficient doping hinder their…

Materials Science · Physics 2024-10-11 Raagya Arora , Ariel R. Barr , Daniel T. Larson , Michele Pizzochero , Efthimios Kaxiras

Graphene, due to its unique electronic structure favoring high carrier mobility, is considered a promising material for use in high-speed electronic devices in the post-silicon electronic era. For this reason, experimental research on…

Mesoscale and Nanoscale Physics · Physics 2020-09-17 Giovanni Spinelli , Patrizia Lamberti , Vincenzo Tucci , Francisco Pasadas , David Jiménez

We propose several novel physical phenomena based on nano-scale helical wires. Applying a static electric field transverse to the helical wire induces a metal to insulator transition, with the band gap determined by the applied voltage.…

Mesoscale and Nanoscale Physics · Physics 2013-05-29 Xiao-Liang Qi , Shou-Cheng Zhang

Polymer based printable organic thin film transistor (OTFT) is a viable low cost alternative to amorphous silicon based thin film transistors and possesses light-weight and flexibility advantage. In this paper, we report on the hole…

Materials Science · Physics 2013-12-04 Akshaya K. Palai , N. Periasamy , Meghan P. Patankar , K. L. Narasimhan

The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics. Further development in spintronic devices requires electrical manipulation of spin…

Mesoscale and Nanoscale Physics · Physics 2016-11-15 Wenjing Yan , Oihana Txoperena , Roger Llopis , Hanan Dery , Luis E. Hueso , Fèlix Casanova

Modern industry seeks next-generation microelectronics with ultra-low dissipation and noise beyond semiconducting systems, where the superconducting electronics offer promise. Its physical foundation is the superconducting diode effect…

Nanopositioning techniques currently applied to characterize physical properties of materials interesting for applications at the microscopic scale rely on high-voltage electronic control circuits that should have the lowest possible noise…

Instrumentation and Detectors · Physics 2014-09-12 Cristian H. Belussi , Mariano Gómez Berisso , Yanina Fasano

All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy…

Optical phase shifters are essential elements in photonic integrated circuits (PICs) and function as a direct interface to program the PIC. Non-volatile phase shifters, which can retain information without a power supply, are highly…

Controlling nonlinear effects in micro- and nano-electro-mechanical systems is essential for unlocking their full potential in sensing, signal processing, and frequency control. In this study, we develop a voltage-dependent Hamiltonian…

Mesoscale and Nanoscale Physics · Physics 2026-02-17 Narges Tarakameh Samani , Farhad Shahbazi , Mehdi Abdi

Two-dimensional crystals have emerged as a new class of materials with novel properties that may impact future technologies. Experimentally identifying and characterizing new functional two-dimensional materials in the vast material pool is…

Materials Science · Physics 2015-06-18 Likai Li , Yijun Yu , Guo Jun Ye , Qingqin Ge , Xuedong Ou , Hua Wu , Donglai Feng , Xian Hui Chen , Yuanbo Zhang

Supercurrent diodes are nonreciprocal electronic elements whose switching current depends on their flow direction. Recently, a variety of composite systems combining different materials and engineered asymmetric superconducting devices have…

Long-range moire patterns in twisted WSe2 enable a built-in, moire-length-scale ferroelectric polarization that can be directly harnessed in electronic devices. Such a built-in ferroic landscape offers a compelling means to enable…

Materials Science · Physics 2025-12-10 Arup Singha , Shaili Sett , Kenji Watanabe , Takashi Taniguchi , Arindam Ghosh , Rahul Debnath

Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of…

Modern electronics are developing electronic-optical integrated circuits, while their electronic backbone, e.g. field-effect transistors (FETs), remains the same. However, further FET down scaling is facing physical and technical…

Optics · Physics 2020-06-02 Jason K. Marmon , Satish C. Rai , Kai Wang , Weilie Zhou , Yong Zhang

Artificial tuning of dielectric parameters can result from interface conductivity in polycrystalline materials. In ferroelectric single crystals, it was already shown that ferroelectric domain walls can be the source of such artificial…

Materials Science · Physics 2015-06-05 R. Anand Theerthan , Alla Artemenko , Mario Maglione

We study spin-dependent transport through a quantum nanostructure composed of a quantum dot (QD) surrounded by a quantum nanoring. The nanostructure is side-attached to source and drain electrodes and we assume that the confining potential…

Mesoscale and Nanoscale Physics · Physics 2024-10-01 Barbara Kedzierska , Anna Gorczyca-Goraj , Elzbieta Zipper , Maciej M. Maska

Thermal management has become a promising field in recent years due to the limitation of energy resources and the global warming. An important topic in improving the efficiency of thermal energy utilization is how to control the flows of…

Applied Physics · Physics 2020-12-30 Fangqi Chen , Xiaojie Liu , Yanpei Tian , Duanyang Wang , Yi Zheng

We have decomposed the modeling of the field-effect transistors into the two independent parts: the current continuity based kinetics and the charge neutrality based electrostatics. The former part, that is universal for all FETs, leads to…

Mesoscale and Nanoscale Physics · Physics 2018-10-05 Gennady Zebrev
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