Related papers: Electrically-tunable hole g-factor of an optically…
We demonstrate fast initialization of a single hole spin captured in an InGaAs quantum dot with a fidelity F>99% by applying a magnetic field parallel to the growth direction. We show that the fidelity of the hole spin, prepared by…
We propose and analyze a new method for manipulation of a heavy hole spin in a quantum dot. Due to spin-orbit coupling between states with different orbital momenta and opposite spin orientations, an applied rf electric field induces…
We report tunneling spectroscopy measurements of the Zeeman spin splitting in InAs few-electron quantum dots. The dots are formed between two InP barriers in InAs nanowires with a wurtzite crystal structure grown by chemical beam epitaxy.…
Hole spin qubits in quasi one-dimensional structures are a promising platform for quantum information processing because of the strong spin-orbit interaction (SOI). We present analytical results and discuss device designs that optimize the…
GaAs/AlGaAs quantum dots grown by in-situ droplet etching and nanohole infilling offer a combination of strong charge confinement, optical efficiency, and spatial symmetry required for polarization entanglement and spin-photon interface.…
Many modern spin-based devices rely on the spin-orbit interaction, which is highly sensitive to the host semiconductor heterostructure and varies substantially depending on crystal direction, crystal asymmetry (Dresselhaus), and quantum…
We study the spin filling of a semiconductor quantum dot using excited-state spectroscopy in a strong magnetic field. The field is oriented in the plane of the two-dimensional electron gas in which the dot is electrostatically defined. By…
We have determined the Land\'e factor g* in self-organized InAs quantum dots using resonant-tunnelling experiments. With the magnetic field applied parallel to the growth direction z we find g*_\parallel = 0.75 for the specific dot…
We propose that phonons coupled to electrons play an important role in both the fundamental phenomenology of electron spin resonance as well as the interpretation of such measurements. By including spin-dependent electron-phonon…
Circularly-polarized magneto-photoluminescence (magneto-PL) technique has been applied to investigate Zeeman effect in InAs/InGaAs/InAlAs quantum wells (QWs) in Faraday geometry. Structures with different thickness of the QW barriers have…
According to a prevailing opinion, the electron g-factor ge = 2 is exclusively a quantum feature. Here we demonstrate it could be explained classically only in relativistic terms. The electron is treated as an extended, continuous, but…
We present theoretical calculations of the Land\'e g-factors of semiconductor nanostructures using a time-dependent empirical tight-binding method. The eigenenergies and eigenfunctions of the band edge states are calculated as a function of…
We consider a spin circuit-QED device where a superconducting microwave resonator is capacitively coupled to a single hole confined in a semiconductor quantum dot. Thanks to the strong spin-orbit coupling intrinsic to valence-band states,…
We demonstrated the cancellation of the external magnetic field by the nuclear field at one edge of the nuclear polarization bistability in single InAlAs quantum dots. The cancellation for the electron Zeeman splitting gives the precise…
We show that the electron and hole Lande g factors in self-assembled III-V quantum dots have a rich structure intermediate between that expected for paramagnetic atomic impurities and for bulk semiconductors. Strain, dot geometry, and…
The temperature dependence of the electron spin $g$ factor in GaAs is investigated experimentally and theoretically. Experimentally, the $g$ factor was measured using time-resolved Faraday rotation due to Larmor precession of electron spins…
The Land\'e $g$-factor of charge carriers is a key parameter in spin physics controlling spin polarization and spin dynamics. In turn, it delivers information of the electronic band structure in vicinity of the band gap and its modification…
We report magneto-transport measurements on high-mobility two-dimensional electron systems (2DESs) confined in In_0.75Ga_0.25As/In_0.75Al_0.25As single quantum wells. Several quantum Hall states are observed in a wide range of temperatures…
A system of two quantum wells (QW), one made of HgCdTe and the other of HgCdMnTe, subjected to electric and magnetic fields $F$ and $B$ parallel to the growth direction, is proposed and described theoretically. It is shown that in such a…
Holes in germanium (Ge) exhibit strong spin-orbit interaction, which can be exploited for fast and all-electrical manipulation of spin states. Here, we report transport experiments in a tunable Ge hut wire hole double quantum dot. We…