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Related papers: Lattice strain at c-Si surfaces: a density functio…

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A stress exists in solids surfaces, similarly to liquids, also if the underlying bulk material is stress-free. This paper investigates the surface stress effect on the measured value of the Si lattice parameter used to determine the…

Materials Science · Physics 2013-02-20 Carlo Sasso , Danilo Quagliotti , Enrico Massa , Giovanni Mana , Ulrich Kuetgens

New results are reported from an ongoing international research effort to accurately determine the Avogadro constant by counting the atoms in an isotopically enriched silicon crystal. The surfaces of two 28Si-enriched spheres were…

The measurement of the lattice-parameter of silicon by x-ray interferometry assumes the use of strain-free crystals. This might not be the case because surface relaxation, reconstruction, and oxidation cause strains without the application…

Computational Physics · Physics 2016-11-23 C Melis , S Giordano , L Colombo , G Mana

The spacing of the \{220\} lattice planes of a $^{28}$Si crystal was measured by combined x-ray and optical interferometry to a $3.5\times 10^{-9}$ relative accuracy. The result is $d_{220}=(192014712.67 \pm 0.67)$ am, at 20.0 $^\circ$C and…

Atomic Physics · Physics 2015-05-20 Enrico Massa , Giovanni Mana , Ulrich Kuetgens , Luca Ferroglio

Analytical measurements of the 28Si crystal used for the determination of the Avogadro constant are essential to prevent biased results or under-estimated uncertainties. A review of the existing data confirms the high-purity of silicon with…

We investigated the use of neutron activation to estimate the 30Si mole fraction of the ultra-pure silicon material highly enriched in 28Si for the measurement of the Avogadro constant. Specifically, we developed a relative method based on…

An additional value of the Avogadro constant was obtained by counting the atoms in isotopically enriched Si spheres. With respect to the previous determination, the spheres were etched and repolished to eliminate metal contaminations and to…

Crystal lattice deformations can be described microscopically by explicitly accounting for the position of atoms or macroscopically by continuum elasticity. In this work, we report on the description of continuous elastic fields derived…

Materials Science · Physics 2019-04-25 Marco Salvalaglio , Axel Voigt , Ken R. Elder

We present new atomistic models of amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) surfaces. The a-Si model included 4096 atoms and was obtained using local orbital density functional theory. By analyzing a slab model…

Materials Science · Physics 2025-06-24 Kishor Nepal , Aashish Gautam , Chinonso Ugwumadu , David Drabold

Strain has a crucial effect on the optical and electronic properties of nanostructures. We calculate the atomistic strain distribution in silicon nanocrystals up to a diameter of 3.2 nm embedded in an amorphous silicon dioxide matrix. A…

Mesoscale and Nanoscale Physics · Physics 2009-05-21 Dündar E. Yılmaz , Ceyhun Bulutay , Tahir Çağın

The measurement of the angle between the interferometer front mirror and the diffracting planes is a critical aspect of the Si lattice-parameter measurement by combined x-ray and optical interferometry. In addition to being measured…

Instrumentation and Detectors · Physics 2022-02-16 Carlo P. Sasso , Giovanni Mana , Enrico Massa

The latest determination of the Avogadro constant, carried out by counting the atoms in a pure silicon crystal highly enriched in 28Si, reached the target 2x10-8 relative uncertainty required for the redefinition of the kilogram based on…

Instrumentation and Detectors · Physics 2016-01-25 Giancarlo D'Agostino , Marco Di Luzio , Giovanni Mana , Massimo Oddone , Axel Pramann , Michele Prata

We investigate connections between the continuum and atomistic descriptions of deformable crystals, using certain interesting results from number theory. The energy of a deformed crystal is calculated in the context of a lattice model with…

Mathematical Physics · Physics 2020-07-02 Phoebus Rosakis

The crystal structure of solid oxygen at low temperatures and at pressures up to 7 GPa is studied by theoretical calculations. In the calculations, the adiabatic potential of the crystal is approximated by a superposition of pair-potentials…

Materials Science · Physics 2009-11-13 Kazuki Nozawa , Nobuyuki Shima , Kenji Makoshi

The deposition of Al film onto the (111) surface of a p-Si crystal was shown to induce a deformation in the near-surface layer of the latter. Provided that the crystal strain is elastic and uniaxial, the gettering of defects in the…

The determination of the Avogadro constant plays a key role in the redefinition of the kilogram in terms of a fundamental constant. The present experiment makes use of a silicon single-crystal highly enriched in 28Si that must have a total…

Chemical Physics · Physics 2013-09-20 G. DAgostino , L. Bergamaschi , L. Giordani , G. Mana , M. Oddone

Since Br adsorption on Au(100) displays an incommensurate ordered phase, a lattice-gas treatment of the adlayer configurations is not reliable. We therefore use density functional theory slab calculations to determine the parameters…

Statistical Mechanics · Physics 2009-11-10 S. J. Mitchell , M. T. M. Koper

We have theoretically examined the size dependence of the equilibrium lattice constant of nanocrystals of Si, GaAs and CdSe. While deviations from the bulk lattice constant are as large as 1-2% for unpassivated nanocrystals of Si, the…

Materials Science · Physics 2008-02-12 Roby Cherian , Priya Mahadevan

The layered structure of tetragonal Ni(CN)2, consisting of square-planar Ni(CN)4 units linked in the a-b plane, with no true periodicity along the c-axis, is expected to show anisotropic compression on the application of pressure.…

We employ three dimensional x-ray coherent diffraction imaging to map the lattice strain distribution, and to probe the elastic properties of a single crystalline Ni (001) nanowire grown vertically on an amorphous Si02 || Si substrate. The…

Mesoscale and Nanoscale Physics · Physics 2015-06-05 E. Fohtung , J. W. Kim , Keith T. Chan , Ross Harder , Eric E. Fullerton , O. G. Shpyrko
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