Related papers: Spin-Orbit Proximity Effect in Graphene
Graphene field-effect transistors are integrated with solution-processed multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The resulting devices exhibit low-operating voltage (2 V), negligible hysteresis, current…
Recently, it has been shown that oxide barriers in graphene-based non-local spin-valve structures can be the bottleneck for spin transport. The barriers may cause spin dephasing during or right after electrical spin injection which limit…
Introducing topologically protected skyrmions in graphene holds significant importance for developing high-speed, low-energy spintronic devices. Here, we present a centrosymmetric ferromagnetic graphene/trilayer Cr2Ge2Te6/graphene…
In recent years, new spin-dependent thermal effects have been discovered in ferromagnets, stimulating a growing interest in spin caloritronics, a field that exploits the interaction between spin and heat currents. Amongst the most…
We investigate the effect of the twist angle on the proximity spin-orbit coupling (SOC) in graphene/NbSe$_2$ heterostructures from first principles. The low-energy Dirac bands of several different commensurate twisted supercells are fitted…
Electronic carriers in graphene show a high carrier mobility at room temperature. Thus, this system is widely viewed as a potential future charge-based high-speed electronic-material to complement- or replace- silicon. At the same time, the…
Proximity effects induced in the 2D Dirac material graphene potentially open access to novel and intriguing physical phenomena. Thus far, the coupling between graphene and ferromagnetic insulators has been experimentally established.…
The paper presents the author view on spin-rooted properties of graphene supported by numerous experimental and calculation evidences. Dirac fermions of crystalline graphene and local spins of graphene molecules are suggested to meet a…
Van der Waals heterostructures offer a versatile platform for tailoring electrical, magnetic, optical, and spin transport properties of materials through proximity effects. Notably, hexagonal transition metal dichalcogenides have been shown…
Spintronics involves the development of low-dimensional electronic systems with potential use in quantum-based computation. In graphene, there has been significant progress in improving spin transport characteristics by encapsulation and…
We consider an effective model for graphene with interface-induced spin-orbit coupling and calculate the quantum Hall effect in the low-energy limit. We perform a systematic analysis of the contribution of the different terms of the…
The interplay between quantum Hall states and Cooper pairs is usually hindered by the suppression of the superconducting state due to the strong magnetic fields needed to observe the quantum Hall effect. From this point of view graphene is…
Our theoretical study unfolds the topological phase transitions (within bands of the Moir\'e super-lattice) in small angle twisted double bilayer graphene (tDBLG) under the influence of external gate voltage and intrinsic spin-orbit…
Electrostatic gating lies in the heart of modern FET-based integrated circuits. Usually, the gate electrode has to be placed very close to the conduction channel, typically a few nanometers, in order to achieve efficient tunability.…
Monolayer graphene with an energy gap presents a pseudospin symmetry broken ferromagnet with a perpendicular pseudomagnetization whose direction is switched by altering the type of doping between n and p. We demonstrate an electrical…
Among many remarkable qualities of graphene, its electronic properties attract particular interest due to a massless chiral character of charge carriers, which leads to such unusual phenomena as metallic conductivity in the limit of no…
Spintronics aims to exploit the spin degree of freedom in solid state devices for data storage and information processing technologies. The fundamental spintronic device concepts such as creation, manipulation and detection of spin…
Vertically stacked two-dimensional (2D) graphene-based van der Waals (vdW) heterostructures have emerged as the technological materials for electronic and optoelectronic device applications. In this regard, for the first time, we…
Growth of graphene on monolayer transition-metal dichalcogenides presents opening on band gap and giant spin-orbit coupling which paves the way to achieve a useful hybrid structure for electronics and spintronics applications. Increase of…
We analyze the spin-orbit coupling effects in a three-degree twisted bilayer heterostructure made of graphene and an in-plane ferroelectric SnTe, with the goal of transferring the spin-orbit coupling from SnTe to graphene, via the proximity…