Related papers: Gate controllable spin pumping in graphene via rot…
We study graphene ferromagnet/superconductor/ferromagnet (F/S/F) nanostructures via a microscopic self-consistent Dirac Bogoliubov-de Gennes formalism. We show that as a result of proximity effects, experimentally accessible spin switching…
We report direct electrical detection of spin pumping, using a lateral normal metal/ferromagnet/normal metal device, where a single ferromagnet in ferromagnetic resonance pumps spin polarized electrons into the normal metal, resulting in…
We study spin dependent transport through a magnetic bilayer graphene nanojunction configured as two dimensional normal/ferromagnetic/normal structure where the gate-voltage is applied on the layers of ferromagnetic graphene. Based on the…
Employing first-principles calculations, we investigate efficiency of spin injection from a ferromagnetic (FM) electrode (Ni) into graphene and possible enhancement by using a barrier between the electrode and graphene. Three types of…
We study the spin current injected by spin pumping into single layer graphene and the two-dimensional electron gas (2DEG) with ferromagnetic contacts using scattering theory. The spin currents pumped into graphene are very distinct from…
We propose encapsulating type-A antiferromagnetic semiconductors between graphene layers to realize a gate-tunable synthetic antiferromagnet with nonrelativistic spin splitting, enabling efficient spintronic transport via graphene. Ab…
We propose a photoexcitation scheme for pure spin current generation in graphene subject to a Rashba spinorbit coupling. Although excitation using circularly-polarized light does not result in optical orientation of spins in graphene unless…
Ferromagnetic resonance (FMR) spin pumping is a rapidly growing field which has demonstrated promising results in a variety of material systems. This technique utilizes the resonant precession of magnetization in a ferromagnet to inject…
We propose a new type of quantum pump made out of graphene, adiabatically driven by oscillating voltages applied to two back gates. From a practical point of view, graphene-based quantum pumps present advantages as compared to normal pumps,…
Electrical spin injection from ferromagnetic metals into graphene is hindered by the impedance mismatch between the two materials. This problem can be reduced by the introduction of a thin tunnel barrier at the interface. We present room…
An in situ measurement of spin transport in a graphene nonlocal spin valve is used to quantify the spin current absorbed by a small (250 nm $\times$ 750 nm) metallic island. The experiment allows for successive depositions of either Fe or…
Generally the adiabatic quantum pumping phenomenon can be interpreted by the surface integral of the Berry curvature inside the cyclic loop. Spin angular momentum flow without charge current can be pumped out by magnetization precession in…
We investigated spin injection by spin pumping from a spin-injector(NiFe) into a spin-sink to detect spin fluctuations in the spin-sink. By scanning the ordering-temperature of several magnetic transitions, we found that enhanced spin…
The interplay between spin, charge, and orbital degrees of freedom has led to the development of spintronic devices like spin-torque oscillators, spin-logic devices, and spin-transfer torque magnetic random-access memories. In this…
Spin relaxation in graphene is investigated in electrical graphene spin valve devices in the non-local geometry. Ferromagnetic electrodes with in-plane magnetizations inject spins parallel to the graphene layer. They are subject to Hanle…
We investigate spin transport through ferromagnetic graphene vertical heterostructures where a sandwiched tunneling layer is either a normal or ferroelectric insulator. We show that the spin-polarization of the tunneling current is…
The control of spin current is pivotal for spintronic applications, especially for spin-orbit torque devices. Spin Hall effect (SHE) is a prevalent method to generate spin current. However, it is difficult to manipulate its spin…
The magnetic proximity effect can induce a spin dependent exchange shift in the band structure of graphene. This produces a magnetization and a spin polarization of the electron/hole carriers in this material, paving the way for its use as…
We theoretically investigate the spin injection from a ferromagnetic silicene to a normal silicene (FS/NS), where the magnetization in the FS is assumed from the magnetic proximity effect. Based on a silicene lattice model, we demonstrated…
Recent experiments on ferroelectric gating have introduced a novel functionality, i.e. nonvolatility, in graphene field effect transistors. A comprehensive understanding in the non-linear, hysteretic ferroelectric gating and an effective…