Related papers: Field emission in diode and triode vacuum nanostru…
Many nanoelectronic devices rely on thin dielectric barriers through which electrons tunnel. For instance, aluminium oxide barriers are used as Josephson junctions in superconducting electronics. The reproducibility and drift of circuit…
Electrically driven on-chip electron sources that do not need to be heated have been long pursued because the current thermionic electron sources show the problems of high power consumption, slow temporal response, bulky size, etc., but…
Despite their ubiquity in nanoscale electronic devices, the physics of tunnel barriers has not been developed to the extent necessary for the engineering of devices in the few-electron regime. This problem is of urgent interest, as this is…
A simple and robust electrode insulation technique that can withstand a voltage as high as $\mathrm{1000~V}$, which is equivalent to an electric field strength of $\sim 1MV/m$ across a $\mathrm{10~\mu m}$ channel filled with an electrolyte…
We fabricate nanolayer alumina capacitor and apply high electric fields, close to 1 GV/m, to inject charges in the dielectric. Asymmetric charge distributions have been achieved due to the selectivity of the quantum tunneling process.…
We study the electronic properties of dual-gated electron-hole bilayers in which the two layers are separated by a perfectly opaque tunnel barrier. Combining an electrostatic and thermodynamic analysis with mean-field theory estimates of…
A new type of field emission display(FED) based on an edge-enhance electron emission from metal-insulator-semiconductor (MIS) thin film structure is proposed. The electrons produced by an avalanche breakdown in the semiconductor near the…
We investigate the electronic properties of heterostructures based on ultrathin hexagonal boron nitride (h-BN) crystalline layers sandwiched between two layers of graphene as well as other conducting materials (graphite, gold). The tunnel…
Electronic properties of ultrathin dielectric films consistently attract much attention since they play important roles in various electronic devices, such as field effect transistors and memory elements. Insulating properties of the gate…
The short diffusion lengths in insertion battery nanoparticles render the capacitive behavior of bounded diffusion, which is rarely observable with conventional larger particles, now accessible to impedance measurements. Coupled with…
In this study, we regulate adhesion between thin metal films to produce a large-area vacuum nanogap for electron tunneling. Multilayer structures comprising thin metal films with adjustable adhesion were fabricated. The Cu/Ag/Ti/Si…
In this work, we investigate multiphoton and optical-field tunneling emission from metallic surfaces with nanoscale vacuum gaps. Using time-dependent Schrodinger equation (TDSE) simulations, we find that the properties of the emitted…
Recent advancements in nanofabrication have enabled the creation of vacuum electronic devices with nanoscale free space gaps. These nanoelectronic devices promise the benefits of cold-field emission and transport through free-space, such as…
We have studied tunneling of electrons into multi-wall carbon nanotubes. Nanotube/electrode interfaces with low transparency as well as nanotube/nanotube junctions created with atomic force microscope manipulation have been used. The…
Two-dimensional (2D) crystals, such as graphene, hexagonal boron nitride and transitional metal dichalcogenides, have attracted tremendous amount of attention over the past decade due to their extraordinary thermal, electrical and optical…
The cold field electron emission from metallic nanowall array is investigated theoretically. Via conformal mapping method, analytic formulas of tunneling barrier, edge field enhancement factor, transmission coefficient, and area emission…
Recently, new quantum features have been studied in the area of ridged quantum wells (RQW). Periodic ridges on the surface of the quantum well layer impose additional boundary conditions on the electron wave function and reduce the quantum…
Field emission from metals underpinned early vacuum-tube technology, and recent nanoscale engineering made field-emission devices compatible with modern silicon platforms. However, the limited tunability of electron transport in metals has…
The electronic properties of the wormhole and the perturbed nanocylinder will be investigated using two different methods: the continuum gauge field-theory model which deals with the contin- uum approximation of the surface and the Haydock…
We investigate the formation of the one-dimensional channels on the topological surface under the gate electrode. The energy dispersion of these channels is almost linear in the momentum with the velocity sensitively depending on the…