Related papers: Unusual resistance-voltage dependence of nanojunct…
The effect of dc electrical stress and breakdown on Josephson and quasiparticle tunneling in Nb/Al/AlOx/Nb junctions with ultrathin AlOx barriers typical for applications in superconductor digital electronics has been investigated. The…
Current-voltage characteristics of planar junctions formed by an epitaxial c-axis oriented YBa2Cu3O7-x thin film micro-bridge and Ag counter-electrode were measured in the temperature range from 4.2 K to 300 K. A hysteretic behavior related…
Controlled electromigration of gold nanowires of different cross-sectional areas to form nanogap junctions is studied using a feedback method. A linear correlation between the cross sectional area of the gold nanowires and the power…
Using cryogenic scanning tunnelling microscopy and scanning tunnelling spectroscopy we measured single electron tunnelling of isolated Au nanoparticles with 1.4 nm in radius. We observe that a gap {\Delta}V ~ 2e/C (C is the capacitance of…
We find that the dependence on temperature and magnetic field of the electrical resistance of diffusive ferromagnetic nano-wires measured with superconducting electrodes changes drastically with the distance, $L$, between the…
The ferroelectric (FE) control of electronic transport is one of the emerging technologies in oxide heterostructures. Many previous studies in FE tunnel junctions (FTJs) exploited solely the differences in the electrostatic potential across…
Inverse magnetoresistance has been observed in magnetic tunnel junctions with pinhole nanocontacts over a broad temperature range. The tunnel magnetoresistance undergoes a change of sign at higher bias and temperature. This phenomenon is…
We report equilibrium electric resistance R and tunneling spectroscopy dI/dV measurements obtained on single multiwall nanotubes contacted by four metallic Au fingers from above. At low temperature quantum interference phenomena dominate…
Many nanoelectronic devices rely on thin dielectric barriers through which electrons tunnel. For instance, aluminium oxide barriers are used as Josephson junctions in superconducting electronics. The reproducibility and drift of circuit…
We have observed at low temperatures (<8K) hysteretic I(V) characteristics for sub-mkm (~200nm) metallic break-junctions based on the heavy-fermion compound UPd2Al3. Degrading the quality of the contacts by in situ increasing the local…
We fabricate ferromagnetic nanowires with constrictions whose cross section can be reduced gradually from 100 nm to the atomic scale and eventually to the tunneling regime by means of electromigration. These devices are mechanically stable…
Transitions to immeasurably small electrical resistance in thin films of Ag/Au nanostructure-based films have generated significant interest because such transitions can occur even at ambient temperature and pressure. While the zero-bias…
We discuss a recent experiment in which the resistance of a superconducting film has been measured in magnetic field. A strong decrease of the superconducting film resistance has been observed when a metallic gate is placed above the film.…
In conventional magnetic tunnel junctions (MTJs), the tunnel magnetoresistance (TMR) typically increases with barrier thickness as electron transmission in the antiparallel configuration decays faster than that of the parallel…
Stable and switchable polarization of ferroelectric materials opens a possibility to electrically control their functional behavior. A particularly promising approach is to employ ferroelectric tunnel junctions where the polarization…
Metallic nanogranular films display a complex dynamical response to a constant bias, showing up as atypical resistive switching mechanism which could be used to create electrical components for neuromorphic applications. To model such a…
We have investigated metallic break junctions of the heavy-fermion compound UPd2Al3 at low temperatures between 0.1K and 9K and in magnetic fields up to 8T. Both the current-voltage I(V) characteristics and the dV/dI (V) spectra clearly…
Individual metallic single-wall carbon nanotubes show unsual non-Ohmic transport behaviors at high bias fields. For low resistance contact samples, the differential conductance dI/dV increases with increasing bias, reaching a maximum at…
Contact resistance and current crowding are important to nanoscale electrical contacts. In this paper, we present a self-consistent model to characterize partially overlapped parallel contacts with varying specific contact resistivity along…
The metal insulator transition of nano-scaled $VO_2$ devices is drastically different from the smooth transport curves generally reported. The temperature driven transition occurs through a series of resistance jumps ranging over 2 decades…