Related papers: Current driven asymmetric magnetization switching …
We report the control of vertical magnetization shift (VMS) and exchange bias through spin-orbit torque (SOT) in Pt/Co/Ir25Mn75/Co heterostructure device. The exchange bias accompanying with a large relative VMS of about 30 % is observed…
We demonstrate current-induced bipolar switching in in-plane magnetized spin-valve devices that incorporate a perpendicularly magnetized spin polarizing layer. Further, hysteretic transitions into a state with intermediate resistance occur…
Magnetization switching by spin-orbit torque (SOT) via spin Hall effect represents as a competitive alternative to that by spin-transfer torque (STT) used for magnetoresistive random access memory (MRAM), as it does not require high-density…
The reversal of perpendicular magnetization (PM) by electric control is crucial for high-density integration of low-power magnetic random-access memory (MRAM). Although the spin-transfer torque (STT) and spin-orbit torque (SOT) technologies…
Magnetization dynamics in W/CoFeB, CoFeB/Pt and W/CoFeB/Pt multilayers was investigated using spin-orbit-torque ferromagnetic resonance (SOT-FMR) technique. An analytical model based on magnetization dynamics due to SOT was used to fit…
We investigate current-induced magnetization switching for a multilayer structure that allows a reduced switching current while maintaining high thermal stability of the magnetization. The structure consists of a perpendicular polarizer, a…
Spin-orbit interaction (SOI) couples charge and spin transport, enabling electrical control of magnetization. A quintessential example of SOI-induced transport is the anomalous Hall effect (AHE), first observed in 1880, in which an electric…
This study explores the mechanisms of spin-orbit torque (SOT) switching in ferromagnetic semiconductors (FMS) with perpendicular magnetic anisotropy (PMA), emphasizing the impact of symmetry-breaking. Using micromagnetic simulations based…
The synchronized magnetization dynamics in ferromagnets on a nonmagnetic heavy metal caused by the spin Hall effect is investigated theoretically. The direct and inverse spin Hall effects near the ferromagnetic/nonmagnetic interface…
Magnetization reversal in exchange-spring magnet films has been investigated by a First Order Reversal Curve (FORC) technique and vector magnetometry. In Fe/epitaxial-SmCo films, the reversal proceeds by a reversible rotation of the Fe soft…
Magnetic junction is considered which consists of two ferromagnetic metal layers, a thin nonmagnetic spacer in between, and nonmagnetic lead. Theory is developed of a magnetization reversal due to spin injection in the junction.…
The spin-orbit torque device is promising as a candidate for next generation magnetic memory, while the static in-plane field needed to induce deterministic switching is a main obstacle for its application in highly integrated circuits.…
Micromagnetic instabilities and non-uniform magnetization states play a significant role in spin transfer induced switching of nanometer scale magnetic elements. Here we model domain wall mediated switching dynamics in perpendicularly…
We study a high-TC superconducting (YBa2Cu3O7-d) / ferromagnetic (Co/Pt multilayer) hybrid which exhibits resistance switching driven by the magnetic history: depending on the direction of the external field, a pronounced decrease or…
We demonstrate magnetization switching in out-of-plane magnetized Ta\CoFeB\MgO nanowires by current pulse injection along the nanowires, both with and without a constant and uniform magnetic field collinear to the current direction. We…
We solve appropriate drift-diffusion and Landau-Lifshitz-Gilbert equations to demonstrate that unpolarized current flow from a non-magnet into a ferromagnet can produce a precession-type instability of the magnetization. The fundamental…
By studying coupled ferro- (FM) and antiferromagnetic (AFM) thin film systems, we obtain an in-plane magnetic reorientation as a function of temperature and FM film thickness. The interlayer exchange coupling causes a uniaxial anisotropy,…
Ferrimagnetic insulators (FiMI) have been intensively used in microwave and magneto-optical devices as well as spin caloritronics, where their magnetization direction plays a fundamental role on the device performance. The magnetization is…
We report first-principles analysis on the bias dependence of spin-transfer torque (STT) in Fe/MgO/Fe magnetic tunnel junctions. The in-plane STT changes from linear to nonlinear dependence as the bias voltage is increased from zero. The…
We have studied current-driven domain wall motion in modified Ga_0.95Mn_0.05As Hall bar structures with perpendicular anisotropy by using spatially resolved Polar Magneto-Optical Kerr Effect Microscopy and micromagnetic simulation.…