Related papers: Comprehensive and Macrospin-Based Magnetic Tunnel …
Half-metallic Co-based full Heusler alloys have captured considerable attention of the researchers in the realm of spintronic applications, owing to their remarkable characteristics such as exceptionally high spin polarization at Fermi…
Strain-mediated voltage control of magnetization in piezoelectric/ferromagnetic systems is a promising mechanism to implement energy-efficient spintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel…
We demonstrate a simple network-analyzer technique to make quantitative measurements of the bias dependence of spin torque in a magnetic tunnel junction. We apply a microwave current to exert an oscillating spin torque near the…
Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA).…
Accelerometers have widespread applications and are an essential component in many areas such as automotive, consumer electronics and industrial applications. Most commercial accelerometers are based on micro-electromechanical system (MEMS)…
Present information and communication technologies are largely based on electronic devices, which suffer from heat generation and high power consumption. Alternatives like spintronics and magnonics, which harness the spin degree of freedom,…
We demonstrate for the first time that functionally complete digital logic can be created by using three terminal devices each consisting of a magnetic tunnel junction (MTJ) and spin transfer torque (STT) element with a shared free magnetic…
We propose a novel concept of obtaining oscillations with frequencies in very-high frequency (VHF) and ultra-high frequency (UHF) bands. A traditional spin torque nano-oscillator (STNO) consists of at least one pinned layer (PL) and one…
Dynamics of a ferromagnetic macrospin (e.g., a free layer of a magnetic tunnel junction (MTJ)) can be described in terms of equivalent capacitor charge $Q$ and inductor flux $\Phi$, in a manner similar to a standard electric LC circuit, but…
The realistic modeling of STT-MRAM for the simulations of hybrid CMOS/Spintronics devices in comprehensive simulation environments require a full description of stochastic switching processes in state of the art STT-MRAM. Here, we derive an…
Coherent, self-sustained oscillation of magnetization in spin-torque oscillators (STOs) is a promising source for on-chip, nanoscale generation of microwave magnetic fields. Such fields could be used for local excitation of spin-wave…
We propose spin transfer torque--magnetoresistive random access memory (STT-MRAM) based on magneto-resistance and spin transfer torque physics of band-pass spin filtering. Utilizing the electronic analogs of optical phenomena such as…
In this work we investigate the effect of the mechanical stress on the performance of magnetic tunnel junctions (MTJ) with perpendicular magnetic anisotropy. We developed a 4-point bending setup, that allows us to apply a constant stress…
We use micromagnetic simulation to demonstrate layer-selective detection of magnetization directions from magnetic dots having two recording layers by using a spin-torque oscillator (STO) as a read device. This method is based on…
Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a…
Future applications of spin-orbit torque will require new mechanisms to improve the efficiency for switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast, nanosecond scale…
Non-linear dynamics, including auto-oscillations, chaotic dynamics, and synchronization, are integral to physical and biological applications and can be excited in spintronic devices. In this study, we are interested in exploring the…
Many applications in mechanical, acoustic, and electronic engineering require estimating complex dynamical models, often represented as additive multi-input multi-output (MIMO) transfer functions with structural constraints. This paper…
We propose an electrically driven spin injector into normal metals and semiconductors, which is based on a magnetic tunnel junction (MTJ) subjected to a microwave voltage. Efficient functioning of such an injector is provided by…
The concept of Perpendicular Shape-Anisotropy Spin-Transfer-Torque Magnetic Random-Access Memory tackles the downsize scalability limit of conventional ultrathin magnetic tunnel junctions (MTJ) below sub-20 nm technological nodes. This…