Related papers: Electrical properties of Bi-implanted amorphous ch…
Topological insulator (TI) materials are exciting candidates for integration into next-generation memory and logic devices because of their potential for efficient, low-energy-consumption switching of magnetization. Specifically, the family…
The photo-luminescence features of Ge-oxygen defect centers in a 100nm thick Ge-doped silica film on a pure silica substrate were investigated by looking at the emission spectra and time decay detected under synchrotron radiation excitation…
The temperature dependence of the complex optical properties of the three-dimensional topological insulator Bi2Te2Se is reported for light polarized in the a-b planes at ambient pressure, as well as the effects of pressure at room…
Substitution of Sb in FeSb$_2$ by less than 0.5% of Te induces a transition from a correlated semiconductor to an unconventional metal with large effective charge carrier mass $m^*$. Spanning the entire range of the semiconductor-metal…
We report the Se substitution effects on the crystal structure, superconducting properties, and valence states of self-doped BiCh2-based compound CeOBiS2-xSex. Polycrystalline CeOBiS2-xSex samples with x = 0-1.0 were synthesized. For x =…
Point contact conductance measurements on topological $Bi_2Te_2Se$ and $Bi_2Se_3$ films reveal a signature of superconductivity below 2-3 K. In particular, critical current dips and a robust zero bias conductance peak are observed. The…
High $ZT$ value and large Seebeck coefficient have been reported in the nanostructured Fe-doped Si-Ge alloys. In this work, the large Seebeck coefficient in Fe-doped Si-Ge systems is qualitatively reproduced from the computed electronic…
Graphene halfly doped with H or F possesses local magnetization at the undoped C sites. Thus the Seebeck coefficient is different for each spin channel and its sign also changes depending on the spin polarization. Deposition of doped…
Cs2AgBiBr6 (CABB) has been proposed as a promising non-toxic alternative to lead halide perovskites. However, low charge carrier collection efficiencies remain an obstacle for the incorporation of this material in optoelectronic…
Interfacing an organic semiconductor C60 with a non-magnetic metallic thin film (Cu or Pt) has created a novel heterostructure that is ferromagnetic at ambient temperature, while its interface with a magnetic metal (Fe or Co) can tune the…
Thin films of the wide band gap semiconductor $\beta$-Ga$_2$O$_3$ have a high potential for applications in transparent electronics and high power devices. However, the role of interfaces remains to be explored. Here, we report on…
We report a study of high quality pnictide superconductor BaFe$_{1.84}$Co$_{0.16}$As$_2$ thin films using time-domain THz spectroscopy. Near T$_c$ we find evidence for a coherence peak and qualitative agreement with the weak-coupling…
We have measured Andreev reflections between an Au tip and Y_{1-x}Ca_{x}Ba_{2}Cu_{3}O_{7 - \delta} thin films in the in-plane orientation. The conductance spectra are best fitted with a pair potential having the "d_{x^{2}-y^{2}+is"…
We investigate the transport properties of LixCoO2 thin films whose resistivities are nearly an order of magnitude lower than those of the bulk polycrystals. A metal-nonmetal transition occurs at ~0.8 in a biphasic domain, and the Seebeck…
The spin-Seebeck effect mediated thermoelectric energy conversion can provide efficient alternative to traditional thermoelectrics for waste heat recovery. To achieve this goal, efficient spin to charge conversion using earth-abundant…
Thin films of alkali metals when sandwiched at both surfaces by thin metal films loose their conductance. The superconducting proximity effect is used to investigate the change in the alkali film. On the length scale of the film thickness…
We report the effect of pressure on the electrical transport properties of the four-layer-type bismuth chalcogenide semiconductors LaOPbBiS$_{3}$ and La$_{2}$O$_{2}$Bi$_{3}$AgS$_{6}$ and present the discovery of a pressure-induced…
We study the transverse spin-Seebeck effect (SSE) on the surface of a three-dimensional topological insulator (TI) thin film, such as Bi$_2$Se$_3$, which is sandwiched between two normal metal leads. The temperature bias $\Delta T$ applied…
The addition of porosity to thermoelectric materials can significantly increase the figure of merit, ZT, by reducing the thermal conductivity. Unfortunately, porosity is also detrimental to the thermoelectric power factor in the numerator…
Bi2Se3 and Bi2Te3 are layered compounds of technological importance, being excellent thermoelectric materials as well as topological insulators. We report density functional theory calculations of the atomic, electronic and thermoelectric…