Related papers: Tunable Antenna Coupled Intersubband Terahertz Det…
Terahertz (THz) communications, ranging from 100 GHz to 10 THz, are envisioned as a promising technology for 6G and beyond wireless systems. As foundation of designing THz communications, channel modeling and characterization are crucial to…
Terahertz (THz) response of transistor and integrated circuit yields important information about device parameters and has been used for distinguishing between working and defective transistors and circuits. Using a TCAD model for SiGe HBTs…
Graphene field-effect transistors (GFETs) are among the most promising platforms for ultrasensitive chemical and biological sensing due to their high carrier mobility, large surface area, and low intrinsic noise. However, conventional…
Terahertz (THz) wireless communication has emerged as a promising solution for future data center interconnects; however, accurate channel characterization and system-level performance evaluation in complex indoor environments remain…
Low dimensional nano-systems are promising candidates for manipulating, controlling and capturing photons with large sensitivities and low-noise. If quantum engineered to tailor the energy of the localized electrons across the desired…
We demonstrate a high temperature performance quantum detector of Terahertz (THz) radiation based on three-dimensional metamaterial. The metamaterial unit cell consists of an inductor-capacitor (LC) resonator laterally coupled with antenna…
A single photodetector with tunable detection wavelengths and polarization sensitivity can potentially be harnessed for diverse optical applications ranging from imaging and sensing to telecommunications. Such a device will require the…
Dynamic wavelength tunability has long been the holy grail of photodetector technology. Because of its atomic thickness and unique properties, graphene opens up new paradigms to realize this concept, but so far this has been elusive…
Tunable terahertz plasmons are essential for reconfigurable photonics, which have been demonstrated in graphene through gating, though with relatively weak responses. Here, we demonstrate strong terahertz plasmons in graphite thin films via…
Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their…
The ability to tune material properties using gate electric field is at the heart of modern electronic technology. It is also a driving force behind recent advances in two-dimensional systems, such as gate-electric-field induced…
We present an extensive study of resonant two-dimensional (2D) plasmon excitations in grating-gated quantum well heterostructures, which enable an electrical control of periodic charge carrier density profile. Our study combines theoretical…
We present an inverted GaAs 2D electron gas with self-assembled InAs quantum dots in close proximity, with the goal of combining quantum transport with quantum optics experiments. We have grown and characterized several wafers -- using…
We propose and analyze the terahertz (THz) detectors based on a gated graphene p-i-n (GPIN) field-effect transistor (FET) structure. The reverse-biased i-region between the gates plays the role of the electrons and holes injectors…
Production of the High Granularity Timing Detector for the ATLAS experiment at High Luminosity LHC requires over 21000 silicon sensors based on Low Gain Avalanche Diode (LGAD) technology. Their radiation hardness is monitored as a part of…
Ultrafast and sensitive (noise equivalent power <1 nWHz-1/2) light-detection in the Terahertz (THz) frequency range (0.1-10 THz) and at room-temperature is key for applications such as time-resolved THz spectroscopy of gases, complex…
Epitaxially grown InAs NWs are relevant for electrical sensing applications due to Fermi level pinning at NW surface, thus very sensitive to surrounding environment. While a single NW growth batch consists of millions virtually identical…
The unique optoelectronic properties of graphene [1] make it an ideal platform for a variety of photonic applications [2], including fast photodetectors [3], transparent electrodes [4], optical modulators [5], and ultra-fast lasers [6].…
An ultraviolet (UV) photodetector employing the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface as an interdigitated transducer (IDT) is characterized under optical stimulus. The 2DEG-IDT photodetector exhibits a…
We demonstrate a Terahertz photomixer pumped by mid-infrared photons at 10$\mu$m wavelength. The device is based on a dual-antenna architecture, in which a two-dimensional array of mid-infrared patch-antenna resonators is connected to the…