Related papers: Ambipolar quantum dots in intrinsic silicon
We describe important considerations to create top-down fabricated planar quantum dots in silicon, often not discussed in detail in literature. The subtle interplay between intrinsic material properties, interfaces and fabrication processes…
We consider charge qubits based on shallow donor electron states in silicon and coupled quantum dots in GaAs. Specifically, we study the feasibility of P$_2^+$ charge qubits in Si, focusing on single qubit properties in terms of tunnel…
A single electron shared between two levels threaded by a magnetic flux is an irreducibly simple quantum system in which interference is predicted to occur. We demonstrate tuning of the tunnel coupling between two such electronic levels…
We have incorporated an aluminum single electron transistor directly into the defining gate structure of a semiconductor quantum dot, permitting precise measurement of the charge in the dot. Voltage biasing a gate draws charge from a…
Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and quantum information processing. Heavy-holes in both Si and GaAs are promising candidates for all-electrical spin manipulation, owing to the…
We report measurements of the cross-correlation between current noise fluctuations in two capacitively coupled quantum dots in the Coulomb blockade regime. The sign of the cross-spectral density is found to be tunable by gate voltage and…
We study the Coulomb blockade of tunneling through a double quantum dot. The temperature dependence of the linear conductance is strongly affected by the inter-dot tunneling. As the tunneling grows, a crossover from temperature-independent…
Single-layer quantum dot gate potential causes type-II band alignment, i.e. electrostatically confines holes and repels electrons, or vice versa. Hence, the confinement of excitons in gated type II quantum dots involves a delicate balance…
Quantum Hall systems host quasiparticles demonstrating correlated electron physics and non-trivial quantum statistics. Excitonic phases, archetypical for interaction effect, have attracted significant interest in recent years in…
Using renormalization group techniques, we study spectral and transport properties of a spinless interacting quantum dot consisting of two levels coupled to metallic reservoirs. For strong Coulomb repulsion $U$ and an applied Aharonov-Bohm…
We evaluate the spin density oscillations arising in quantum spin Hall quantum dots created via two localized magnetic barriers. The combined presence of magnetic barriers and spin-momentum locking, the hallmark of topological insulators,…
We examine the full counting statistics of quantum dots, which display super-Poissonian shot noise. By an extension to a generic situation with many excited states we identify the underlying transport process. The statistics is a sum of…
A single hole transistor is patterned in a p-Si/SiGe quantum well by applying voltages to nanostructured top gate electrodes. Gating is achieved by oxidizing the etched semiconductor surface and the mesa walls before evaporation of the top…
We review the quantum interference effects in a system of interacting electrons confined to a quantum dot. The review starts with a description of an isolated quantum dot. We discuss the status of the Random Matrix theory (RMT) of the…
In the literature, the study of electron transport in quantum devices is mainly devoted to DC properties. The fluctuations of the electrical current around these DC values, the so-called quantum noise, are much less analyzed. The…
Charge noise in the host semiconductor degrades the performance of spin-qubits and poses an obstacle to control large quantum processors. However, it is challenging to engineer the heterogeneous material stack of gate-defined quantum dots…
We study point-contact tunneling in the integer quantum Hall state of bosons. This symmetry-protected topological state has electrical Hall conductivity equal to $2 e^2/h$ and vanishing thermal Hall conductivity. In contrast to the integer…
We calculate the rates of phonon-assisted hyperfine spin flips during electron and hole tunneling between quantum dots in a self-assembled quantum dot molecule. We show that the hyperfine process dominates over the spin-orbit-induced spin…
The Ohmic conductance and current through two quantum dots in series is investigated for the case of incoherent tunnelling. A generalised master equation is employed to include the discrete nature of the energy levels. Regions of negative…
In this paper, we studied the inter-valley interactions between the orbital functions associated with multi-valley of silicon (Si) quantum dots. Numerical calculations show that the inter-valley coupling between orbital functions increases…