Related papers: Growth of alpha-beta phase W thin films over steep…
We investigate the growth conditions for thin (less than 200 nm) sputtered aluminum (Al) films. These coatings are needed for various applications, e.g. for advanced manufacturing processes in the aerospace industry or for nanostructures…
Superconducting films of alpha-Ta are promising candidates for the fabrication of advanced superconducting qubits. However, alpha-Ta films suffer from many growth-induced structural inadequacies that negatively affect their performance. We…
Thin-film superconductors with thickness 30 to 500 nm are used as non-equilibrium quantum detectors for photons, phonons or more exotic particles. One of the most basic questions in determining their limiting sensitivity is the efficiency…
Superconducting properties of thin films can be vastly different from those of bulk materials. Seminal work has shown the critical temperature Tc of elemental superconductors decreases with decreasing film thickness when the normal-state…
The superconducting Transition-Edge Sensor (TES) is a critical technology for next-generation X-ray spectrometers, known for its exceptional energy resolution. In the last decade, TESs based on AlMn alloy films have been extensively used in…
We present results of a fabrication-process development for the lithographic pattern transfer into the sub-100nm range by combining electron-beam lithography and reactive dry etching to obtain high quality niobium-based light-sensitive…
This paper details the development of high-quality, c-axis oriented AlN thin films up to 2 {\mu}m thick, using sputtering on platinum-coated SOI substrates for use in piezoelectric MEMS. Our comprehensive studies illustrate how important…
We present a detailed thermal and electrical model of superconducting transition edge sensors (TESs) connected to quasiparticle (qp) traps, such as the W TESs connected to Al qp traps used for CDMS (Cryogenic Dark Matter Search) Ge and Si…
We present a dry surface treatment combining atomic layer etching and deposition (ALE and ALD) to mitigate dielectric loss in fully fabricated superconducting quantum devices formed from aluminum thin films on silicon. The treatment,…
We report new experimental studies to understand the physics of phonon sensors which utilize quasiparticle diffusion in thin aluminum films into tungsten transition-edge-sensors (TESs) operated at 35 mK. We show that basic TES physics and a…
We report the uniaxial anisotropic optical constants of Wurtzite type AlN films deposited on Si (100) substrate using DC reactive magnetron sputtering as a function of growth temperature (Ts, 35 to 600 C). Evolution of optical properties…
Large-area deposition of Aluminium-Scandium-Nitride (Al1-xScxN) thin films with higher Sc content (x) remains challenging due to issues such as abnormal orientation growth, stress control, and the undesired crystal phase. These anomalies…
This paper presents progress towards the large-scale manufacturability of piezo- and ferroelectric Al$_{1-x}$Sc$_x$N thin films with very high Sc content. Al$_{0.6}$Sc$_{0.4}$N layers were deposited by reactive sputtering from a 300 mm…
The reference design for the next-generation cosmic microwave background (CMB) experiment, CMB-S4, relies on large arrays of transition edge sensor (TES) bolometers coupled to Superconducting Quantum Interference Device (SQUID)-based…
Transition Edge Sensors (TES) are superconducting microcalorimeters that can be used for single-photon detection with extremely low backgrounds. When they are within their superconducting transition region, small temperature fluctuations -…
Cryogenic characterization of transition-edge sensor (TES) bolometers is a time- and labor-intensive process. As new experiments deploy larger and larger arrays of TES bolometers, the testing process will become more of a bottleneck. Thus…
We have reproducibly grown near-single-domain superconducting aluminum (Al) films on GaAs(111)A wafers using molecular beam epitaxy. Synchrotron X-ray diffraction revealed twin-domain ratios of 0.00005 and 0.0003 for 19.4-nm- and…
Recent experiments have shown the viability of the metamaterial approach to dielectric response engineering for moderately enhancing the transition temperature, Tc, of a superconductor. In this report, we demonstrate the use of Al2O3-coated…
Properties of complex oxide thin films can be tuned over a range of values as a function of mismatch, composition, orientation, and structure. Here, we report a strategy for growing structured epitaxial thermoelectric thin films leading to…
Low-defect-density Ge thin films are critical in Ge based optical devices (optical detectors, LEDs and Lasers) integrated with Si electronic devices for low-cost, highly integrated photonic circuits. In this work, Ge thin films prepared by…