Related papers: Interfacial dead layer effects on current-voltage …
Transition metal oxide hetero-structure has great potential for multifunctional devices. However, the degraded physical properties at interface, known as dead-layer behavior, present a main obstacle for device applications. Here we present…
The magnetic reversal by spin-polarized current of a magnetic junction consisting of two ferromagnetic layers and a nonmagnetic spacer in between is considered. Initially, the free layer is magnetized antiparallel to the pinned layer by an…
Electron transport through fully depleted ferroelectric tunnel barriers sandwiched between two metal electrodes and its dependence on ferroelectric polarization direction are investigated. The model assumes a polarization direction…
The coupling of Josephson oscillations in layered superconductors is studied with help of a tunneling Hamiltonian formalism. The general form of the current density across the barriers between the superconducting layers is derived. The…
Dielectric interfaces are crucial to the behavior of charged membranes, from graphene to synthetic and biological lipid bilayers. Understanding electrolyte behavior near these interfaces remains a challenge, especially in the case of rough…
We study the potential and the charge distribution across the interface of a plasma and a dielectric wall. For this purpose, the charge bound to the wall is modelled as a quasi-stationary electron surface layer which satisfies Poisson's…
Recent studies have shown the potential for bipolar thermoelectricity in superconducting tunnel junctions with asymmetric energy gaps. The thermoelectric performance of these systems is significantly impacted by the inverse proximity…
The charge-memory effect, bistability and switching between charged and neutral states of a molecular junction, as observed in recent STM experiments, is considered within a minimal polaron model. We show that in the case of strong…
The precise positioning of dopants in semiconductors using scanning tunneling microscopes has led to the development of planar dopant-based devices, also known as $\delta$-layers, facilitating the exploration of new concepts in classical…
We present a quantitative study of the current-voltage characteristics (CVC) of SFIFS Josephson junctions (S denotes bulk superconductor, F - metallic ferromagnet, I - insulating barrier) with weak ferromagnetic interlayers in the diffusive…
We study tunneling currents in a model consisting of two non-unitary ferromagnetic spin-triplet superconductors separated by a thin insulating layer. We find a novel interplay between ferromagnetism and superconductivity, manifested in the…
We study tunneling currents in a model consisting of two non-unitary ferromagnetic spin-triplet superconductors separated by a thin insulating layer. We find a novel interplay between ferromagnetism and superconductivity, manifested in the…
Tunneling between opposite surfaces of topological insulator thin film populated by electrons and holes is considered. We predict considerable enhancement of tunneling conductivity by Cooper electron-hole pair fluctuations that are…
The (001) surfaces of polar perovskites BaTiO$_3$ and PbTiO$_3$ have been studied from first principles at T=0 K. For both cases of polarization, the most stable TiO-terminated interfaces show intrinsic ferroelectricity. In the topmost…
Altermagnets can replace ferromagnets in tunnel junctions, yielding large tunneling magnetoresistance, ultrafast switching, and low-power functionality. While most studies explore the linear-response regime, interesting features emerge at…
We show how the partition function of a network of parallel superconducting wires weakly coupled together by the proximity effect, subjected a vector potential along the wires can be mapped onto N-distinguishable two dimensional…
In this paper, we study the domain wall motion induced by vertical current flow in asymmetric magnetic tunnel junctions. The domain wall motion in the free layer is mainly dictated by the current-induced field-like torque acting on it. We…
The Discovery of giant tunnel electroresistance (TER) in Ferroelectric Tunnel Junction (FTJ) paves a futuristic possibility of utilizing the FTJ as a bistable resistive device with an enormously high ON/OFF ratio. In the last 20 years,…
We investigate the polarization switching mechanism in ferroelectric-dielectric (FE-DE) stacks and its dependence on the dielectric thickness (TDE). We fabricate HZO-Al2O3 (FE-DE) stack and experimentally demonstrate a decrease in remnant…
The quantum interference effects induced by the topological phase are studied analytically in biaxial antiferromagnets with an external magnetic field at an arbitrarily angle. This study provides a nontrivial generalization of the Kramers…