Related papers: Semianalytical quantum model for graphene field-ef…
We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric-double-layer transistors to continuously tune the carrier density up to values exceeding 10^{14} cm^{-2}. Whereas in…
We have investigated the transmission in monolayer graphene barrier at nonzero angle of incidence. Taking the influence of parallel wave vector into account, the transmission as the function of incidence energy has a gap due to the…
A new analytical model based on the WKB approximation for MOSFET-like one-dimensional ballistic transistors with Schottky-Barrier contacts has been developed for the drain current. By using a proper approximation of both the Fermi-Dirac…
A tunneling field effect transistor based on armchair graphene nanoribbons is studied using ballistic quantum transport simulation based on 3D real space nonequilibrium Green's function formalism. By introducing a pocket doping region near…
For the growth of emerging graphene field-effect transistor (GFET) technologies, a thorough characterization of on-wafer variability is required. Here, we report for the first time a physics-based compact model, which precisely describes…
Through self-consistent quantum transport simulations, we evaluate the RF performance of monolayer graphene FETs in the bias region of negative output differential resistance. We show that, compared to the region of quasi-saturation, a…
The statistical properties of the carrier density profile of graphene in the ground state in the presence particle-particle interaction and random charged impurity in zero gate voltage has been recently obtained by Najafi \textit{et al.}…
The Schottky barrier of a metal-semiconductor junction is one of the key quantities affecting the charge transport in a transistor. The Schottky barrier height depends on several factors, such as work function difference, local atomic…
We present an electronic transport experiment in graphene where both classical and quantum mechanical charge detector back-action on a quantum dot are investigated. The device consists of two stacked graphene quantum dots separated by a…
We improvise a novel approach to carry out first-principles simulations of graphene-based vertical field effect tunneling transistors that consist of a graphene$|${\it h}-BN$|$graphene multilayer structure. Within the density functional…
Graphene, due to its unique electronic structure favoring high carrier mobility, is considered a promising material for use in high-speed electronic devices in the post-silicon electronic era. For this reason, experimental research on…
Metals are commonly used as electrostatic gates in devices due to their abundant charge carrier densities that are necessary for efficient charging and discharging. A semiconducting gate can be beneficial for certain fabrication processes,…
The stationary Josephson effect in a system of ballistic graphene is studied in the framework of quasiclassical Green's function theory. Reflecting the ultimate two-dimensionality of graphene, a Josephson junction involving a graphene sheet…
We present a theoretical framework for the calculation of charge transport through nanowire-based Schottky-barrier field-effect transistors that is conceptually simple but still captures the relevant physical mechanisms of the transport…
We have fabricated carbon nanotube (CN) field-effect transistors with multiple, individually addressable gate segments. The devices exhibit markedly different transistor characteristics when switched using gate segments controlling the…
In this report we experimentally probe the non-equilibrium breakdown of the quantum Hall state in monolayer graphene by injecting a high current density ($\sim$1A/m). The measured critical currents for dissipationless transport in the…
In this paper, we present a mode space method for atomistic non-equilibrium Green's function simulations of armchair graphene nanoribbon FETs that includes electron-phonon scattering. With reference to both conventional and tunnel FET…
The two-dimensional transition metal dichalcogenides (TMDs) have been proposed as candidates for the channel material in future field effect transistor designs. The heterophase design which utilizes the metallic T- or T' phase of the TMD as…
By using four layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type of structure very promising for potential applications. An…
The presence of finite bandgap and high mobility in semiconductor few-layer black phosphorus offers an attractive prospect for using this material in future two-dimensional electronic devices. Here we demonstrate for the first time fully…