Related papers: Surface-to-bulk scattering in topological insulato…
Topological insulators are guaranteed to support metallic surface states on an insulating bulk, and one should thus expect that the electronic transport in these materials is dominated by the surfaces states. Alas, due to the high remaining…
Recently it has been shown that surface plasmons supported by an interface between a 3+1 dimensional topological insulator and a metal or between a 3+1 dimensional topological insulator with residual bulk charge carriers and vacuum have a…
Topological insulators represent a novel state of matter with surface charge carriers having a massless Dirac dispersion and locked helical spin polarization. Many exciting experiments have been proposed by theory, yet, their execution have…
The quasiparticle interference of the spectroscopic imaging scanning tunneling microscopy has been investigated for the surface states of the large gap topological insulator Bi$_2$Te$_3$ through the T-matrix formalism. Both the scalar…
A topological insulator (TI), a new quantum state featured with the topologically-protected surface state (TSS) originating from its peculiar topology in band structure, has attracted much interest due to academic and practical importance.…
The discovery of topological phases has introduced a new dimension to materials science. Three-dimensional (3D) topological insulators (TIs) are a remarkable class of matter that is insulating in the bulk while hosting conductive…
Ultrafast carrier relaxation in the 2D topological insulator (TI) Bi2Se3 [gapped Dirac surface states (SS)] and how it inherits ultrafast relaxation in the 3D TI Bi2Se3 (gapless Dirac SS) remains a challenge for developing new…
We consider the coupling of bulk space-time-structured waves, such as spatiotemporal vortex pulses (STVPs), to surface waves, such as surface plasmon-polaritons (SPPs). For resonant coupling that preserves the frequency and tangent…
We report on the effect of exposure to atmospheric conditions on the THz conductivity of thin films of the topological insulator Bi$_2$Se$_3$. We find: 1) two contributions of mobile charge carriers to the THz conductivity immediately after…
We present a theoretical study of electron-phonon scattering effects in thin films made of a strong topological insulator. Phonons are modelled by isotropic elastic continuum theory with stress-free boundary conditions, and the interaction…
In an ideal 3D topological insulator (TI), the bulk is insulating and the surface conducting due to the existence of metallic states that are localized on the surface; these are the topological surface states. Quaternary Bi-based compounds…
We explore the phonon dynamics of thin films of the topological insulator material Bi2Se2Te using ultrafast pump-probe spectroscopy. The time resolved differential reflectivity of the films exhibit fast and slow oscillations. We have given…
In the three-dimensional topological insulator (TI), the physics of doped semiconductors exists literally side-by-side with the physics of ultra-relativistic Dirac fermions. This unusual pairing creates a novel playground for studying the…
Topological insulators (TIs) are novel materials that manifest spin-polarized Dirac states on their surfaces or at interfaces made with conventional matter. We have measured the electron kinetics of bulk doped TI Bi$_2$Se$_3$ with angle…
Topological insulators (TI) have attracted extensive research effort due to their insulating bulk states but conducting surface states. However, investigation and understanding of thermal transport in topological insulators, particularly…
Topological insulators (TIs) are materials that have a bulk electronic band gap like an ordinary insulator but have protected conducting states on their surface. One of the most interesting properties of TIs is their spin helicity, whereby…
The dynamics of itinerant electrons in topological insulator (TI) thin films is investigated using a multi-band decomposition approach. We show that the electron trajectory in the 2D film is anisotropic and confined within a characteristic…
By combining $n$-type $\mathrm{Bi_2Te_3}$ and $p$-type $\mathrm{Sb_2Te_3}$ topological insulators, vertically stacked $p$-$n$ junctions can be formed, allowing to position the Fermi level into the bulk band gap and also tune between $n$-…
The surface states of intrinsic higher order topological phases are protected by the spatial symmetries of a finite sample. This property makes the existing scattering theory of topological invariants inapplicable because the scattering…
Ab initio electronic structure calculations based on density functional theory and tight-binding methods for the thermoelectric properties of p-type Sb$_2$Te$_3$ films are presented. The thickness-dependent electrical conductivity and the…