Related papers: Tailoring between network rigidity and nanosecond …
In this article, we report the first observation of nanosecond laser induced transient dual absorption bands, one in the bandgap (TA1) and another in the sub-bandgap (TA2) regions of a-Ge5As30Se65 thin films. Strikingly, these bands are…
In this paper, we present interesting results on the quantification of photodarkening (PD), photobleaching (PB) and transient PD (TPD) in a- GexAs35-xSe65 thin films as a function of network rigidity. Composition dependent light-induced…
Little is known about the role of network rigidity in light-induced structural rearrangements in network glasses due to a lack of supporting experiments and theories. In this report, we demonstrate for the first time the ultrafast…
Transient absorption (TA) is the most widespread method to follow ultrafast dynamics in molecules and materials. The related method of TA anisotropy (TAA) reports on the ultrafast reorientation dynamics of transition dipole moments,…
Nanosecond near resonant excitation in As50S50 thin films leads to strong nonlinear optical response, i.e. nonlinear absorption coefficient up to 4 x 106 cm/GW and nonlinear refractive index of 8.5 cm2/GW, both of which is the strongest…
Few-layer GaSe is one of the latest additions to the family of 2D semiconducting crystals whose properties under strain are still relatively unexplored. Here, we study rippled nanosheets that exhibit a periodic compressive and tensile…
Using an approximate time-dependent density functional theory method, we calculate the absorption and luminescence spectra for hydrogen passivated silicon nanoscale structures with large aspect ratio. The effect of electron confinement in…
When two sheets of graphene stack in a twisted bilayer graphene (tBLG) configuration, the resulting constrained overlap between interplanar 2p orbitals produce angle-tunable electronic absorption resonances. Using a novel combination of…
Combining the capabilities of gate defined quantum transport devices in GaAs-based heterostructures and of optically addressed self-assembled quantum dots could open broad perspectives for new devices and functionalities. For example,…
We control the thickness of GaSe on the level of individual layers and study the corresponding optical absorption via highly sensitive differential transmission measurements. Suppression of excitonic transitions is observed when the number…
Recent measurements have shown that a continuously tunable bandgap of up to 250 meV can be generated in biased bilayer graphene [Y. Zhang et al., Nature 459, 820 (2009)], opening up pathway for possible graphene-based nanoelectronic and…
Ultrathin plasmonic films that approach the trans-dimensional (TD) thickness limit provide a promising route for light_matter interaction control and manipulation, yet their nonlinear optical response near the epsilon_near_zero (ENZ)…
The discovery of superconductivity in the bulk nickelates under high pressure is a major advance in physics. The recent observation of superconductivity at ambient pressure in compressively strained bilayer nickelate thin films has now…
We present a combined study with conventional far-infrared and time-domain terahertz ellipsometry of the temperature dependent optical response of SrTiO3 thin films (85 and 8.5 nm) that are grown by pulsed-laser deposition on LSAT…
We report lasing of moir\'e trapped interlayer excitons (IXs) by integrating a pristine hBN-encapsulated MoSe$_2$/WSe$_2$ heterobilayer into a high-$Q$ ($>10^4$) nanophotonic cavity. We control the cavity-IX detuning using a magnetic field…
Stacking bilayer structures is an efficient way to tune the topology of polaritons in in-plane anisotropic films, e.g., by leveraging the twist angle (TA). However, the effect of another geometric parameter, film thickness ratio (TR), on…
The superconducting-insulator transition is simulated in disordered networks of Josephson junctions with thermally activated Arrhenius-like resistive shunt. By solving the conductance matrix of the network, the transition is reproduced in…
Thin films of silicon oxide (SiOx) are mixtures of semiconductive c-Si nanoclusters (NC) embedded in an insulating g-SiO2 matrix. Tour et al. have shown that a trenched thin film geometry enables the NC to form semiconductive filamentary…
We present a theoretical analysis of the effects of short range surface plasmon polariton excitation on sub-wavelength bridges in metal gratings. We show that localized resonances in thin metal bridges placed within the slit of a…
Reduced transmon qubit $T_1$ coherence times have been linked to the amorphous oxide layers formed by thin film capacitors during processing. Because Ta or Ta capped Nb capacitors exhibit overall superior qubit performance to those…