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Related papers: Native point defects in few-layer phosphorene

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Combining both vertical and in-plane two-dimensional (2D) heterostructures opens up the possibility to create an unprecedented architecture using 2D atomic layer building blocks. The thermal transport properties of such mixed…

Materials Science · Physics 2020-07-16 Ting Liang , Ping Zhang , Man Zhou , Peng Yuan , Daoguo Yang

Understanding the coupling of graphene with its local environment is critical to be able to integrate it in tomorrow's electronic devices. Here we show how the presence of a metallic substrate affects the properties of an atomically…

Mesoscale and Nanoscale Physics · Physics 2015-05-27 M. M. Ugeda , D. Fernández-Torre , I. Brihuega , P. Pou , A. J. Martínez-Galera , R. Pérez , J. M. Gómez-Rodríguez

Bulk black phosphorus (BP) consists of puckered layers of phosphorus atoms. Few-layer BP, obtained from bulk BP by exfoliation, is an emerging candidate as a channel material in post-silicon electronics. A deep understanding of its physical…

Using density functional theory, we calculated the formation energy of native point defects (vacancies, interstitials and antisites) in MAX phase $Ti_2GeC$ and $Ti_3GeC_2$ compounds. Ge vacancy with formation energy of 2.87 eV was the most…

Materials Science · Physics 2019-04-09 M. H. N. Assadi , H. Katayama-Yoshida

Hydrogen segregation to vacancies in the surface and subsurface layers of (111) and (100) surfaces of Pd is studied in the density functional theory (DFT) approach. Adsorption energies and configurations of various clusters of H atoms at…

Materials Science · Physics 2020-06-24 A. V. Subashiev , H. H. Nee

The diffusion of intrinsic defects in 3C-SiC is studied using an ab initio method based on density functional theory. The vacancies are shown to migrate on their own sublattice. The carbon split-interstitials and the two relevant silicon…

Materials Science · Physics 2009-11-10 Michel Bockstedte , Alexander Mattausch , Oleg Pankratov

Graphene exhibits promise as a plasmonic material with high mode confinement that could enable efficient hot carrier extraction. We investigate the lifetimes and mean free paths of energetic carriers in free-standing graphene, graphite and…

Materials Science · Physics 2016-12-28 Prineha Narang , Litao Zhao , Steven Claybrook , Ravishankar Sundararaman

A rigorous understanding of the thermodynamic properties of point defects, namely vacancies and self-interstitials, is crucial for the discovery and screening of structural materials in clean energy applications. In this work, we extend a…

Materials Science · Physics 2026-03-10 Jacob Jeffries , Hyunsoo Lee , Anter El-Azab , Enrique Martinez

As a way to further improve the electronic properties of group V layered semiconductors, we propose to form in-layer 2D heterostructures of black phosphorus and grey arsenic. We use \textit{ab initio} density functional theory to optimize…

Mesoscale and Nanoscale Physics · Physics 2015-10-28 Zhen Zhu , Jie Guan , David Tomanek

We have carried out ab initio electronic structure calculations on graphane (hydrogenated graphene) with single and double vacancy defects. Our analysis of the density of states reveal that such vacancies induce the mid gap states and…

Materials Science · Physics 2010-02-11 Bhalchandra S. Pujari , D. G. Kanhere

Phosphorene, a puckered two-dimensional allotrope of phosphorus, has sparked considerable interest in recent years due to its potential especially for optoelectronic applications with its layer-number-dependant direct band gap and strongly…

The electronic properties of polycrystalline lead oxide consisting of a network of single-crystalline $\alpha$-PbO platelets and the formation of the native point defects in $\alpha$-PbO crystal lattice are studied using first principles…

Materials Science · Physics 2015-06-11 J. Berashevich , O. Semeniuk , O. Rubel , J. A. Rowlands , A. Reznik

Van der Waals heterostructures give access to a wide variety of new phenomena that emerge thanks to the combination of properties brought in by the constituent layered materials. We show here that owing to an enhanced interaction cross…

The nanoscale resistive switching characteristics of gallium phosphide (GaP) thin films directly grown on Si are investigated as a function of incident light. Firstly, as-grown GaP films show a high RON/ROFF (~10^4), shown to arise from the…

Materials Science · Physics 2021-01-19 Fran Kurnia , Jan Seidel , Judy N. Hart , Nagarajan Valanoor

In this letter, we show that a new class of two-dimensional phosphorus allotropes can be constructed via assembling the previously proposed ultrathin metastable phosphorus nanotube into planar structures in different stacking orientations.…

Materials Science · Physics 2018-05-02 Zhenqing Li , Chaoyu He , Tao Ouyang , Chunxiao Zhang , Cao Tang , Rudolf A. Romer , Jianxin Zhong

The intrinsic carrier transport dynamics in phosphorene is theoretically examined. Utilizing a density functional theory treatment, the low-field mobility and the saturation velocity are characterized for both electrons and holes in the…

Mesoscale and Nanoscale Physics · Physics 2016-08-24 Zhenghe Jin , Jeffrey T. Mullen , Ki Wook Kim

Defects are inevitably present in two-dimensional (2D) materials and usually govern their various properties. Here a comprehensive density functional theory-based investigation of 7 kinds of point defects in a recently produced {\gamma}…

Materials Science · Physics 2021-03-15 Andrey A. Kistanov , Vladimir R. Nikitenko , Oleg V. Prezhdo

We use density functional theory (DFT) to explore the physical properties of an $Er_{ W}$ point defect in monolayer $WS_{ 2}$. Our calculations indicate that electrons localize at the dangling bonds associated with a tungsten vacancy…

An increasing number of theoretical calculations on few-layer materials have been reporting a non-zero sound velocity for all three acoustic phonon modes. In contrast with these reports, here we show that the lowest phonon dispersion branch…

Materials Science · Physics 2017-02-06 Jesús Carrete , Wu Li , Lucas Lindsay , David A. Broido , Luis J. Gallego , Natalio Mingo

Intrinsic defects govern carrier trapping and recombination in two-dimensional semiconductors, yet the microscopic origin of defect-dependent capture dynamics remains unclear. Here, we compute carrier capture coefficients of vacancy…

Strongly Correlated Electrons · Physics 2026-05-08 Srest Somay , Sitangshu Bhattacharya , Krishna Balasubramanian
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