Related papers: Mottness in a doped organic superconductor
By means of magnetization, specific heat and muon-spin relaxation measurements, we investigate high-pressure oxidized \mohpo, in which overdoping is achieved up to $p \sim 0.45$ hole/Cu, well beyond the $T_c - p$ superconducting dome of…
Transport of charge carriers can be controlled by doping through chemical and physical means. Unlike chemical doping, physical doping is carried out by a special technique through gate voltages in a field-effect transistor geometry. This…
Mechanism of superconductivity (SC) in a purely interacting electron system has been one of the most challenging issues in condensed matter physics. In the BCS theory, the Landau's Fermi liquid is a normal state against which an SC…
We demonstrate in a simple model the surprising result that turning on an on-site Coulomb interaction U in a doped band insulator leads to the formation of a half-metallic state. In the undoped system, we show that increasing U leads to a…
High temperature superconductivity in cuprates arises from doping a parent Mott insulator by electrons or holes. A central issue is how the Mott gap evolves and the low-energy states emerge with doping. Here we report angle-resolved…
We study by the Gutzwiller approximation the melting of the valence bond crystal phase of a bilayer Hubbard model at sufficiently large inter-layer hopping. We find that a superconducting domain, with order parameter $d_{z^2-r^2}$, $z$…
Mott insulators form because of strong electron repulsions, being at the heart of strongly correlated electron physics. Conventionally these are understood as classical "traffic jams" of electrons described by a short-ranged entangled…
Electric double layer transistor configurations have been employed to electrostatically dope single crystals of insulating SrTiO_{3}. Here we report on the results of such doping over broad ranges of temperature and carrier concentration…
We investigate the evolution of the Mott insulators in the triangular lattice Hubbard Model, as a function of hole doping $\delta$ in both the strong and intermediate coupling limits. Using the advanced density matrix renormalization group…
We elucidate the mechanism by which a Mott insulator transforms into a non-Fermi liquid metal upon increasing disorder at half filling. By correlating maps of the local density of states, the local magnetization and the local bond…
We study transient dynamics of hole carriers injected at a certain time into a Mott insulator with antiferromagnetic long range order. This is termed ``dynamical hole doping" as contrast with chemical hole doping. Theoretical framework for…
We use quantum Monte Carlo and exact diagonalization calculations to study the Mott-insulator to superconductor quantum phase transition in a two-dimensional fermionic Hubbard model with attractive interactions in the presence of a…
Interest in many strongly spin-orbit coupled 5d-transition metal oxide insulators stems from mapping their electronic structures to a J=1/2 Mott phase. One of the hopes is to establish their Mott parent states and explore these systems'…
Nitrogen vacancy doped SmN$_{1-\delta}$ is a semiconductor which lies in the intermediary between insulating-ferromagnetic SmN and metallic-anti-ferromagnetic Sm. The dopant electrons resulting from nitrogen vacancies have recently been…
Following the direct observation of abrupt changes in the superconducting ground state in doped low dimensional antiferromagnets, we have identified a phase transition where superconductivity is optimal. The experiments indicate the…
The magnetic field-induced superconductor-insulator-metal transition (SIMT) in partially deuterated $\kappa$-(BEDT-TTF)$_2$Cu[N(CN)$_2$]Br, which is just on the Mott boundary, has been observed using the infrared magneto-optical imaging…
Cooperation and competition between the antiferromagnetic, d-wave superconducting and Mott-insulating states are explored for the two-dimensional Hubbard model including nearest and next-nearest-neighbor hoppings at zero temperature. Using…
The transport properties of nanostructured systems are deeply affected by the geometry of the effective connections to metallic leads. In this work we derive a conductance expression for interacting systems whose connectivity geometries do…
The understanding of the interplay between different orders in a solid is a key challenge in highly correlated electronic systems. In real systems this is even more difficult since disorder can have a strong influence on the subtle balance…
Identification of the electronic state that appears upon doping a Mott insulator is important to understand the physics of cuprate high-temperature superconductors. Recent scanning tunneling microscopy of cuprates provides evidence that a…