Related papers: Au-Gated SrTiO3 Field-Effect Transistors with Larg…
Recently demonstrated metal-semiconductor heterojunctions with few-atom thickness show their promise as 2D Schottky contacts for future integrated circuits and nanoelectronics. The theory for 3D Schottky contacts, however, fails on these…
The magneto-optical activity of high quality transparent thin films of insulating EuTiO3 (ETO) deposited on a thin SrTiO3 (STO) substrate with both being non-magnetic materials are demonstrated to be a versatile tool for light modulation.…
The modulus spectra of organic field-effect transistors (OFETs) with electrode overlap and peripheral regions have been experimentally and theoretically investigated. The complex impedance of regioregular poly(3-hexylthiophene-2,5-diyl)…
The study of subtle effects on transport in semiconductors requires high-quality epitaxial structures with low defect density. Using hybrid molecular beam epitaxy (MBE), SrTiO$_3$ films with low-temperature mobility exceeding 42,000…
This work demonstrates quasi-vertical beta-Ga2O3 Schottky barrier diodes (SBDs) fabricated on c-plane sapphire using an all-LPCVD, plasma-free process integrating epitaxial growth of high-quality beta-Ga2O3 and in-situ Ga-assisted etching.…
Using DFT calculations, we investigate the effects of the type, location, and density of point defects in monolayer MoS2 on electronic structures and Schottky barrier heights (SBH) of Au/MoS2 heterojunction. Three types of point defects in…
The heat transport in heavy-doped n-GaAs has been investigated at temperatures T=300 K and 77 K using the irradiation of the metal-semiconductor contact by modulated CO_{2}-laser radiation. It is shown this approach giving an opportunity to…
Atomically thin semiconducting MoS2 is of great interest for high-performance flexible electronic and optoelectronic devices. Initial measurements using back-gated field-effect transistor (FET) structures on SiO2 yielded mobility of 1-50…
In this article, a novel two-path model is proposed to quantitatively explain sub-threshold characteristics of back-gated Schottky barrier FETs (SB-FETs) from 2D channel materials. The model integrates the 'conventional' model for SB-FETs…
Schottky barrier height and the ideality factor $\eta$ are established for the first time in the single phase (Ga,Mn)N using a vertical geometry device. The material has been heteroepitaxially grown on commercially available low threading…
In this study, we grow FeSe/SrTiO$_{3}$ with thicknesses of 4-19 nm using pulsed laser deposition and investigate their magneto-transport properties. The thinnest film (4 nm) exhibit negative Hall effect, indicating electron transfer into…
Van der Waals heterostructures are the ideal material platform for tunnel field effect transistors (TFETs) because a band-to-band tunneling (BTBT) dominant current is feasible at room temperature (RT) due to ideal, dangling bond free…
An atomistic insight into potential barrier formation and band bending at the interface between a metal and an n-type semiconductor is achieved by ab initio simulations and model analysis of a prototype Schottky diode, i.e., niobium doped…
We report the fabrication of both n-type and p-type WSe2 field effect transistors with hexagonal boron nitride passivated channels and ionic-liquid (IL)-gated graphene contacts. Our transport measurements reveal intrinsic channel properties…
For high-electron-mobility transistors based on two-dimensional electron gas (2DEG) within a quantum well, such as those based on AlGaN/GaN heterostructure, a Schottky-gate is used to maximize the amount of charge that can be induced and…
The correlated electron system SmNiO3 exhibits a metal-insulator phase transition at 130 {\deg}C. Using an ionic liquid as an electric double layer (EDL) gate on three-terminal ultrathin SmNiO3 devices, we investigate gate control of the…
Non-crystalline thin-film Schottky diodes are cost-effective but often exhibit unreliable electrical characteristics due to material imperfections. In this work, I present a Schottky diode structure utilizing in-situ grown Ta2O5 and ZnO…
This letter evaluates temporal and thermal stability of a state-of-the-art few-layer phosphorene MOSFET with Al2O3 surface passivation and Ti/Au top gate. As fabricated, the phosphorene MOSFET was stable in atmosphere for at least 100 h.…
The electrical behavior of Ni Schottky barrier formed onto heavily doped (ND>1019 cm-3) n-type phosphorous implanted silicon carbide (4H-SiC) was investigated, with a focus on the current transport mechanisms in both forward and reverse…
High-k oxides such as SrTiO3 promise large capacitance, but their dielectric response is often limited by leakage currents due to reduced bandgaps. We show that introducing a thin barrier layer beneath SrTiO3 is a simple and effective way…