Related papers: Revisit the spin-FET: Multiple reflections, inelas…
Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high…
In this paper, we demonstrate by simulation the general usability of an electrostatically doped and electrically reconfigurable planar field-effect transistor (FET) structure. The device concept is partly based on our already published and…
We review our recent work on the simulation, description and prediction of spin-excitations in adatoms and dimers deposited on metallic surfaces. This work done together with Douglas L. Mills, is an extension of his seminal contribution…
We report the first experimental demonstration that interface microstructure limits diffusive electrical spin injection efficiency across heteroepitaxial interfaces. A theoretical treatment shows that the suppression of spin injection due…
A model of the Datta-Das spin field-effect transistor is presented which, in addition to the Rashba interaction, takes into account the influence of bulk inversion asymmetry of zinc-blende semiconductors. In the presence of bulk inversion…
We study a ballistic spin field-effect transistor (SFET) with special attention to the issue of multi-channel effects. The conductance modulation of the SFET as a function of the Rashba spin-orbit coupling strength is numerically examined…
Theoretical foundations and applications of the generalized spin-fermion (sp-d) exchange lattice model to various magnetic systems, e.g. rare-earth metals and compounds and magnetic semiconductors are discussed. The capabilities of the…
The spin-1 Ising model with bilinear and biquadratic exchange interactions and single-ion crystal field is solved on the Bethe lattice using exact recursion equations. The general procedure of critical properties investigation is discussed…
The influence of spin-orbit coupling in two-dimensional systems is investigated within the framework of the Landauer-Buettiker coherent scattering formalism. This formalism usually deals with spin-independent stationary states and,…
A quantum theory of the spin-dependent scattering of semiconductor electrons by a Schottky barrier at an interface with a ferromagnet is presented. The reflection of unpolarized non-equilibrium carriers produces spontaneous…
Multisite interaction spin-S models in an external magnetic field are studied recursively on the Bethe-like lattices. The transfer-matrix method is extended to calculate exactly the two-spin correlation functions. The exact expressions for…
Recent research discovered that charge transfer processes in chiral molecules can be spin selective and named the effect chiral-induced spin selectivity (CISS). Follow-up work studied hybrid spintronic devices with conventional electronic…
Reflection and transmission of electrons scattered by a rectangular potential step in the presence of an external magnetic field parallel to the electron beam is described with the use of the Dirac equation. It is shown that in addition to…
We consider a two-channel spin transistor with weak spin-orbit induced interband coupling. We show that the coherent transfer of carriers between the coupled channels gives rise to an \textit{additional} spin rotation. We calculate the…
The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor…
Taking into account both the Jahn-Teller lattice distortion and the on-site electronic potential fluctuations in the orbital-degenerated double-exchange model, in which both the core-spin and the lattice distortion are treated classically,…
The one-dimensional Ising model with its connections to several physical concepts plays a vital role in comprehension of several principles, phenomena and numerical methods. The Hamiltonian of a coupled one-dimensional dissipative spin…
Building upon the worldline effective field theory (EFT) formalism for spinning bodies developed for the Post-Newtonian regime, we generalize the EFT approach to Post-Minkowskian (PM) dynamics to include rotational degrees of freedom in a…
The gate-controlled electron spin interference was observed in nanolithographically defined square loop (SL) arrays fabricated using In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As quantum wells. In this…
We propose, theoretically, a new type of quantum field effect transistor that operates purely on the flow of spin current in the absence of charge current. This spin field effect transistor (SFET) is constructed without any magnetic…