Related papers: Room temperature multiferroicity in orthorhombic L…
The crystal and magnetic structures of single-crystalline hexagonal LuFeO$_3$ films have been studied using x-ray, electron and neutron diffraction methods. The polar structure of these films are found to persist up to 1050 K; and the…
We present direct evidence of above room temperature magneto-electricity in single-phase Li0.05Ti0.02Ni0.93O with above-ambient antiferromagnetic ordering. Temperature-hysteresis in warming/cooling heat-flow thermograms establishes a…
Magnetoelectric mutual control in multiferroics, which is the electric control of magnetization, or reciprocally the magnetic control of polarization has attracted much attention because of its possible applications to spintronic devices,…
Multiferroic materials, in which ferroelectric and magnetic ordering coexist, are of fundamental interest for the development of multi-state memory devices that allow for electrical writing and non-destructive magnetic read-out operation.…
The magnetic and transport properties of BiFeO3/La2NiMnO6 (BFO/LNMO) composite have been investigated both experimentally and theoretically. Unlike the normal rhombohedral (R3c) phase, BFO in the composites is crystallized in the triclinic…
Magnetic dc susceptibility between 1.5 and 800 K, ac susceptibility and magnetization, thermodynamic properties, temperature dependence of radio and audio-wave dielectric constants and conductivity, contact-free dielectric constants at…
We report for the first time, that Fe3Se4 is a room temperature, type-II multiferroic with magnetoelectric coupling. We observed the coexistence of coupled ferrimagnetic and ferroelectric ordering in Fe3Se4nanorods well above room…
Apart from being so far the only known binary multiferroic compound, CuO has a much higher transition temperature into the multiferroic state, 230 K, than any other known material in which the electric polarization is induced by spontaneous…
We demonstrate that small but finite ferroelectric polarization ($\sim$0.01 $\mu$C/cm$^2$) emerges in orthorhombic LuFeO$_3$ ($Pnma$) at $T_N$ ($\sim$600 K) because of commensurate (k = 0) and collinear magnetic structure. The synchrotron…
Multiferroic materials have attracted much interest due to the unusual coexistence of ferroelectric and (anti-)ferromagnetic ground states in a single compound. They offer an exciting platform for new physics and potentially novel devices.…
Electrical tuning of magnetism is crucial for developing fast, compact, ultra-low power electronic devices. Multiferroics offer significant potential due to their ability to control magnetic via an electric field through magnetoelectric…
We have measured the dielectric constant and the pyroelectric current of orthorhombic (space group $Pbam$) NdCrTiO$_5$ polycrystalline samples. The dielectric constant and the pyroelectric current show features associated with ferroelectric…
Magnetically induced ferroelectrics in multiferroics provide an optimal approach to pursuit intrinsically strong magnetoelectricity. However, the complex antiferromagnetism, faint magnetically induced polarization, and low working…
Multiferroic materials open up the possibility to design novel functionality in electronic devices, with low energy consumption. However, there are very few materials that show multiferroicity at room temperature, which is essential to be…
Dielectric and magnetic properties of Eu0.5Ba0.25Sr0.25TiO3 are investigated between 10 K and 300 K in the frequency range from 10 Hz to 100 THz. A peak in permittivity revealed near 130 K and observed ferroelectric hysteresis loops prove…
Room-temperature magnetoelectric multiferroicity has been observed in c-axis oriented GaFeO$_3$ thin films (space group $Pna2_1$), grown on economic and technologically important (100)Si substrates by pulsed laser deposition technique.…
Using the results of x-ray and neutron diffraction experiments, we show that the ferroelectric polarization, in ~22 nm particles of BiFeO3, exhibits a jump by ~30% around the magnetic transition point T_N (~635 K) and a suppression by ~7%…
The promise of a strong magnetoelectric coupling in a multiferroic material is not only of fundamental interest, but also forms the basis of next generation memory devices where the direction of magnetization can be reversed by an external…
Artificial multiferroics consist of two types of ferroic materials, typically a ferroelectric and ferromagnet, often coupled interfacially by magnetostriction induced by the lattice elongations in the ferroelectric. In BaTiO3 the magnitude…
The orthovanadate DyVO3 crystal, known to exhibit multiple structural, spin and orbital ordering transitions, is presently investigated on the basis of magnetization, heat capacity, resistivity, dielectric and polarization measurements. Our…