Related papers: Near field thermal memory device
In this work, we propose a near-field radiative thermal transistor made of two graphene-covered silicon carbide (SiC) plates separated by a nanometer vacuum gap. Thick SiC plates serve as the thermal "source" and "drain", while graphene…
The radiative heat transfer in the extreme near-field regime, i.e. for distances below 10 nm, remains poorly understood. There are competing experimental results in this regime, with some in good agreement with theoretical predictions,…
Heat radiation and near-field radiative heat transfer can be strongly manipulated by adjusting geometrical shapes, optical properties, or the relative positions of the objects involved. Typically these objects are considered as embedded in…
A parametric study of Drude and Lorentz models performances in maximizing near-field radiative heat transfer between two semi-infinite planes separated by nanometric distances at room temperature is presented in this paper. Optimal…
The thermal radiative near field transport between vanadium dioxide and silicon oxide at submicron distances is expected to exhibit a strong dependence on the state of vanadium dioxide which undergoes a metal-insulator transition near room…
Thermophotovoltaics, devices that convert thermal infrared photons to electricity, offer a key pathway for a variety of critical renewable energy technologies including thermal energy storage, waste heat recovery, and direct solar-thermal…
Thin films of VO$_2$ on different substrates, Al$_2$O$_3$ and SiO$_2$/Si, have been prepared and characterized from room temperature up to 360 K. From the band structure in the rutile metallic phase and in the monoclinic insulating phase…
Enhancing the switching speed of oxide-based memristive devices at a low voltage level is crucial for their use as non-volatile memory and their integration into emerging computing paradigms such as neuromorphic computing. Efforts to…
Amorphous vanadium dioxide (VO$_{2}$) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 ${\deg}$C for 1-2 hours under a low oxygen pressure (10$^{-4}$ to 10$^{-5}$ Torr). Under these…
Memory effects during metal-insulator transitions in quantum materials reveal complex physics and potential for novel electronics mimicking biological neural systems. Nonetheless, understanding of memory and nonlinearity in sequential…
We present a comprehensive theoretical study of the magnetic field dependence of the near-field radiative heat transfer (NFRHT) between two parallel plates. We show that when the plates are made of doped semiconductors, the near-field…
The control of heat flow is a formidable challenge due to lack of good thermal insulators. Promising new oppor-tunities for heat flow control were recently theoretically discovered for radiative heat flow in near field, where large heat…
When two objects made of a material which supports surface modes are brought in close proximity to each other such that the vacuum gap between them is less than the thermal wavelength of radiation, then the coupling between the surface…
Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the…
In this work, we study the thermalization between two bodies separated by a vacuum gap by coupling the non-Fourier behavior of the materials with the radiative heat transfer in the near-field. Unlike the diffusion-type temperature profile,…
We model electrical conductivity in metastable amorphous $Ge_{2}Sb_{2}Te_{5}$ using independent contributions from temperature and electric field to simulate phase change memory devices and Ovonic threshold switches. 3D, 2D-rotational, and…
We consider state transfer between two qubits - effective two-level systems represented by Rydberg atoms - via a common mode of a microwave cavity at finite temperature. We find that when both qubits have the same coupling strength to the…
Electrical switching and rectifying properties of the metal-VO2-Si structures, on both p-type and n-type silicon, with vanadium dioxide films obtained by an acetylacetonate sol-gel method, are studied. The switching effect is shown to be…
When two solids are separated by a vacuum gap of thickness smaller than the wavelength of acoustic phonons, the latter can tunnel across the gap thanks to van der Waals forces or electrostatic interactions. Here we show that these…
With the continuous advancement of nanotechnology, nanodevices have become crucial components in computing, sensing and energy conversion applications. However, the structures of nanodevices typically possess sub-wavelength dimensions and…