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Nano-junctions, containing atomic-scale gold contacts between strongly disordered leads, exhibit different transport properties at room temperature and at low temperature. At room temperature, the nano-junctions exhibit conductance…
The study of electron motion in semiconductor billiards has elucidated our understanding of quantum interference and quantum chaos. The central assumption is that ionized donors generate only minor perturbations to the electron…
We develop theoretical methods to predict the effects of paramagnetic impurities on the microwave response of conventional spin-singlet superconductors. Our focus is on superconducting devices and resonators with low concentrations of…
Highly uniform quantum systems are essential for the practical implementation of scalable quantum processors. While quantum dot spin qubits based on semiconductor technology are a promising platform for large-scale quantum computing, their…
We demonstrate a hole double quantum dot in an undoped GaAs/AlGaAs heterostructure. The interdot coupling can be tuned over a wide range, from formation of a large single dot to two well-isolated quantum dots. Using charge sensing, we show…
Increasing the light scattering efficiency of nanostructured materials is becoming an active field of research both in fundamental science and commercial applications. In this context, the challenge is to use inexpensive organic materials…
We study the quantum corrections to the conductivity of the two-dimensional disordered interacting electron system in the diffusive regime due to inelastic scattering off rare magnetic impurities. We focus on the case of very different…
The power spectrum of finite-temperature quantum electromagnetic fluctuations produced by elementary charge carriers under the influence of external electric field is investigated. It is found that under the combined action of the photon…
The polarizability $\alpha$ determines the absorption, extinction and scattering by small particles. Beyond being purely set by scatterer size and material, in fact polarizability can be affected by backaction: the influence of the photonic…
Despite the concerted effort of several research groups, a detailed experimental account of defect dynamics in high-quality single- and few-layer transition metal dichalcogenides remain elusive. In this paper we report an experimental study…
We propose a theoretical model for the low-frequency noise observed in a quantum point contact (QPC) electrostatically defined in the 2D electron gas at a GaAs-AlGaAs interface. In such contacts electron scattering by soft impurity- or…
We report a new scanning nanomechanical noise microscopy platform enabling to both heat and acquire the fluctuations of mechanical nanostructures with nanometric resolution. We use this platform to image the thermally activated…
We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers…
Semiconductor quantum dots (QDs) are being regarded as the primary unit for a wide range of advanced and emerging technologies including electronics, optoelectronics, photovoltaics and biosensing applications as well as the domain of q-bits…
Tuning of the electronic properties of pre-synthesized colloidal semiconductor nanocrystals (NCs) by doping plays a key role in the prospect of implementing them in printed electronics devices such as transistors, and photodetectors. While…
The discrepancies between reality and simulation impede the optimisation and scalability of solid-state quantum devices. Disorder induced by the unpredictable distribution of material defects is one of the major contributions to the reality…
Recently created self-bound quantum droplets of binary Bose mixtures open intriguing possibilities for the study of impurity physics. We show that the properties of impurities embedded in quasi-one-dimensional droplets are determined by the…
High temperature cuprate superconductors exhibit extremely local nanoscale phenomena and strong sensitivity to doping. While other experiments have looked at nanoscale interfaces between layers of different dopings, we focus on the…
The short coherence lengths characteristic of low-dimensional superconductors are associated with usefully high critical fields or temperatures. Unfortunately, such materials are often sensitive to disorder and suffer from phase…
The electronic properties and nanostructure of InAs nanowires are correlated by creating multiple field effect transistors (FETs) on nanowires grown to have low and high defect density segments. 4.2 K carrier mobilities are ~4X larger in…