Related papers: Charge noise, spin-orbit coupling, and coherence o…
We demonstrate a substantial improvement in the spin-exchange gate using symmetric control instead of conventional detuning in GaAs spin qubits, up to a factor-of-six increase in the quality factor of the gate. For symmetric operation,…
Strong correlation effects in a capacitively coupled double quantum-dot setup were previously shown to provide the possibility of both entangling spin-charge degrees of freedom and realizing efficient spin-filtering operations by static…
In this report, we examine the decoherence of a spin qubits system coupled to counted spin chain with a $1/r^2$ interaction by using influence functional. We also examine the time evolution of density matrix numerically when environment is…
Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T2* ranges from 127ps to ~2.1ns; it…
Charge noise is a major obstacle to improved gate fidelities in silicon spin qubits. Numerous methods exist to mitigate charge noise, including improving device fabrication, dynamical decoupling, and real-time parameter estimation. In this…
The nuclear spin of a phosphorus atom in silicon has been used as a quantum bit in various quantum-information experiments. It has been proposed that this nuclear-spin qubit can be efficiently controlled by an ac electric field, when…
We consider pure dephasing of Bell states of electron spin qubits interacting with a sparse bath of nuclear spins. Using the newly developed two-qubit generalization of cluster correlation expansion method, we calculate the spin echo decay…
We describe the effect of geometric phases induced by either classical or quantum electric fields acting on single electron spins in quantum dots in the presence of spin-orbit coupling. On one hand, applied electric fields can be used to…
Spin qubits based on Si and Si$_{1-x}$Ge$_{x}$ quantum dot architectures exhibit among the best coherence times of competing quantum computing technologies, yet they still suffer from charge noise that limit their qubit gate fidelities.…
Spin-orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-chip, nanofabricated micromagnets or nearby coplanar…
Charge qubits formed in double quantum dots represent quintessential two-level systems that enjoy both ease of control and efficient readout. Unfortunately, charge noise can cause rapid decoherence, with typical single-qubit gate fidelities…
We consider the dephasing of an one-electron state in a quantum dot due to charge fluctuations in a biased quantum point contact coupled to the dot capacitively. The contribution to the dephasing rate due to the bias depends on temperature…
We detect correlations in qubit-energy fluctuations of non-neighboring qubits defined in isotopically purified Si/SiGe quantum dots. At low frequencies (where the noise is strongest), the correlation coefficient reaches 10% for a…
We review recent advances on the theory of spin qubits in nanostructures. We focus on four selected topics. First, we show how to form spin qubits in the new and promising material graphene. Afterwards, we discuss spin relaxation and…
High fidelity entanglement of an on-chip array of spin qubits poses many challenges. Spin-orbit coupling (SOC) can ease some of these challenges by enabling long-ranged entanglement via electric dipole-dipole interactions, microwave…
Quantum computing promises significant speed-up for certain types of computational problems. However, robust implementations of semiconducting qubits must overcome the effects of charge noise that currently limit coherence during gate…
We study the dynamics of a pulse-gated semiconductor double quantum dot qubit. In our experiments, the qubit coherence times are relatively long, but the visibility of the quantum oscillations is low. We show that these observations are…
We investigate low-frequency noise in a spin-qubit device made in isotopically purified Si/Si-Ge. Observing sizable cross-correlations among energy fluctuations of different qubits, we conclude that these fluctuations are dominated by…
Characterizing and understanding the environment affecting quantum systems is critical to elucidate its physical properties and engineer better quantum devices. We develop an approach to reduce the quantum environment causing single-qubit…
In many quantum computer architectures, the qubits are in close proximity to metallic device elements. The fluctuating currents in the metal give rise to noisy electromagnetic fields that leak out into the surrounding region. These fields…