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We study the electronic structures and topological properties of $(M+N)$-layer twisted graphene systems. We consider the generic situation that $N$-layer graphene is placed on top of the other $M$-layer graphene, and is twisted with respect…
Hole-conjugate states of the fractional quantum Hall effect host counter-propagating edge channels which are thought to exchange charge and energy. These exchanges have been the subject of extensive theoretical and experimental works; in…
Consequences of an exceedingly strong electric field (E field) on the ground state energetics and transport properties of a 2D spinless electron gas in a perpendicular magnetic field (a Quantum Hall Effect (QHE) configuration) are…
We report on electronic properties of graphene synthesized by chemical vapor deposition (CVD) on copper then transferred to SiO2/Si. Wafer-scale (up to 4 inches) graphene films have been synthesized, consisting dominantly of monolayer…
The edge states of the quantum Hall and fractional quantum Hall effect of a two-dimensional electron gas provide key access to the excitations of the bulk. Here we demonstrate controlled transmission of edge states in bilayer graphene.…
Recently, an exotic quantum Hall ferromagnet with spin-filtered helical edge modes was observed in monolayer graphene on a high-dielectric constant substrate at moderate magnetic fields, withstanding temperatures of up to 110 Kelvin [L.…
A recently developed formula for the Hall coefficient [A. Auerbach, Phys. Rev. Lett. 121, 66601 (2018)] is applied to nodal line and Weyl semimetals (including graphene), and to spin-orbit split semiconductor bands in two and three…
Fractional Quantum Hall effect (FQHE) is a unique many-body phenomenon, which was discovered in a two-dimensional electron system placed in a strong perpendicular magnetic field. It is entirely due to the electron-electron interactions…
We have measured the quantum Hall effect in monolayer graphene samples that were exposed to a cold hydrogen plasma leading to a hydrogenation level of a few percent. Compared to pristine graphene, the Landau level distance significantly…
Mechanical deformations of graphene induce a term in the Dirac Hamiltonian which is reminiscent of an electromagnetic vector potential. Strain gradients along particular lattice directions induce local pseudomagnetic fields and substantial…
The realization of fractional Chern insulators in moir\'e materials has sparked the search for further novel phases of matter in this platform. In particular, recent works have demonstrated the possibility of realizing quantum anomalous…
The presence of strong disorder in graphene nanoribbons yields low-mobility diffusive transport at high charge densities, whereas a transport gap occurs at low densities. Here, we investigate the longitudinal and transverse…
The fractional quantum Hall effect (FQHE) of topological surface-state particles under a tilted strong magnetic field is theoretically studied by using the exact diagonalization method. The Haldane's pseudopotentials for the Coulomb…
Starting from the graphene lattice tight-binding Hamiltonian with an on-site U and long-range Coulomb repulsion, we derive an interacting continuum Dirac theory governing the low-energy behavior of graphene in an applied magnetic field.…
The fractional quantum Hall effect (FQHE) is extensively studied, but the explanation for Hall plateau widths and excitation energy gaps remains elusive. We study the effective theory of FQHE built upon experimental inputs of Hall current…
The planar Hall effect in 3D systems is an effective probe for their Berry curvature, topology, and electronic properties. However, the Berry curvature-induced conventional planar Hall effect is forbidden in 2D systems as the out-of-plane…
Recent experiments on rhombohedral pentalayer graphene flakes with a substrate induced moir\'e potential have identified both Chern insulators and fractional Quantum Hall states in the absence of an applied magnetic field. Surprisingly,…
Quantum anomalous Hall effect (QAH) is induced by substitution of a certain portion, x, of Bi atoms in a BiTe-based insulating parent compound by magnetic ions (Cr or V). We find the density of in-gap states, N(E), emerging as a result of…
An intriguing observation on the quantum anomalous Hall effect (QAHE) in magnetic topological insulators (MTIs) is the dissipative edge states, where quantized Hall resistance is accompanied by nonzero longitudinal resistance. We…
We show evidence of the backscattering of quantum Hall edge channels in a narrow graphene Hall bar, induced by the gating effect of the conducting tip of a Scanning Gate Microscope, which we can position with nanometer precision. We show…