Related papers: Conductance behavior in nanowires with spin-orbit …
We consider a gated one-dimensional (1D) quantum wire disturbed in a contactless manner by an alternating electric field produced by a tip of a scanning probe microscope. In this schematic 1D electrons are driven not by a pulling electric…
Low dimensional semiconducting structures with strong spin-orbit interaction (SOI) and induced superconductivity attracted much interest in the search for topological superconductors. Both the strong SOI and hard superconducting gap are…
A semiconductor nanowire quantum dot with strong spin-orbit coupling (SOC) can be used to achieve a spin-orbit qubit. In contrast to a spin qubit, the spin-orbit qubit can respond to an external ac electric field, an effect called…
One-dimensional quantum wires are considered as prospective elements for spin transport and manipulation in spintronics. We study spin dynamics in semiconductor GaAs-like nanowires with disorder and spin-orbit interaction by using a…
We investigate the non-equilibrium transport properties of a disordered molecular nanowire. The nanowire is regarded as a quasi-one-dimensional organic crystal composed of self-assembled molecules. One orbital and a single random energy are…
An approach is developed for the determination of the current flowing through a nanosize silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFET). The quantum mechanical features of the electron transport are…
Motion of electrons can influence their spins through a fundamental effect called spin-orbit interaction. This interaction provides a way to electrically control spins and as such lies at the foundation of spintronics. Even at the level of…
The spin-resolved non-equilibrium real-time electron transport through a double-quantum-dot (DQD) Aharonov-Bohm (AB) interferometer with spin-orbit interaction (SOI) is explored. The SOI and AB interference in the real-time dynamics of spin…
We propose a model to explore the dynamics of spin-systems coupled by exchange interaction to the conduction band electrons of a semiconductor material that forms the channel in a ferromagnet/semiconductor/ferromagnet spin-valve structure.…
Structural disorder is present in almost all experimental measurements of electronic transport through single molecules or molecular wires. To assess its influence on the conductance is computationally demanding, because a large number of…
We develop a theory of spin noise in semiconductor nanowires considered as prospective elements for spintronics. In these structures spin-orbit coupling can be realized as a random function of coordinate correlated on the spatial scale of…
Spin-orbit coupling (SOC) is pivotal for various fundamental spin-dependent phenomena in solids and their technological applications. In semiconductors, these phenomena have been so far studied in relatively weak electron-electron…
Transport through a one--dimensional wire of interacting electrons connected to semi--infinite leads is investigated using a bosonization approach. An incident electron is transmitted as a sequence of partial charges. The dc conductance is…
We study contact effects on electron transport across a molecular wire sandwiched between two semi-infinite (carbon) nanotube leads as a model for nanoelectrodes. Employing the Landauer scattering matrix approach we find that the…
The conductance of one-dimensional nano-wires of interacting electrons connected to non-interacting leads is calculated in the linear response regime. Two different approaches are used: a many-body Green function technique and a relation to…
The spin orbit interactions (SOI) of light mediated by single scattering from plasmon resonant metal nanoparticles (nanorods and nanospheres) are investigated using explicit theory based on Jones and Stokes-Mueller polarimetry formalism.…
We study the implications of spin-orbit interaction (SOI) for two-qubit gates (TQGs) in semiconductor spin qubit platforms. SOI renders the exchange interaction governing qubit pairs anisotropic, posing a serious challenge for conventional…
We present a plane wave/pseudopotential implementation of the method to calculate electron transport properties of nanostructures. The conductance is calculated via the Landauer formula within formalism of Green's functions. Nonorthogonal…
We calculate the resistance and mean free path in long metallic and semiconducting silicon nanowires (SiNWs) using two different numerical approaches: A real space Kubo method and a recursive Green's function method. We compare the two…
Rashba-type spin-orbit interaction (SOI) controlled band structure of a two-dimensional superlattice allows for the modulation of the conductance of finite size devices by changing the strength of the SOI. We consider rectangular arrays and…