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Heterostructures made from van der Waals materials provide a template to investigate proximity effects at atomically sharp heterointerfaces. In particular, near-field charge and energy transfer in heterostructures made from semiconducting…

Black phosphorus (BP) has recently emerged as a promising narrow band gap layered semiconductor with optoelectronic properties that bridge the gap between semi-metallic graphene and wide band gap transition metal dichalcogenides such as…

Recent reports on the fabrication of phosphorene, i.e., mono- or few-layer black phosphorus, have raised exciting prospects of an outstanding two-dimensional (2D) material that exhibits excellent properties for nanodevice applications. Here…

Materials Science · Physics 2014-06-11 Liangzhi Kou , Thomas Frauenheim , Changfeng Chen

A single photodetector with tunable detection wavelengths and polarization sensitivity can potentially be harnessed for diverse optical applications ranging from imaging and sensing to telecommunications. Such a device will require the…

Two-dimensional (2D) atomic crystals, such as graphene and atomically thin transition metal dichalcogenides (TMDCs), are currently receiving a lot of attention. They are crystalline, and thus of high material quality, even so, they can be…

Mesoscale and Nanoscale Physics · Physics 2014-03-11 Andreas Pospischil , Marco M. Furchi , Thomas Mueller

Scalable fabrication of high quality photodetectors derived from synthetically grown monolayer transition metal dichalcogenides is highly desired and important for wide range of nanophotonics applications. We present here scalable…

Applied Physics · Physics 2017-10-03 Alexander E. Yore , K. K. H. Smithe , Sauraj Jha , Kyle Ray , Eric Pop , A. K. M. Newaz

Intensive efforts have been devoted to exploit novel optoelectronic devices based on two-dimensional (2D) transition-metal dichalcogenides (TMDCs) owing to their strong light-matter interaction and distinctive material properties. In…

Mesoscale and Nanoscale Physics · Physics 2020-02-26 Nikolaus Flöry , Ping Ma , Yannick Salamin , Alexandros Emboras , Takashi Taniguchi , Kenji Watanabe , Juerg Leuthold , Lukas Novotny

The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N = 1, 2, ... 6 S-Mo-S monolayers have been investigated by optical spectroscopy. Through characterization by absorption, photoluminescence, and…

Materials Science · Physics 2015-05-18 Kin Fai Mak , Changgu Lee , James Hone , Jie Shan , Tony F. Heinz

Searching for materials with single atom-thin as well as planar structure, like graphene and borophene, is one of the most attractive themes in two dimensional materials. Herein, using density functional theory calculations, we have…

Materials Science · Physics 2024-09-17 Jun-Hui Yuan , Biao Zhang , Ya-Qian Song , Jia-Fu Wang , Kan-Hao Xue , Xiang-Shui Miao

Vertical $pn$ heterojunction diodes were prepared by plasma-assisted molecular beam epitaxy of unintentionally-doped $p$-type SnO layers with hole concentrations ranging from $p=10^{18}$ to $10^{19}$cm$^{-3}$ on unintentionally-doped…

Ultrathin black phosphorus, or phosphorene, is the second known elementary two-dimensional material that can be exfoliated from a bulk van der Waals crystal. Unlike graphene it is a semiconductor with a sizeable band gap and its excellent…

The new generation of two-dimensional (2D) materials has shown a broad range of applications for optical and electronic devices. Understanding the properties of these materials when integrated with the more traditional three-dimensional…

Integrating two-dimensional (2D) crystals into optical fibers can grant them optoelectronic properties and extend their range of applications. However, our ability to produce complicated structures is limited by the challenges of chemical…

Applied Physics · Physics 2018-07-03 Yi-feng Xiong , Jin-hui Chen , Fei Xu

The metal contacts on 2D black phosphorus field-effect transistor and photodetectors are studied. The metal work functions can significantly impact the Schottky barrier at the metal-semiconductor contact in black phosphorus devices. Higher…

Materials Science · Physics 2015-03-26 Yexin Deng , Nathan J. Conrad , Zhe Luo , Han Liu , Xianfan Xu , Peide D. Ye

Van der Waals (vdW) heterostructures made of two-dimensional materials have been demonstrated to be versatile architectures for optoelectronic applications due to strong light-matter interactions. However, most of light-controlled phenomena…

Mesoscale and Nanoscale Physics · Physics 2018-08-21 Yu Wang , Erfu Liu , Anyuan Gao , Tianjun Cao , Mingsheng Long , Chen Pan , Lili Zhang , Junwen Zeng , Chenyu Wang , Weida Hu , Shi-Jun Liang , Feng Miao

As basic building blocks for next-generation information technologies devices, high-quality p-n junctions based on van der Waals (vdW) materials have attracted widespread interest.Compared to traditional two dimensional (2D) heterojunction…

Mesoscale and Nanoscale Physics · Physics 2023-05-12 Huanfeng Zhu , Jialin Li , Qiang Chen , Wei Tang , Xinyi Fan , Fan Li , Linjun Li

Monolayer two-dimensional transitional metal dichalcogenides, such as MoS2, WS2 and WSe2, are direct band gap semiconductors with large exciton binding energy. They attract growing attentions for opto-electronic applications including solar…

Mesoscale and Nanoscale Physics · Physics 2017-10-05 Shoujun Zheng , Jinkyu So , Fucai Liu , Zheng Liu , Nikolay Zheludev , Hong Jin Fan

Two-dimensional transition metal dichalcogenides (TMDs) are highly appealing for gas sensors, lab-on-a-chip devices and bio-sensing applications because of their strong light-matter interaction and high surface-to-volume ratio. The ability…

Van der Waals (vdW) heterostructures constructed with two-dimensional (2D) materials have attracted great interests, due to their fascinating properties and potential for novel applications. While earlier efforts have advanced the…

Mesoscale and Nanoscale Physics · Physics 2018-11-13 Zhonghui Nie , Yuhan Wang , Ziling Li , Yue Sun , Xiaoping Liu , Edmond Turcu , Yi Shi , Rong Zhang , Yu Ye , Yongbing Xu , Fengqiu Wang

We have fabricated a device which includes two lateral p-n junctions on an n-type GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure. A section of the n-type material has been converted to p-type by removing dopants and applying a voltage to a…

Applied Physics · Physics 2024-08-19 C. P. Dobney , A. Nasir , P. See , C. J. B. Ford , J. P. Griffiths , C. Chen , D. A. Ritchie , M. Kataoka