Related papers: Temperature dependence of spin-orbit torque effect…
Current induced spin-orbit effective magnetic fields in metal/ferromagnet/oxide trilayers provide a new way to manipulate the magnetization, which is an alternative to the conventional current induced spin transfer torque arising from…
We have studied the underlayer thickness and temperature dependences of the current induced effective field in CoFeB|MgO heterostructures with Ta based underlayers. The underlayer thickness at which the effective field saturates is found to…
We employ the dynamical mean field approximation to perform a systematic study of magnetism in Ga_{1-x}Mn_xAs. Our model incorporates the effects of the strong spin-orbit coupling on the J=3/2 GaAs valence bands and of the exchange…
Using the Matsubara Green function formalism we calculate the temperature dependence of spin Hall and spin Nernst conductivities of a two-dimensional electron gas with Rashba spin-orbit interaction in the linear response regime. In the case…
Electrical current manipulation of magnetization switching through spin-orbital coupling in ferromagnetic semiconductor (Ga,Mn)As Hall bar devices has been investigated. The efficiency of the current-controlled magnetization switching is…
We measure the temperature, magnetic-field, and current dependence for the switching of nanomagnets by a spin-polarized current. Depending on current bias, switching can occur between either two static magnetic states or a static state and…
The magnetic properties of the diluted magnetic semiconductor Ga_{1-x}Mn_{x}As are studied within the dynamical cluster approximation. We use the k-dot-p Hamiltonian to describe the electronic structure of GaAs with spin-orbit coupling and…
We formulate a theory of doped magnetic semiconductors such as Ga$_{1-x}$Mn$_x$As which have attracted recent attention for their possible use in spintronic applications. We solve the theory in the dynamical mean field approximation to find…
Magnetic properties of the 1D mixed spin-1/2 and spin-S (S >1/2) transverse Ising model in the presence of an external longitudinal magnetic field are calculated exactly by the use of the generalised decoration-iteration mapping…
We have studied the magnetic-field and concentration dependences of the magnetizations of the hole and Mn subsystems in diluted ferromagnetic semiconductor Ga_{1-x}Mn_xAs. A mean-field approximation to the hole-mediated interaction is used,…
Non-thermal laser induced spin excitations, recently discovered in conventional oxide and metal ferromagnets, open unprecedented opportunities for research and applications of ultrafast optical manipulation of magnetic systems.…
We propose a new type of the spin Seebeck effect (SSE) emerging from the Rashba spin-orbit coupling in asymmetric four-terminal electron systems. This system generates spin currents or spin voltages along the longitudinal direction parallel…
We have investigated the effect of the gate voltage on spin relaxation in an Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As heterostructure. The study is motivated by a recent proposal for a non-ballistic spin field effect transistor that utilizes the…
The magnetic properties of the diluted magnetic semiconductors (DMS) (Ga, Mn)As and (Ga, Mn)N are investigated by means of an effective Heisenberg model, whose exchange parameters are obtained from first-principle calculations. The…
The electrical and thermo-electrical transport effects of the TaAs$_2$ semimetal were measured in a magnetic field applied along [-2 0 1] direction. The resulting field dependences of the resistivity as well as the Hall, Seebeck and Nernst…
In order to study the dependence of the coercive force of sintered magnets on temperature, nucleation and domain wall propagation at the grain boundary are studied as rate-determining processes of the magnetization reversal phenomena in…
We present a comprehensive study of the current-induced spin-orbit torques in perpendicularly magnetized Ta/CoFeB/MgO layers. The samples were annealed in steps up to 300 degrees C and characterized using x-ray absorption spectroscopy,…
We have developed a self-aligned, high-yield process to fabricate CPP (current perpendicular to the plane) magnetic sensors of sub 100 nm dimensions. A pinned synthetic antiferromagnet (SAF) is used as the reference layer which minimizes…
We calculate magnetization in magnetically doped semiconductors assuming a local exchange model of carrier-mediated ferromagnetic mechanism and using a number of complementary theoretical approaches. In general, we find that the results of…
Using the spin-polarized tunneling model and taking into account the basic physics of ferromagnetic semiconductors, we study the temperature dependence of the tunneling magnetoresistance (TMR) in the diluted magnetic semiconductor (DMS)…