Related papers: Strain effect and intermixing at the Si surface: A…
Although the clean Si(001) and Ge(001) surfaces are very similar, experiments to date have shown that dimer-vacancy (DV) defects self-organize into vacancy lines (VLs) on Si(001), but not on Ge(001). In this paper, we perform…
The method of software analysis of high-resolution TEM images using the peak pairs algorithm in combination with Raman spectroscopy was employed to study lattice deformations in Ge/Si(001) structures with low-temperature Ge quantum dots. It…
In core/shell quantum dots (QDs), the interface between semiconductors of different chemical character largely determines their optoelectronic properties. In III-V/II-VI systems, this boundary involves pronounced chemical and electronic…
The influence of the collimating conditions of the incident beam on diffraction patterns produced by grazing scattering of fast atoms off crystal surfaces is studied within a semi-quantum approach, named Surface Initial Value Representation…
The interaction of Mn with Ge quantum dots (QD), which are bounded by {105} facets, and the strained Ge wetting layer (WL), terminated by a (001) surface, is investigated with scanning tunneling microscopy (STM). Mn is deposited on the Ge…
In this work, we have theoretically investigated the intermixing effect in highly strained In$_{0.3}$Ga$_{0.7}$As/GaAs quantum well (QW) taking into consideration the composition profile change resulting from in-situ indium surface…
Diffraction patterns produced by fast He atoms grazingly impinging on a LiF(001) surface are investigated focusing on the influence of the beam collimation. Single- and double- slit collimating devices situated in front of the beam source…
We theoretically address grazing incidence fast atom diffraction (GIFAD) for H atoms impinging on a LiF(001) surface. Our model combines a description of the H-LiF(001) interaction obtained from Density Functional Theory calculations with a…
Relaxed atomic geometries and chemisorption energies have been calculated for the dissociative adsorption of molecular hydrogen on vicinal Si(001) surfaces. We employ density-functional theory, together with a pseudopotential for Si, and…
This article offers a new perspective for the mechanics of solids using moving Cartan's frame, specifically discussing a mixed variational principle in non-linear elasticity. We treat quantities defined on the co-tangent bundles of…
Silicon dangling bonds (DBs) on an adsorbate-covered Si(100) surface can be created in a scanning tunneling microscope (STM) with high precision required for a number of applications. However, vacancies containing DBs can diffuse,…
SiGe heteroepitaxial growth yields pristine host material for quantum dot qubits, but residual interface disorder can lead to qubit-to-qubit variability that might pose an obstacle to reliable SiGe-based quantum computing. We demonstrate a…
Si dangling bonds without H termination at the interface of quasi-free standing monolayer graphene (QFMLG) are known scattering centers that can severely affect carrier mobility. In this report, we study the atomic and electronic structure…
Spin qubits have attracted tremendous attention in the effort of building quantum computers over the years. Natural atomic scale candidates are group-V dopants in silicon, not only showing ultra-long lifetimes but also being compatible with…
In this paper we have shown that squeezed modified quantum vacua have an effect on the background geometry by solving the semi-classical Einstein Field Equations in modified vacuum. The resultant geometry is similar to (anti) de Sitter…
We calculate properties like equilibrium lattice parameter, bulk modulus and monovacancy formation energy for nickel (Ni), iron (Fe) and chromium (Cr) using Kohn-Sham density functional theory (DFT). We compare relative performance of local…
A free surface of a dilute $^3$He-$^4$He liquid mixture is a unique system where two Fermi liquids with distinct dimensions coexist: a three-dimensional (3D) $^3$He Fermi liquid in bulk and a two-dimensional (2D) $^3$He Fermi liquid at the…
We study mass-imbalanced two-component Fermi mixtures, where one of the components consists of dipolar fermions. We specifically study the mass imbalances corresponding to the atomic ${}^{163}$Dy-${}^{40}$K and ${}^{53}$Cr-${}^{6}$Li…
Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting…
Dimer vacancy (DV) defect complexes in the Si(001)2x1 surface were investigated using high-resolution scanning tunneling microscopy and first principles calculations. We find that under low bias filled-state tunneling conditions, isolated…