Related papers: Phase separation in doped Mott insulators
Despite many efforts to rationalize the strongly correlated electronic ground states in doped Mott insulators, the nature of the doping induced insulator to metal transition is still a subject under intensive investigation. Here we probe…
Describing the doped Fullerenes using a generalized Hubbard model, we study the Mott transition for different integer fillings of the t_1u band. We use the opening of the energy-gap E_g as a criterion for the transition. E_g is calculated…
Experiments on layered materials call for a study of the influence of short-range spin correlations on the Mott transition. To this end, we solve the cluster dynamical mean-field equations for the Hubbard model on a plaquette with…
We report modulation of a reversible phase transition in VO2 films by hydrogen doping. A metallic phase and a new insulating phase are successively observed at room temperature as the doping concentration increases. It is suggested that the…
This article reviews the effort to understand the physics of high temperature superconductors from the point of view of doping a Mott insulator. The basic electronic structure of the cuprates is reviewed, emphasizing the physics of strong…
We discuss Mott insulating and metallic phases of a model with $e_g$ orbital degeneracy to understand physics of Mn perovskite compounds. Quantum Monte Carlo and Lanczos diagonalization results are discussed in this model. To reproduce…
Layered doped Mott insulators, such as the cuprates, show unusual temperature dependence of the resistivity. Intriguingly, the resistivity perpendicular to the CuO$_2$ planes, $\rho_c(T)$, shows both metallic ($d\rho_c/dT > 0$) and…
Two recent experiments from Cornell and Columbia have reported insulator-to-metal transitions in two-dimensional (2D) moir\'e transition metal dichalcogenides (mTMD) induced by doping around half-filling, where the system is a Mott…
Substituting magnetic ions with nonmagnetic ions is a new way to study dilution. Using determinant quantum Monte Carlo calculations, we investigate an interacting Dirac fermion model with the on-site Coulomb repulsion being randomly zero on…
I review some of the results on the Mott transition in one dimensional systems. In particular I discuss the phase diagram and critical properties of both Mott transitions at fixed filling and upon doping, as well as the dc and ac…
Quantum transitions between the Mott insulator and metals by controlling filling in two-dimensional square lattice are characterized by a large dynamical exponent $z=4$ where the origin of unusual metallic properties near the Mott insulator…
Phase separation in the Hubbard model is investigated with the dynamical cluster approximation. We find that it is present in the paramagnetic solution for values of filling smaller than one and at finite temperature when a positive…
The paramagnetic phase of the one-band Hubbard model is studied at zero-temperature, within the framework of dynamical mean-field theory, and for general particle-hole asymmetry where a doping-induced Mott transition occurs. Our primary…
Electrons in correlated insulators are prevented from conducting by Coulomb repulsion between them. When an insulator-to-metal transition is induced in a correlated insulator by doping or heating, the resulting conducting state can be…
The Mott transistor is a paradigm for a new class of electronic devices---often referred to by the term Mottronics---, which are based on charge correlations between the electrons. Since correlation-induced insulating phases of most oxide…
Phase separation and a tendency to form inhomogeneous structures seems to be a generic property of systems with strongly correlated electrons. After shortly summarising the existing theoretical results in this direction, I concentrate on…
High-temperature superconductors at zero doping can be considered strongly correlated two-dimensional Mott insulators. The understanding of the connection between the superconductor and the Mott insulator hits at the heart of the…
We study the doping driven Mott metal-insulator transition (MIT) in the periodic Anderson model set in the Mott-Hubbard regime. A striking asymmetry for electron or hole driven transitions is found. The electron doped MIT at larger U is…
This work explores the unique character of strongly correlated systems, specifically Mott-insulators, in the context of battery electrode materials. The study investigates the correlation between the proposed chemical potential evolution…
The density driven Mott transition is studied by means of Dynamical Mean-Field Theory in the Hubbard-Holstein model, where the Hubbard term leading to the Mott transition is supplemented by an electron-phonon (e-ph) term. We show that an…