Related papers: Spin-torque diode radio-frequency detector with vo…
Unusual behavior of quantum materials commonly arises from their effective low-dimensional physics, which reflects the underlying anisotropy in the spin and charge degrees of freedom. Torque magnetometry is a highly sensitive technique to…
We study the excitation of spin waves in magnetic insulators by the current-induced spin-transfer torque. We predict preferential excitation of surface spin waves induced by an easy-axis surface anisotropy with critical current inversely…
Efficient manipulation of spin waves (SWs) is considered as one of the promising means for encoding information with low power consumption in next generation spintronic devices. The SW Doppler shift is one important phenomenon by…
Magnetic tunnel junctions (MTJs) have attracted strong research interest within the last decades due to their potential use as nonvolatile memory such as MRAM as well as for magnetic logic applications. Half-metallic magnets (HMMs) have…
Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memory computing, and logic applications. However, the…
We investigate the direction-dependent switching current in a flux-tunable four-terminal Josephson junction defined in an InAs/Al two-dimensional heterostructure. The device exhibits the Josephson diode effect, with switching currents that…
In this article we analyze by modeling two possible mechanisms for magnetization switching using spin orbit torques, which have been reported to cause field-free deterministic switching in experiments. Here we compare the field-free…
We use a ferromagnetic voltage probe model to study the influence of inelastic scattering on giant magnetoresistance and current-induced torques in ferromagnetic and antiferromagnetic metal spin valves. The model is based on the Green's…
Measurements of magnetic torque are most commonly preformed about a single axis or component of torque. Such measurements are very useful for hysteresis measurements of thin film structures in particular, where high shape anisotropy yields…
A pure spin current generated within a nonlocal spin valve can exert a spin transfer torque on a nanomagnet. This nonlocal torque enables new design schemes for magnetic memory devices that do not require the application of large voltages…
Magnetic anisotropy encodes key information about the free-energy landscape of magnetic materials, but its quantitative characterization often requires probes beyond conventional magnetometry. A quartz tuning-fork resonator provides direct…
The development of compact and highly sensitive microwave detectors compatible with complementary-metal-oxide-semiconductor (CMOS) processes is an active research area but remains a major challenge in microwave technology. Spin-torque…
We report on large modifications of current-induced spin-orbit torques in a gated Pt/Co/Gd-oxide microstrip due to voltage-driven O$^{2-}$ migration. The Slonczewski-like and field-like torques are quantified using a low-frequency harmonic…
Writing magnetic bits by spin-orbit torques (SOTs) arising from spin Hall effect creates new possibilities for ultrafast and low-power magnetoresistive random access memory (MRAM). For perpendicular MRAM, an extra in-plane field is required…
Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular…
In this work we report observation of in-plane current induced out-of-plane magnetic field driven torque in spin valve structure. Since ferromagnet has high spin orbit coupling it is expected to be the source of spin-orbit-torque as it…
Magnetic tunnel junctions (MTJs) have been widely applied in spintronic devices for efficient spin detection through the imbalance of spin polarization at the Fermi level. The van der Waals (vdW) nature of two-dimensional (2D) magnets with…
We report the observation of tunneling anisotropic magnetoresistance (TAMR) in an organic spin-valve-like structure with only one ferromagnetic electrode. The device is based on a new high mobility perylene diimide-based n-type organic…
Magnetic skyrmions are topologically protected states that are very promising for the design of the next generation of ultralow-power electronic devices. In this letter, we propose a magnetic tunnel junction based spin-transfer torque diode…
We fabricate fully epitaxial Fe/ZnO/MgO/Fe magnetic tunnel junctions (MTJs) with a bilayer tunnel barrier, in which ZnO has a metastable rock-salt crystal structure. We observe a high magnetoresistance ratio up to 96% at room temperature…