Related papers: Suspending Effect on Low-Frequency Charge Noise in…
This work analyzes carrier transport, the relaxation of non-equilibrium charge, and the electronic structure of fluorinated graphene (FG) films with graphene quantum dots (GQDs). The FG films with GQDs were fabricated by means of chemical…
Electrostatic gating lies in the heart of modern FET-based integrated circuits. Usually, the gate electrode has to be placed very close to the conduction channel, typically a few nanometers, in order to achieve efficient tunability.…
Silicon quantum dot qubits show great promise but suffer from charge noise with a 1/f^\alpha spectrum, where f is frequency and \alpha \lesssim 1. It has recently been proposed that 1/f^\alpha noise spectra can emerge from a few thermally…
With a large portfolio of elemental quantum components, superconducting quantum circuits have contributed to dramatic advances in microwave quantum optics. Of these elements, quantum-limited parametric amplifiers have proven to be essential…
A general method for directly measuring the low-frequency flux noise (below 10 Hz) in compound Josephson junction superconducting flux qubits has been used to study a series of 85 devices of varying design. The variation in flux noise…
We have studied the transport properties of a large graphene double quantum dot under the influence of background disorder potential and magnetic field. At low temperatures, the evolution of the charge-stability diagram as a function of…
We report on the influence of low gamma irradiation (10^4 Gy) on the noise properties of individual carbon nanotube (CNT) field-effect transistors (FETs) with different gate configurations and two different dielectric layers, SiO2 and…
The bias-dependence of input referred low-frequency noise (LFN), SVG, is a considerable facet for RF circuit design. SVG was considered constant in silicon transistors but this was contradicted by recent experimental and theoretical…
We consider charge quantization in a small superconducting grain that is contacted by a normal-metal electrode and is controlled by a capacitively coupled gate. At zero temperature and zero conductance $G$ between the grain and the…
Quantum dots connected to larger systems containing a continuum of states like charge reservoirs allow the theoretical study of many-body effects such as the Coulomb blockade and the Kondo effect. Here, we analyze the nonequilibrium Kondo…
Low frequency resistance variations due to mobility fluctuations is one of the key factors of $1/f$ noise in metallic conductors. According to theory, such noise in a two-dimensional (2D) device can be suppressed to zero at small magnetic…
We present transport measurements on a strongly coupled graphene quantum dot in a perpendicular magnetic field. The device consists of an etched single-layer graphene flake with two narrow constrictions separating a 140 nm diameter island…
Flicker or 1/f noise in metal-oxide-semiconductor field-effect transistors (MOSFETs) has been identified as the main source of noise at low frequency. It often originates from an ensemble of a huge number of charges trapping and detrapping.…
We analyze charging effects in graphene quantum dots. Using a simple model, we show that, when the Fermi level is far from the neutrality point, charging effects lead to a shift in the electrostatic potential and the dot shows standard…
The edge states which were observed on a linear edge of graphene may also persist on a curved edge. We calculate the elastic transport scattering cross section on a graphene nanohole supporting the edge states. Resonant peaks in the gate…
The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene-metal interface or the contact noise, on the performance of graphene field effect transistors, can be as adverse as the contact resistance…
Distribution of charge induced by a gate voltage in a graphene strip is investigated. We calculate analytically the charge profile and demonstrate a strong(macroscopic) charge accumulation along the boundaries of a micrometers-wide strip.…
We report the observation of the quantized Hall effect in suspended graphene probed with a two-terminal lead geometry. The failure of earlier Hall-bar measurements is discussed and attributed to the placement of voltage probes in mesoscopic…
Using scanning tunneling microscopy, we have imaged local charge density fluctuations in monolayer graphene. By placing a small gold nanoparticle on the end of the STM tip, a charge sensor is created. By raster scanning the tip over the…
We present a general route to reduce inhomogeneous broadening in nanodevices due to 1/f noise. We apply this method to a universal two-qubit gate and demonstrate that for selected optimal couplings, a high-efficient gate can be implemented…